2SK2004-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof 0.9 ±0.3 Outline Drawings Features +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Applications Switching regulators UPS DC-DC converters General purpose power amplifier 1:Gate 2:Drain 3:Source L-type S-type EIAJ Equivalent circuit schematic Maximum ratings and characteristics Absolute maximum ratings ( Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] IDR VGS PD Tch Tstg Rating 1000 4 16 4 ±30 80 +150 -55 to +150 Unit V A A A V W °C °C Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Symbol V(BR)DSS VGS(th) IDSS Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=1000V VGS=0V Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr VGS=±30V VDS=0V ID=2A VGS=10V ID=2A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V RG=10 Ω ID=4A VGS=10V Min. Typ. 1000 2.5 Tch=25°C Tch=125°C L=100µH Tch=25°C IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/µs Tch=25°C 3.0 10 0.2 10 2.7 2.0 5.0 1300 100 35 20 15 85 20 4 1.1 400 3 Max. 3.5 500 1.0 100 3.6 1950 150 55 30 25 130 30 1.65 Units V V µA mA nA Ω S pF ns A V ns µC Thermal characteristics Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case Min. Typ. Max. Units 125 1.56 °C/W °C/W 1 2SK2004-01L,S FUJI POWER MOSFET Characteristics Typical output characteristics On state resistance vs. Tch 8 10 8 6 ID [A] RDS(on) 6 [Ω] 4 4 2 2 0 0 10 20 0 -50 30 0 50 Tch [ °C ] VDS [ V ] 100 150 Typical Drain-Source on state resistance vs. ID Typical transfer characteristics 12 8 10 6 8 RDS(on) [Ω] ID 4 [A] 6 4 2 2 0 0 0 2 4 VGS 6 [V] 8 0 10 5.0 8 4.0 6 3.0 4 VGS(th) [V] 2.0 2 1.0 gfs [S] 0 2 4 ID [ A ] 6 8 4 6 ID [ A ] 8 10 12 Gate threshold voltage vs. Tch Typical forward transconductance vs. ID 10 0 2 10 0 -50 0 50 100 150 Tch [ °C ] 2 2SK2004-01L,S FUJI POWER MOSFET Typical input charge Typical capacitance vs. VDS 101 20 800 100 VDS [V] C [nF] VGS 10-1 [V] 10 400 10-2 10-3 10 0 0 10 20 30 40 0 0 20 40 60 VDS [ V ] Qg [ nC ] Forward characteristics of reverse diode Allowable power dissipation vs. Tc 2 80 100 80 101 60 IF 100 [A] PD [W] 40 10-1 20 10-2 0 0 0.5 1.0 1.5 0 50 VSD [ V ] 100 150 Tc [ °C ] Safe operating area 102 Transient thermal impedance 101 ID [ A ]100 100 Rth [°C/W] 10-1 10-2 10-5 10-1 10-4 10-3 10-2 t [ sec. ] 10-1 100 101 10-2 101 102 103 104 VDS [ V ] 3