3LN03SS Ordering number : ENN8231 N-Channel Silicon MOSFET 3LN03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage (TYP 300V) [Built-in one side diode for protection between Gate-to-Source]. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage (*1) VGSS 10 V Drain Current (DC) ID Drain Current (Pulse) PW≤10µs, duty cycle≤1% 0.35 A 1.4 A Allowable Power Dissipation IDP PD 0.15 A Channel Temperature Tch 150 A Storage Temperature Tstg --55 to +150 W (*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source. Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 Forward Transfer Admittance VGS(off) yfs VGS=8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=180mA Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=180mA, VGS=4V ID=90mA, VGS=2.5V Input Capacitance RDS(on)3 Ciss ID=10mA, VGS=1.5V VDS=10V, f=1MHz Cutoff Voltage Output Capacitance Coss Reverse Transfer Capacitance Crss Ratings min typ Unit max 30 V µA 1 µA 1.3 V 0.7 0.9 Ω 0.8 1.15 Ω 1.6 2.4 0.4 0.36 1 0.6 S 30 VDS=10V, f=1MHz VDS=10V, f=1MHz Marking : YG Ω pF 7 pF 3.5 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22805PE TS IM TA-100963 No.8231-1/4 3LN03SS Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns Rise Time tr td(off) See specified Test Circuit. 4.5 ns See specified Test Circuit. 11 ns tf See specified Test Circuit. 6 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=10V, VGS=4V, ID=350mA 1 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=350mA 0.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=350mA Diode Forward Voltage VSD IS=350mA, VGS=0 0.2 nC 0.88 Package Dimensions 1.2 V Switching Time Test Circuit unit : mm 2179A VDD=15V VIN Top View 1.4 4V 0V 0.3 Side View 0.25 ID=180mA RL=83Ω VIN 0.1 D 2 G 0.3 1 0.45 0.07 1 2 3LN03SS 1 : Gate 2 : Source 3 : Drain 0.6 3 P.G ID -- VGS 0.8 V 25° C 5°C --25 °C 0.4 0.2 25° C 0.1 0.6 VDS=10V Ta= 7 VGS=1.5V 0.2 Drain Current, ID -- A 2.0 2.5 V Ta= --25 °C V 3.0 4. 6.0V 0V 3.5V Drain Current, ID -- A 0.3 S SANYO : SSFP ID -- VDS 0.4 50Ω 75° C Side View 0.07 Bottom View 0.2 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 3.0 ID=90mA 180mA 1.0 0 1.0 2.0 3.0 4.0 5.0 6.0 Gate-to-Source Voltage, VGS -- V 7.0 8.0 IT07512 1.5 2.0 2.5 3.0 3.5 IT07511 RDS(on) -- Ta 1.6 4.0 0 1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 2.0 0.5 IT07510 RDS(on) -- VGS 5.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω VOUT PW=10µs D.C.≤1% 1.4 0.8 3 1.4 1.2 =2.5V , VGS 1.0 0mA I D=9 0.8 =4.0V A, V GS 0m I D=18 0.6 0.4 0.2 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 IT08161 No.8231-2/4 3LN03SS yfs -- ID 1.0 75 3 2 25 °C °C 2 0.1 7 5 3 0.1 2 7 2 3 5 7 2 0.1 3 5 0.01 0.2 7 1.0 IT07514 td(off) td(on) tf 7 tr 5 0.8 1.0 1.2 1.4 IT07515 7 5 Ciss 3 Ciss, Coss, Crss -- pF 2 0.6 Ciss, Coss, Crss -- VDS 100 VDD=15V VGS=4V 10 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 3 Switching Time, SW Time -- ns 3 --25° C Ta= 5 5°C 5 °C --25 Ta= 7 7 7 25°C 1.0 Drain Current, ID -- A 2 10 Coss 7 Crss 5 3 3 2 2 0.1 1.0 2 5 3 7 Drain Current, ID -- A 0 1.0 IT07516 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2.5 2.0 1.5 1.0 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Total Gate Charge, Qg -- nC 25 30 IT08960 RDS(on) -- ID Ta=75°C 25°C --25°C 7 5 3 5 7 0.1 2 Drain Current, ID -- A 3 Ta=75°C 25°C --25°C 7 5 2 3 5 7 1.0 IT07520 5 7 2 0.1 Drain Current, ID -- A 3 5 7 1.0 IT07519 RDS(on) -- ID 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2 1.0 1.0 IT07518 VGS=2.5V 2 20 2 3 0.01 1.0 RDS(on) -- ID 3 3 0.01 15 VGS=4V 3.0 0 10 3 VDS=10V ID=0.35A 3.5 5 Drain-to-Source Voltage, VDS -- V VGS -- Qg 4.0 Gate-to-Source Voltage, VGS -- V VGS=0 2 2 5 0.01 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω IF -- VSD 3 VDS=10V Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 3 VGS=1.5V 5 3 Ta=75°C 2 --25°C 25°C 1.0 7 5 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 IT07521 No.8231-3/4 3LN03SS PD -- Ta Allowable Power Dissipation, PD -- W 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07522 Note on usage : Since the 3LN03SS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.8231-4/4