2SK3284 Ordering number : ENA0168 N-Channel Silicon MOSFET 2SK3284 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 Gate-to-Source Voltage VGSS ±30 V ID 10 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW≤10µs, duty cycle≤1% 40 A Tc=25°C 50 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance V(BR)DSS IDSS IGSS VDS=10V, ID=1mA VDS=10V, ID=6A RDS(on) Ciss ID=6A, VGS=15V VDS=20V, f=1MHz Coss Reverse Transfer Capacitance Crss Qg Turn-ON Delay Time ID=1mA, VGS=0V VDS=320V, VGS=0V VGS=±30V, VDS=0V VGS(off) yfs Output Capacitance Total Gate Charge Conditions Ratings min typ Unit max 400 V 3 2.9 mA ±100 nA 4 5.8 0.43 VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=200V, VGS=10V, ID=10A 1.0 V S 0.55 Ω 1150 pF 350 pF 150 pF 40 nC ns td(on) tr See specified Test Circuit. 17 See specified Test Circuit. 30 ns See specified Test Circuit. 150 ns Fall Time td(off) tf See specified Test Circuit. 50 Diode Forward Voltage VSD IS=10A, VGS=0V Rise Time Turn-OFF Delay Time ns 1.2 V Note) Although the protection diode is contained between gate and source, be careful of handling enough. 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Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11006QB MS IM TB-00002033 No. A0168-1/4 2SK3284 Package Dimensions unit : mm 7002-001 0.6 1 1.0 2.54 2 0.7 1.2 4.2 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 0.3 0.6 1.0 2.54 5.08 1 : Gate 2 : Source 3 : Drain 6.2 5.2 7.8 2.5 10.0 6.0 SANYO : ZP Switching Time Test Circuit VDD=200V PW=1µs D.C.≤0.5% ID=6A RL=33.3Ω VGS=15V D VOUT G 2SK3284 P.G RGS=50Ω S ID -- VDS 20 VDS=10V 10V V 15 16 8V 14 12 7V 10 8 6 Tc= --25°C 20 VGS=6V 4 Drain Current, ID -- A 18 Drain Current, ID -- A ID -- VGS 25 25°C 15 75°C 10 5 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Drain-to-Source Voltage, VDS -- V IT10368 0 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT10369 No. A0168-2/4 2SK3284 RDS(on) -- VGS 2.0 RDS(on) -- Tc 1.4 ID=6A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.6 1.4 1.2 1.0 Tc=75°C 0.6 25°C 0.4 --25°C 0.2 5 6 7 8 9 10 11 12 13 14 Gate-to-Source Voltage, VGS -- V 7 3 2 25 C 5° °C 7 1.0 7 0.4 0.2 --40 --20 80 100 120 140 160 IT10371 IS -- VSD VGS=0V 3 2 0.01 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 3 5 0 3 1000 7 5 Cos s 2 Cr ss 3 5 3 td(off) 2 100 7 tf 5 3 td(on) 2 tr 10 7 0.1 10 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 100 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 10 15 20 25 30 Total Gate Charge, Qg -- nC 35 5 3 40 45 IT10376 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A VDS=200V ID=10A 5 2 IT10374 VGS -- Qg 10 1.5 IT10373 VDD=200V VGS=15V 2 5 1.2 7 Switching Time, SW Time -- ns Ciss 0.9 SW Time -- ID 1000 2 100 7 5 0.6 Diode Forward Voltage, VSD -- V f=1MHz 3 0.3 IT10372 Ciss, Coss, Crss -- VDS 5 Gate-to-Source Voltage, VGS -- V 60 1.0 7 5 3 2 0 40 3 2 3 9 20 10 7 5 0.1 7 5 0 0 3 2 5 2 0.1 Ciss, Coss, Crss -- pF VG 5 10 5°C --2 = Tc =1 S 0.6 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, yfs -- S 15 VDS=10V 5 =6 , ID V 5 IT10370 yfs -- ID 2 A 0.8 0 --60 0 4 1.0 °C 25°C --25°C 0.8 1.2 Tc=7 5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.8 10 7 5 3 2 ASO ≤10µs 10 µs 10 0µ s IDP=40A ID=10A 1m s 10 ms 10 0m s DC op Operation in this era tio area is limited by RDS(on). n 1.0 7 5 3 2 0.1 7 5 3 2 5 IT10375 Tc=25°C Single pulse 0.01 1.0 2 3 5 7 10 2 3 5 7 100 2 Drain-to-Source Voltage, VDS -- V 3 5 7 IT10377 No. A0168-3/4 2SK3284 PD -- Tc Allowable Power Dissipation, PD -- W 60 50 40 30 20 10 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT10378 Note on usage : Since the 2SK3284 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. PS No. A0168-4/4