MITSUBISHI INTELLIGENT POWER MODULES PM100RSA060 FLAT-BASE TYPE INSULATED PACKAGE A B U R W Q U AB AD 12 3 4 5678 13 15 17 19 9 11 10 12 F Z - DIA. (4 TYP.) C AA - THD (6 TYP.) U N AG S E P M 1. V UPC 2. UFO 3. U P 4. V UPI 5. V VPC 6. VFO 7. V P 8. V VPI 9. V WPC 10. WFO 14 16 18 AD (15 TYP.) B M Y (4 TYP.) AB U W W U V X X AG K J J 11. WP 12. V WPI 13. V NC 14. V NI 15. B R 16. U N 17. V N 18. WN 19. FO P D Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. 2.54 MM DIA. (2 TYP.) 0.5 MM SQ. PIN (19 TYP.) AE T VUPI UP U FO V CC OUT VUPC FO GND GND IN VP V FO V VPI V CC OUT SI V VPC IN FO SI W FO V WPI V CC OUT GND GND V WPC WP FO SI AC GND GND UN V CC OUT IN FO SI SI TEMP GND GND V CC IN FO VN VNI V CC GND GND OUT IN FO SI V CC GND GND OUT IN SI FO FO BR V NC WN V GND GND L AF IN N OUT G H Features: u Complete Output Power Circuit u Gate Drive Circuit B N W V U P Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Inches Millimeters A 4.33±0.04 110.0±1.0 Dimensions S 0.67 17.0 B 3.74±0.02 95.0±0.5 T 0.52 13.2 C 3.50±0.04 89.0±1.0 U 0.39 10.0 D 3.27 83.0 V 0.27 7.0 E 2.91±0.02 74.0±0.5 W 0.30 7.5 F 2.44 62.0 X 0.24 6.0 G 1.28 32.6 Y 0.24 Rad. Rad. 6.0 H 1.24 31.6 Z 0.22 Dia. Dia. 5.5 M5 AC 0.10 2.6 20.0 AD 0.08 2.0 Type J 1.02 26.0 AA Metric M5 0.94 24.0 AB 0.127 L 0.87 +0.06/-0.0 22.0 +1.5/-0.0 0.79 Applications: u Inverters u UPS u Motion/Servo Control u Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM100RSA060 is a 600V, 100 Ampere Intelligent Power Module. K M u Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage 3.22 N 0.76 19.4 AE 0.07 1.8 P 0.75 19.0 AF 0.06 1.6 Q 0.708 17.98 AE 0.02±0.01 0.5±0.3 R 0.670 17.02 PM Current Rating Amperes VCES Volts (x 10) 100 60 Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM100RSA060 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Symbol Ratings Units Tj -20 to 150 °C Storage Temperature Tstg -40 to 125 °C Case Operating Temperature TC -20 to 100 °C Power Device Junction Temperature Mounting Torque, M5 Mounting Screws — 1.47 ~ 1.96 N·m Mounting Torque, M5 Main Terminal Screw — 1.47 ~ 1.96 N·m Module Weight (Typical) — 550 Grams 400 Volts 2500 Vrms 20 Volts 20 Volts 20 Volts 20 mA Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C) VCC(prot.) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso Control Sector Supply Voltage (Applied between VUP1-VUPC, VVP1 -VVPC, VWP1-VWPC, VN1-VNC) VD Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN · B r-VNC) VCIN Fault Output Supply Voltage (Applied between UFO-V UPC, VFO-VVPC, WFO-V WPC, FO-V NC) VFO Fault Output Current (Sink Current of UFO, VFO, W FO and FO Terminal) I FO IGBT Inverter Sector Collector-Emitter Voltage (V D = 15V, VCIN = 15V) VCES 600 Volts IC 100 Amperes Peak Collector Current, ± I CP 200 Amperes Supply Voltage (Applied between P - N) VCC 450 Volts VCC(surge) 500 Volts PC 403 Watts VCES 600 Volts Collector Current, ± Supply Voltage, Surge (Applied between P - N) Collector Dissipation Brake Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, (TC = 25°C) Peak Collector Current, (T C = 25°C) Supply Voltage (Applied between P - N) IC 30 Amperes I CP 60 Amperes VCC 450 Volts VCC(surge) 500 Volts Collector Dissipation PC 208 Watts Diode