KEXIN 2SJ605

Transistors
IC
SMD Type
MOS Field Effect Transistors
2SJ605
TO-263
1 .2 7 -0+ 0.1.1
MAX. (VGS = -10 V, ID = -33 A)
RDS(on)2 = 31 m
MAX. (VGS = -4.0 V, ID = -33 A)
Low input capacitance
0.1max
+0.1
1.27-0.1
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
2 .5 4 -0+ 0.2.2
5 .2 8 -0+ 0.2.2
Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A)
Built-in gate protection diode
+0.2
4.57-0.2
5 .6 0
RDS(on)1 = 20 m
8 .7 -0+ 0.2.2
Super low on-state resistance:
+0.1
1.27-0.1
1 5 .2 5 -0+ 0.2.2
Features
Unit: mm
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
-60
V
Gate to Source Voltage
VGSS
20
V
ID
65
A
ID(pulse)
200
A
Drain Current(DC)
Drain Current(pulse) *1
Total Power Dissipation
PT
1.5
Channel Temperature
Tch
150
Storage temperature
Tstg
-55 to +150
W
Single Avalanche Current *2
IAS
-45
A
Single Avalanche Energy *2
EAS
203
mJ
*1. PW
10ìs,Dduty cycle 1%.
*2.Starting Tch=25 ,RG=25Ù,VGS=-20V-0, VDD=-30V
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Transistors
IC
SMD Type
2SJ605
Electrical Characteristics Ta = 25
Parameter
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Testconditons
IDSS
VDS = -60 V, VGS = 0 V
IGSS
VGS =
Typ
20 V, VDS = 0 V
VGS(off) VDS = -10 V, ID = -1 mA
Yfs
Min
VDS = -10 V, ID = -33 A
Max
Unit
-10
A
10
-1.5
-2.0
30
59
-2.5
A
V
S
RDS(on)1 VGS = -10 V, ID = -33 A
17
20
m
RDS(on)2 VGS = -4.0 V, ID = -33 A
22
31
m
Ciss
VDS = -10 V
4600
pF
Output Capacitance
Coss
VGS = 0 V
820
pF
Feedback Capacitance
Crss
f = 1 MHz
330
pF
Turn-on Delay Time
td(on)
VDD = -30 V, ID = -33 A
15
ns
VGS = -10 V
14
ns
RG = 0
100
ns
58
ns
Rise Time
Turn-off Delay Time
Fall Time
2
Symbol
tr
td(off)
tf
Total Gate Charge
Qg
VDD= -48 V
87
nC
Gate-Source Charge
Qgs
VGS = -10 V
15
nC
Gate-Drain Charge
Qgd
ID = -65 A
22
nC
Diode Forward Voltage
VF(S-D)
IF = 65 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 65 A, VGS = 0 V
53
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A /
110
nC
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