RENESAS 2SJ540

2SJ540
Silicon P Channel MOS FET
REJ03G0887-0400
Rev.4.00
Jun 05, 2006
Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 0.11 Ω typ.
• Low drive current
• 4 V gate drive devices
• High speed switching
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
Rev.4.00 Jun 05, 2006 page 1 of 7
2
3
S
2SJ540
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
Value
–60
±20
–12
–48
–12
–12
12
50
150
–55 to +150
ID (pulse) Note 1
IDR
IAP Note 3
EAR Note 3
Pch Note 2
Tch
Tstg
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Note:
4. Pulse test
Rev.4.00 Jun 05, 2006 page 2 of 7
Symbol
V (BR) DSS
V (BR) GSS
IDSS
IGSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
Min
–60
±20
—
—
–1.0
—
—
5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.11
0.16
8
580
300
85
10
55
85
60
–1.2
60
Max
—
—
–10
±10
–2.0
0.15
0.23
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16 V, VDS = 0
ID = –1 mA, VDS = –10 V
ID = –6 A, VGS = –10 V Note 4
ID = –6 A, VGS = –4 V Note 4
ID = –6 A, VDS = –10 V Note 4
VDS = –10 V
VGS = 0
f = 1 MHz
VGS = –10 V
ID = –6 A
RL = 6 Ω
IF = –12 A, VGS = 0
IF = –12 A, VGS = 0
diF/dt = 50 A/µs
2SJ540
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–100
10 µs
ID (A)
–50
60
Drain Current
Channel Dissipation
Pch (W)
80
40
20
10
–20
PW
–10
0
50
100
–2
–1
–0.5
Tc (°C)
–3
–10
10
Drain to Source Voltage
Typical Output Characteristics
m
µs
s
VDS (V)
VDS = –10 V
Pulse Test
–3.5 V
–4 V
Pulse Test
–8
–6
–3 V
–4
–2.5 V
–2
Drain Current
–6
–4
–2
25°C
Tc = 75°C
VGS = –2 V
0
–100
–10
–10 V
–5 V
–8
–30
Typical Transfer Characteristics
ID (A)
–10
ID (A)
=
m
O
s(
pe
1
ra
sh
tio
ot
n
)
(T
c=
2
5°
Operation in
C)
this area is
limited by RDS (on)
–5
Ta = 25°C
–0.1
–0.1 –0.3
–1
200
150
Case Temperature
Drain Current
DC
0
–0.2
0
0
–2
–4
–6
Drain to Source Voltage
–8
–25°C
0
–10
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
ID = –5 A
–0.6
–0.4
–2 A
–0.2
–1 A
0
0
–4
–8
–12
Gate to Source Voltage
Rev.4.00 Jun 05, 2006 page 3 of 7
–16
–20
VGS (V)
0
–1
–2
–3
–4
–5
VGS (V)
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
1
1
Pulse Test
0.5
0.2
VGS = –4 V
0.1
–10 V
0.05
0.02
0.01
–0.1 –0.3
–1
–3
Drain Current
–10
–30
ID (A)
–100
2SJ540
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
–2 A
ID = –5 A
0.3
VGS = –4 V
0.2
–1 A
–5 A
0.1
–1 A, –2 A
–10 V
0
–40
0
40
80
Case Temperature
120
160
20
10
5
2
VDS = –10 V
Pulse Test
0.2
–0.1 –0.2
–0.5
–1
–2
–5
–10
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
75°C
0.5
Tc (°C)
500
100
50
20
10
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
5
–0.1 –0.2
–0.5
–1
–2
Reverse Drain Current
–5
200
50
Coss
20 VGS = 0
f = 1 MHz
10
0
–10
–10
–60
–8
–12
VDD = –50 V
–25 V
–10 V
–80
–16
ID = –12 A
–100
0
8
16
Gate Charge
Rev.4.00 Jun 05, 2006 page 4 of 7
24
32
Qg (nc)
–20
40
VGS (V)
–4
VGS
VDS
–40
–50
1000
Switching Time t (ns)
–40
–30
Switching Characteristics
Gate to Source Voltage
–20
–20
Drain to Source Voltage VDS (V)
0
VDD = –10 V
–25 V
–50 V
Crss
100
IDR (A)
0
Ciss
500
Dynamic Input Characteristics
VDS (V)
25°C
1
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
Tc = –25°C
300
td(off)
100
tf
30
tr
td(on)
10
3
VGS = –10 V, VDD = –30 V
PW = 5 µs, duty ≤ 1 %
1
–0.1 –0.2
–0.5
–1
Drain Current
–2
ID (A)
–5
–10
2SJ540
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current IDR (A)
–10
–8
–10 V
–6
–5 V
–4
VGS = 0, 5 V
–2
Pulse Test
0
0
–0.4
–0.8
–1.2
–1.6
Source to Drain Voltage
–2.0
20
IAP = –12 A
VDD = –25 V
duty < 0.1 %
Rg ≥ 50 Ω
16
12
8
4
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSD (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 2.5°C/W, Tc = 25°C
0.05
0.02
0.03
0.0
1s
1
t
ho
D=
PDM
pu
0.01
10 µ
lse
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
IAP
D.U.T
VDD
VDS
ID
Vin
–15 V
50 Ω
0
Rev.4.00 Jun 05, 2006 page 5 of 7
VDD
2SJ540
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
Vin
–10 V
50 Ω
VDD
= –30 V
Vout
td(on)
Rev.4.00 Jun 05, 2006 page 6 of 7
10%
tr
10%
td(off)
tf
2SJ540
Package Dimensions
Package Name
TO-220AB
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Previous Code
TO-220AB / TO-220ABV
MASS[Typ.]
1.8g
Unit: mm
2.79 ± 0.2
11.5 Max
10.16 ± 0.2
9.5
+0.1
φ 3.6 –0.08
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
0.76 ± 0.1
2.54 ± 0.5
14.0 ± 0.5
2.7 Max
1.5 Max
0.5 ± 0.1
2.54 ± 0.5
Ordering Information
Part Name
2SJ540-E
Quantity
500 pcs
Shipping Container
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Jun 05, 2006 page 7 of 7
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Colophon .6.0