Forward Current IF 30 Amperes VR(DC) 600 Volts Supply Voltage, Surge (Applied between P - N) Diode DC Reverse Voltage Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM100RSA060 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units OC -20°C ≤ T ≤ 125°C, VD = 15V 158 240 — Amperes 39 53 — Amperes — 360 — Amperes — 79 — Amperes Control Sector Over Current Trip Level Inverter Part Over Current Trip Level Brake Part Short Circuit Trip Level Inverter Part SC -20°C ≤ T ≤ 125°C, VD = 15V Short Circuit Trip Level Brake Part Over Current Delay Time Over Temperature Protection Supply Circuit Under Voltage Protection t off(OC) VD = 15V — 10 — µs OT Trip Level 111 118 125 °C OTr Reset Level — 100 — °C UV Trip Level 11.5 12.0 12.5 Volts UVr Reset Level — 12.5 — Volts Supply Voltage VD Applied between V UP1-VUPC, 13.5 15 16.5 Volts Circuit Current ID — 44 60 mA VVP1-VVPC, VWP1-VWPC, VN1 -VNC VD = 15V, VCIN = 15V, VN1-V NC VD = 15V, VCIN = 15V, VXP1-VXPC — 13 18 mA Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts Input OFF Threshold Voltage Vth(off) UP-V UPC, V P-VVPC, WP-VWPC, 1.7 2.0 2.3 Volts PWM Input Frequency f PWM UN · VN · WN · Br-VNC 3-φ Sinusoidal — 15 20 kHz Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA IFO(L) VD = 15V, VFO = 15V — 10 15 mA tFO VD = 15V 1.0 1.8 — ms Minimum Fault Output Pulse Width Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM100RSA060 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units VCE = VCES, Tj = 25°C — — 1.0 mA VCE = VCES, Tj = 125°C — — 10 mA IGBT Inverter Sector Collector Cutoff Current Diode Forward Voltage Collector-Emitter Saturation Voltage I CES VEC -IC = 100A, VD = 15V, VCIN = 5V — 2.2 3.3 Volts VCE(sat) VD = 15V, I CIN = 0V, IC = 100A — 1.8 2.7 Volts VD = 15V, VCIN = 0V, I C = 100A, — 1.75 2.63 Volts Tj = 125°C Inductive Load Switching Times 0.4 0.8 2.0 µs t rr VD = 15V, VCIN = 0 ↔ 15V — 0.15 0.3 µs t C(on) VCC = 300V, I C = 100A — 0.4 1.0 µs t off Tj = 125°C — 2.0 2.9 µs — 0.6 1.2 µs — 2.7 3.5 Volts — 3.1 4.0 Volts IF = 30A, VD = 15V, VCIN = 5V — 1.7 2.7 Volts VCE = VCES, Tj = 25°C — — 1 mA VCE = VCES, Tj = 125°C — — 10 mA t on t C(off) Brake Sector Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 30A, Tj = 25°C VD = 15V, VCIN = 0V, IC = 30A, Tj = 125°C Diode Forward Voltage VFM Collector Cutoff Current ICES Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM100RSA060 FLAT-BASE TYPE INSULATED PACKAGE Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT — — 0.31 °C/Watt Rth(j-c)F Each Inverter FWDi — — 0.7 °C/Watt Rth(c-f)Q Each Brake IGBT — — 0.6 °C/Watt Contact Thermal Resistance Rth(c-f)F Each Brake FWDi — — 1.5 °C/Watt R th(c-f) Case to Fin Per Module, — — 0.027 °C/Watt Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage VCC Applied across P-N Terminals 0 ~ 400 Volts Applied between VUP1-VUPC , 15 ± 1.5 Volts VD VN1-VNC, VVP1-VVPC, VWP1-VWPC Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts Input OFF Voltage VCIN(off) UP-VUPC, VP-VVPC, WP-VWPC , UN · VN · WN · Br-V NC 4.0 ~ VD Volts PWM Input Frequency f PWM Using Application Circuit 5 ~ 20 kHz Minimum Dead Time tDEAD Input Signal ≥ 2.5 µs Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM100RSA060 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 