Ordering number:ENN6148A N-Channel Silicon MOSFET 2SK2623 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-resistance. · Low Qg. unit:mm 2083B [2SK2623] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 3 2.3 2.3 2092B [2SK2623] 6.5 5.0 4 2.3 0.5 2.3 2 2.5 1 0.6 0.8 0.85 1.2 7.0 5.5 1.5 0.5 3 1.2 0 to 0.2 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 81000TS (KOTO) TA-2287 No.6148–1/4 2SK2623 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Conditions Ratings Unit VDSS VGSS 600 V ±30 V ID 1.5 A IDP 6 A 1.0 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Diode Forward Voltage V VDS=600V, VGS=0 1.0 mA ±100 nA 5.5 V 5.5 Ω 4.2 VDS=20V, f=1MHz VDS=20V, f=1MHz 300 pF 90 pF Qg Fall Time 600 Unit VGS=15V, ID=0.8A Crss Turn-OFF Delay Time max RDS(on) Ciss Reverse Transfer Capacitance Rise Time typ VGS=±30V, VDS=0 Coss Turn-ON Delay Time ID=1mA, VGS=0 Ratings min IGSS VGS(off) | yfs | Output Capacitance Total Gate Charge Conditions VDS=10V, ID=1mA VDS=10V, ID=0.8A VDS=20V, f=1MHz VDS=200V, VGS=10V, ID=1.5A 3.5 0.5 1.0 S 45 pF 8 nC td(on) See specified Test Circuit 9 ns tr See specified Test Circuit 12 ns td(off) See specified Test Circuit 20 ns tf See specified Test Circuit 17 IS=1.5A, VGS=0 0.8 VSD ns 1.2 V Marking : K2623 Switching Time Test Circuit VDD=200V PW=1µs D.C.≤0.5% VIN ID=0.8A RL=250Ω VIN 15V 0V D VOUT G 2SK2623 P.G RGS 50Ω S No.6148–2/4 2SK2623 I D - VDS 4.0 VDS=10V 15V 3.5 Drain Current, ID – A 3.0 8V 2.5 2.0 1.5 7V 1.0 0 0 10 20 30 40 25°C 2.0 75°C 1.5 1.0 0.5 VGS=6V 0.5 Tc=-25°C 2.5 10V Drain Current, ID – A ID - VGS 3.0 0 0 50 5 Drain-to-Source Voltage, VDS – V | yf s | - I D 7 5 3 2 °C -25 Tc= C 75° 7 5 25°C 3 2 0.1 0.1 2 3 5 7 2 1.0 3 8 Tc=25°C 0.5A 7 6 5 4 3 2 1 0 5 0 2 4 Drain Current, ID – A 6 8 10 12 14 Cutoff Voltage, VGS(off) – V Static Drain-to-Source On-State Resistance, RDS(on) – Ω 0V =1 S 5V VG =1 , S A G .8 =0 8A,V . ID =0 ID 6 5 4 3 2 5 4 3 2 1 1 0 -50 -25 0 25 50 75 100 125 0 -50 150 0 Case Temperature, Tc – ˚C td (of f) tr td(on) 0.1 2 3 5 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 3 2 1.0 7 VGS=0 75°C 25°C -25° C tf 10 7 5 7 1.0 Drain Current, ID – A 150 Tc= Forward Current, IF – A 3 2 3 2 100 I F - VSD 2 VDD=200V VGS=15V 100 7 5 50 Case Temperature, Tc – ˚C SW Time - I D 1000 7 5 Switching Time, SW Time – ns 20 VDS=10V VIGS =10V D=1mV 6 9 7 18 V GS(off) - Tc 7 10 8 16 Gate-to-Source Voltage, VGS – V R DS(on) - Tc 11 20 ID=1.5A 0.8A 9 1.0 15 R DS(on) - VGS 10 VDS=10V Static Drain-to-Source On-State Resistance, RDS (on) – Ω Forward Transfer Admittance, | yfs | – S 10 10 Gate-to-Source Voltage, VGS – V 2 3 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Diode Forward Voltage, VSD – V No.6148–3/4 2SK2623 A S O Ciss,Coss,Crss - VDS 1000 10 7 5 f = 1MHz 7 Ciss 3 Drain Current, ID – A Ciss, Coss, Crss – pF 5 2 100 Cos s 7 5 I DP =6A 3 2 1.0 7 5 DC 3 2 2 3 10 0 0.01 1.0 2 5 10 15 20 25 30 PD - 2 Allowable Power Dissipation, PD – W Allowable Power Dissipation, PD – W 0.4 0.2 40 60 80 5 7 10 100 120 Ambient Temperature, Ta – ˚C 2 3 PD - 32 0.6 20 3 Ta 0.8 0 s s ms er at io n 5 7 100 2 3 5 7 1000 140 160 Drain-to-Source Voltage, VDS – V 1.0 0 µs Tc=25°C Single pulse Drain-to-Source Voltage, VDS – V 1.2 10 op 0µ Operation in this area is limited by RDS(on). 3 s 1m I D =1.5A 0.1 7 5 Crs 10 10 140 160 Tc 30 28 24 20 16 12 8 4 0 0 20 40 60 80 100 120 Case Temperature, Tc – ˚C Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice. PS No.6148–4/4