HITACHI 2SK1296

2SK1296
Silicon N-Channel MOS FET
Application
TO–220AB
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
2
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
1
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
60
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————
Drain current
ID
30
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
120
A
———————————————————————————————————————————
Body to drain diode reverse drain current
IDR
30
A
———————————————————————————————————————————
Channel dissipation
Pch**
75
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*
PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at TC = 25 °C
2SK1296
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
———————————————————————————————————————————
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
ID = 10 mA, VGS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current
IDSS
—
—
250
µA
VDS = 50 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
ID = 1 mA, VDS = 10 V
———————————————————————————————————————————
Static drain to source on state
resistance
RDS(on)
—
0.024
0.028
Ω
ID = 15 A, VGS = 10 V *
———————————
——————————–
—
ID = 15 A, VGS = 4 V *
0.030
0.040
———————————————————————————————————————————
Forward transfer admittance
|yfs|
17
27
—
S
ID = 15 A, VDS = 10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
2250
—
pF
VDS = 10 V, VGS = 0,
————————————————————————————————
Output capacitance
Coss
—
1230
—
pF
f = 1 MHz
————————————————————————————————
Reverse transfer capacitance
Crss
—
300
—
pF
———————————————————————————————————————————
Turn-on delay time
td(on)
—
20
—
ns
————————————————————————————————
Rise time
tr
—
125
—
ns
ID = 15 A, VGS = 10 V,
RL = 2 Ω
————————————————————————————————
Turn-off delay time
td(off)
—
390
—
ns
————————————————————————————————
Fall time
tf
—
225
—
ns
———————————————————————————————————————————
Body to drain diode forward
voltage
VDF
—
1.3
—
V
IF = 30 A, VGS = 0
———————————————————————————————————————————
Body to drain diode reverse
recovery time
trr
—
160
—
ns
IF = 30 A, VGS = 0,
diF/dt = 50 A/µs
———————————————————————————————————————————
* Pulse Test
2SK1296
Maximum Safe Operation Area
Power vs. Temperature Derating
500
150
0.5
0.1
4V
5V
10 V
Pulse Test
3V
20
0
s
ra
(1
tio
Operation in this area
is limited by RDS (on)
Ta = 25°C
n
Sh
ot
(T
C
=
)
25
°C
)
100
0.3
1.0
3
10
30
Drain to Source Voltage VDS (V)
VDS = 10 V
Pulse Test
3.5 V
30
10
m
pe
50
VGS = 2.5 V
6
2
4
8
10
Drain to Source Voltage VDS (V)
40
Drain Current ID (A)
Drain Current ID (A)
40
15 V
10
O
Typical Transfer Characteristics
Typical Output Characteristics
50
C
µs
50
100
Case Temperature TC (°C)
0
1.0
=
D
10
5
µs
20
2
0
PW
50
s
m
50
10
100
100
10
Drain Current ID (A)
200
1
Channel Dissipation Pch (W)
150
30
20
10
0
75°C
TC = 25°C
–25°C
3
1
2
4
Gate to Source Voltage VGS (V)
5
2SK1296
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
VDS (on) (V)
2.0
1.6
Pulse Test
ID = 50 A
1.2
0.8
20 A
0.4
0
10 A
6
2
4
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.1
VGS = 4 V
0.05
0.02
0.005
ID = 20 A
5 A,10 A
VGS = 4 V
0.03
0.02
0.01
0
–40
20 A
5 A,10 A
VGS = 10 V
Pulse Test
0
40
120
80
Case Temperature TC (°C)
5
2
10 20
50 100
Drain Current ID (A)
200
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
0.04
10 V
0.01
Static Drain to Source on State
Resistance vs. Temperature
0.05
Pulse Test
0.2
160
50
–25°C
TC = 25°C
75°C
20
10
5
2
VDS = 10 V
Pulse Test
1.0
0.5
1.0
20
2
10
5
Drain Current ID (A)
50
2SK1296
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
VGS = 0
f = 1 MHz
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
500
Ciss
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
1000
Coss
Crss
100
20
10
10
0.5
2
1.0
5
10
20
Reverse Drain Current IDR (A)
0
50
Switching Characteristics
Dynamic Input Characteristics
60
VDS
16
12
VGS
40
0
8
VDD = 50 V
25 V
10 V
4
ID = 30 A
40
80
120
160
Gate Charge Qg (nc)
0
200
td (off)
200
Switching Time t (ns)
VDD = 100 V
25 V
50 V
80
20
500
20
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
100
10
20
30
40
50
Drain to Source Voltage VDS (V)
tf
100
tr
50
td (on)
20
10
5
0.5
VGS = 10 V
PW = 2 µs, duty < 1 %
1.0
5
2
10
20
Drain Current ID (A)
50
2SK1296
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
50
Pulse Test
40
10 V
30
5V
20
10
VGS = 0, –5 V
Normalized Transient Thermal Impedance γs (t)
0
0.4
1.2
0.8
2.0
1.6
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
TC = 25°C
D=1
0.5
0.3
0.2
0.1
0.05
0.02
0.1
0.03
0.01
10 µ
θch–c (t) = γs (t) · θch–c
θch–c = 1.67°C/W, TC = 25°C
PDM
e
uls
0.01 hot P
1S
T
100 µ
1m
10 m
Pulse Width PW (s)
100 m
D =PW
T
PW
1
10
2SK1296
Switching Time Test Circuit
Wavewforms
Vin Monitor
90 %
Vout Monitor
D.U.T
RL
Vin
Vout
10 %
10 %
10 %
50 Ω
Vin = 10 V
. 30 V
VDD =
.
td (on)
90 %
tr
90 %
td (off)
tf