2.0 1.5 1.0 0.5 0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 100 VD = 17V 15 80 13 60 40 20 0 0 12 14 16 18 20 0 0.5 1.0 1.5 2.0 COLLECTOR CURRENT, IC, (AMPERES) SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 100 101 100 VCC = 300V VD = 15V 102 VCC = 300V VD = 15V SWITCHING TIMES, tc(on), tc(off), (µs) Tj = 25oC Tj = 125oC toff 100 ton REVERSE RECOVERY TIME, trr, (µs) VCC = 300V VD = 15V Inductive Load SWITCHING TIMES, ton, toff, (µs) Tj = 25oC VCIN = 0V Inductive Load Tj = 25oC Tj = 125oC 10-1 tc(off) Inductive Load Tj = 25oC Tj = 125oC Irr 10-1 101 trr tc(on) 10-1 100 101 10-2 100 102 101 10-2 100 102 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR REVERSE CURRENT, -IC, (AMPERES) DIODE FORWARD CHARACTERISTICS OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) OVER CURRENT TRIP LEVEL VS. TEMPERATURE (TYPICAL) OVER CURRENT TRIP LEVEL % (NORMALIZED) 101 100 140 Tj = 25oC OVER CURRENT TRIP LEVEL % (NORMALIZED) COLLECTOR REVERSE CURRENT, -IC, (AMPERES) VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC 100 80 60 40 0 0 100 102 101 COLLECTOR CURRENT, IC, (AMPERES) 120 102 0.5 1.0 1.5 2.0 2.5 EMITTER-COLLECTOR VOLTAGE, VEC , (VOLTS) REVERSE RECOVERY CURRENT, Irr, (AMPERES) 2.5 120 IC = 100A VCIN = 0V Tj = 25oC Tj = 125oC COLLECTOR CURRENT, IC, (AMPERES) VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE VCE(sat), (VOLTS) 3.0 OUTPUT CHARACTERISTICS (TYPICAL) VD = 15V 120 100 80 60 0 0 12 14 16 18 SUPPLY VOLTAGE, VD, (VOLTS) 20 -50 0 50 100 150 JUNCTION TEMPERATURE, Tj, (oC) Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM100RSA060 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 15 UV UVr VD = 15V 120 14 UV TRIP-RESET LEVEL, UVt, UVr, (VOLTS) FAULT OUTPUT PULSE WIDTH % (NORMALIZED) 140 100 80 60 13 12 11 0 0 -50 0 50 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) 150 JUNCTION TEMPERATURE, Tj, (oC) -50 0 50 100 JUNCTION TEMPERATURE, Tj, (oC) 150 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.70oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 0.31oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM100RSA060 FLAT-BASE TYPE INSULATED PACKAGE Brake Part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 2.5 2.0 1.5 1.0 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC 0.5 0 40 2.5 2.0 1.5 1.0 IC = 30A VCIN = 0V Tj = 25oC Tj = 125oC 0.5 0 5 10 15 20 25 30 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) VD = 15V Tj = 25oC Tj = 125oC 101 100 0.4 0.8 1.2 1.6 DIODE FORWARD VOLTAGE, VF, (VOLTS) VD = 17V 13 20 10 12 14 16 18 20 0 1 2.0 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.6oC/W 10-2 10-1 TIME, (s) 100 4 3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 10-3 10-3 2 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) DIODE FORWARD CHARACTERISTICS 0 15 30 SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 102 Tj = 25oC VCIN = 0V 0 0 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 0 DIODE FORWARD CURRENT, IF, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE VCE(sat), (VOLTS) 3.0 OUTPUT CHARACTERISTICS (TYPICAL) 101 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 1.5oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) Sep.2000