2SK3151 Silicon N Channel MOS FET High Speed Power Switching REJ03G1076-0400 (Previous: ADE-208-747B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.4.00 Sep 07, 2005 page 1 of 7 2 S 3 2SK3151 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 100 ±20 50 200 50 50 250 125 150 –55 to +150 Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test Rev.4.00 Sep 07, 2005 page 2 of 7 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 100 ±20 — — 1.0 — — 30 — — — — — — — — — Typ — — — — — 11.5 16 50 4000 1650 590 30 280 830 450 0.95 100 Max — — ±10 10 2.5 15 25 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 VNote4 ID = 25 A, VGS = 4 V Note4 ID = 25 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 25 A, VGS = 10 V, RL = 1.2 Ω IF = 50 A, VGS = 0 IF = 50 A, VGS = 0 diF/ dt = 50 A/ µs 2SK3151 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating Drain Current ID (A) 1000 120 80 40 50 40 50 100 150 0 100 DC 30 Op 1 = s 10 m s( at ion Operation in this area is limited by RDS(on) m µs µs 1 sh ot (T c= ) 25 °C ) Ta = 25°C 1 2 20 10 5 50 100 200 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 100 VGS = 10 V Pulse Test 4V 3V 30 PW er 10 200 10 10 1 0 Drain Current ID (A) 300 3 Drain Current ID (A) Channel Dissipation Pch (W) 160 3.5 V 20 2.5 V 10 VDS = 10 V Pulse Test 80 60 40 75°C Tc = –25°C 20 25°C 2V 2 4 6 8 1 2 3 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.8 ID = 50 A 0.6 0.4 20 A 0.2 0 0 0 10 10 A 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.4.00 Sep 07, 2005 page 3 of 7 Static Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (V) 0 5 100 Pulse Test 50 VGS = 4 V 20 10 10 V 5 2 1 1 2 5 10 20 50 100 200 Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (mΩ) 2SK3151 50 Pulse Test 40 10,20 A ID = 50 A 30 50 A 4V 20 10, 20 A 10 VGS = 10 V 0 –50 0 50 100 150 200 VDS = 10 V Pulse Test 100 50 Tc = –25°C 20 10 25°C 5 75°C 2 1 0.5 0.1 0.3 1 3 10 30 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 30000 VGS = 0 f = 1 MHz Capacitance C (pF) 500 200 100 50 20 200 160 120 0.3 1 3 10 30 1000 Coss Crss 10 20 30 40 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID = 50 A VGS VDD = 100 V 50 V 25 V 16 12 VDS 80 8 40 4 0 Ciss 3000 100 0 100 VDD = 100 V 50 V 25 V 80 160 240 320 Gate Charge Qg (nc) Rev.4.00 Sep 07, 2005 page 4 of 7 0 400 50 5000 Switching Time t (ns) 10 0.1 10000 300 di / dt = 50 A / µs VGS = 0, Ta = 25°C Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 200 Case Temperature TC (°C) 1000 Drain to Source Voltage VDS (V) 500 td(off) 1000 tf 500 200 tr 100 50 20 10 0.1 0.2 td(on) VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 0.5 1 2 5 10 20 Drain Current ID (A) 50 2SK3151 40 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) (A) 50 Reverse Drain Current IDR Reverse Drain Current vs. Source to Drain Voltage 10 V 30 VGS = 0, –5 V 20 5V 10 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 250 IAP = 50 A VDD = 50 V duty < 0.1 % Rg > 50 Ω 200 150 100 50 0 25 VSDF (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 1.0°C/W, Tc = 25°C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 µ D= PW T 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (S) Avalanche Test Circuit VDS Monitor PW T Avalanche Waveform L EAR = 1 2 • L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 Ω 0 Rev.4.00 Sep 07, 2005 page 5 of 7 VDD 2SK3151 Switching Time Test Circuit Switching Time Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 Ω VDD = 30 V Vout 10% 10% 10% 90% td(on) Rev.4.00 Sep 07, 2005 page 6 of 7 tr 90% td(off) tf 2SK3151 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK3151-E Quantity 30 pcs Shipping Container Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. 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