Ordering number : ENN3447D 2SK1444LS N-Channel Silicon MOSFET 2SK1444LS Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. Micaless package facilitating mounting. unit : mm 2078C [2SK1444LS] 10.0 4.5 2.8 0.6 16.1 16.0 3.5 7.2 3.2 1.2 1.2 14.0 3.6 0.9 0.75 0.7 1 2 3 2.4 1 : Gate 2 : Drain 3 : Source Specifications 2.55 Absolute Maximum Ratings at Ta=25°C Parameter Symbol 2.55 SANYO : TO-220FI(LS) Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 Gate-to-Source Voltage VGSS ±30 V 3 A Drain Current (DC) ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 12 A 2.0 W Allowable Power Dissipation PD 25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Conditions V(BR)DSS IDSS IGSS ID=1mA, VGS=0 VDS=450V, VGS=0 VGS=±30V, VDS=0 Ratings min typ max 450 (Note) Be careful in handling the 2SK1444LS because it has no protection diode between gate and source. Marking : K1444 Unit V 1.0 mA ±100 nA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1501 TS IM TA-3431 / 61099 TH (KT) / 72597 TS (KOTO) / 7151 JN (KOTO) No.3447-1/4 2SK1444LS Continued from preceding page. Parameter Symbol Ratings Conditions min typ Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 Forward Transfer Admittance yfs RDS(on) VDS=10V, ID=0.5A 1.1 Static Drain-to-Source On-State Resistance Unit max 3.0 V 2.6 Ω 2.2 S Input Capacitance Ciss ID=0.5A, VGS=10V VDS=20V, f=1MHz 400 pF Output Capacitance Coss VDS=20V, f=1MHz 60 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 25 pF Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns Rise Time tr td(off) See specified Test Circuit. 20 ns See specified Test Circuit. 80 ns See specified Test Circuit. 35 Turn-OFF Delay Time Fall Time tf VSD Diode Forward Voltage 2.0 ns IS=3A, VGS=0 1.8 V Switching Time Test Circuit 10V 0V VDD= 200V VIN ID=1.5A RL=133Ω VIN VOUT D PW=1µs D.C.≤0.5% G S RGS 50Ω P.G 2SK1444LS ID -- VDS 6 ID -- VGS 6 Tc= --25°C V Drain Current, ID -- A V 4 =1 GS 5 5.5V V 6.0 Drain Current, ID -- A 0.0 5 5.0V 3 2 4.5V 1 4.0V 25°C 4 75°C 3 2 1 0 0 0 4 8 12 16 20 Drain-to-Source Voltage, VDS -- V 4 2 0 24 6 8 10 VDS=10V Cutoff Voltage, VGS(off) -- V 4 3 2 14 ITR01395 VGS(off) -- Tc 5 VDS=10V ID=1mA 6 5 12 Gate-to-Source Voltage, VGS -- V ITR01394 ID -- Tc 7 Drain Current, ID -- A VDS=10V 4 3 2 1 1 0 --60 --40 --20 0 20 40 60 80 100 Case Temperature, Tc -- °C 120 140 160 ITR01396 0 --60 --40 --20 0 20 40 60 80 100 Case Temperature, Tc -- °C 120 140 160 ITR01397 No.3447-2/4 2SK1444LS RDS(on) -- VGS 4 RDS(on) -- Tc 5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Tc=25°C 3 ID =3.0 A 1.5A 2 1.0A 1 0 2 4 8 6 10 12 Gate-to-Source Voltage, VGS -- V 75 °C 3 2 2 3 5 7 2 1.0 7 10 ITR01400 3 5 Drain Current, ID -- A 1000 Drain Current, ID -- A Ciss, Coss, Crss -- pF Ciss 5 3 2 100 7 Coss 5 3 10 16 20 24 Drain-to-Source Voltage, VDS -- V 5 tf tr 2 td(on) 10 he at sin k 0.8 0.4 0 0 20 40 60 80 100 3 2 120 Ambient Temperature, Ta -- °C 5 7 2 1.0 3 5 ITR01401 ASO <1µs IDP=12A ID=3A 3 1 10 0µs 0µ s 1m s 2 10 1.0 7 5 10 ms 0m s DC 3 op Operation in this area is limited by RDS(on). 2 era tio n Tc=25°C Single pulse 2 3 5 7 10 140 160 ITR01404 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V 5 7 1000 ITR01403 PD -- Tc 28 1.6 1.2 160 3 32 2.0 No 140 ITR01399 7 ITR01402 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 28 PD -- Ta 2.4 120 td (off ) 100 3 2 12 100 0.1 7 5 Crss 2 8 80 2 10 7 5 7 4 60 VDD=200V VGS=10V P.W.=1µs D.C.≤0.5% 2 VGS=0 f=1MHz 0 40 20 Drain Current, ID -- A Ciss, Coss, Crss -- VDS 2 0 SW Time -- ID 7 5 0.1 0.1 0.1 --20 3 5 7 --40 VDS=10V 7 5 1 Case Temperature, Tc -- °C Switching Time, SW Time -- ns Forward Transfer Admittance, yfs -- S Tc 1.0 2 ITR01398 °C -25 =- 2 ,V 0V .5A =2 1 S = G ID ,V .5A =1 ID 5 C 25° 3 0V =1 GS 3 0 --60 14 yfs -- ID 5 4 25 24 20 16 12 8 4 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 ITR01405 No.3447-3/4 2SK1444LS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice. PS No.3447-4/4