SANYO 3LN03SS

3LN03SS
Ordering number : ENN8231
N-Channel Silicon MOSFET
3LN03SS
General-Purpose Switching Device
Applications
Features
•
•
•
•
Low ON-resistance.
High-speed switching.
2.5V drive.
High ESD Voltage (TYP 300V)
[Built-in one side diode for protection between Gate-to-Source].
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage (*1)
VGSS
10
V
Drain Current (DC)
ID
Drain Current (Pulse)
PW≤10µs, duty cycle≤1%
0.35
A
1.4
A
Allowable Power Dissipation
IDP
PD
0.15
A
Channel Temperature
Tch
150
A
Storage Temperature
Tstg
--55 to +150
W
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0
VDS=30V, VGS=0
Forward Transfer Admittance
VGS(off)
yfs
VGS=8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=180mA
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=180mA, VGS=4V
ID=90mA, VGS=2.5V
Input Capacitance
RDS(on)3
Ciss
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
Cutoff Voltage
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Ratings
min
typ
Unit
max
30
V
µA
1
µA
1.3
V
0.7
0.9
Ω
0.8
1.15
Ω
1.6
2.4
0.4
0.36
1
0.6
S
30
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Marking : YG
Ω
pF
7
pF
3.5
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22805PE TS IM TA-100963 No.8231-1/4
3LN03SS
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Turn-ON Delay Time
td(on)
See specified Test Circuit.
8
ns
Rise Time
tr
td(off)
See specified Test Circuit.
4.5
ns
See specified Test Circuit.
11
ns
tf
See specified Test Circuit.
6
ns
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=350mA
1
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=350mA
0.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=350mA
Diode Forward Voltage
VSD
IS=350mA, VGS=0
0.2
nC
0.88
Package Dimensions
1.2
V
Switching Time Test Circuit
unit : mm
2179A
VDD=15V
VIN
Top View
1.4
4V
0V
0.3
Side View
0.25
ID=180mA
RL=83Ω
VIN
0.1
D
2
G
0.3
1
0.45
0.07
1
2
3LN03SS
1 : Gate
2 : Source
3 : Drain
0.6
3
P.G
ID -- VGS
0.8
V
25°
C
5°C
--25
°C
0.4
0.2
25°
C
0.1
0.6
VDS=10V
Ta=
7
VGS=1.5V
0.2
Drain Current, ID -- A
2.0
2.5
V
Ta=
--25
°C
V
3.0
4.
6.0V 0V 3.5V
Drain Current, ID -- A
0.3
S
SANYO : SSFP
ID -- VDS
0.4
50Ω
75°
C
Side View
0.07
Bottom View
0.2
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
0.9
0
1.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
3.0
ID=90mA
180mA
1.0
0
1.0
2.0
3.0
4.0
5.0
6.0
Gate-to-Source Voltage, VGS -- V
7.0
8.0
IT07512
1.5
2.0
2.5
3.0
3.5
IT07511
RDS(on) -- Ta
1.6
4.0
0
1.0
Gate-to-Source Voltage, VGS -- V
Ta=25°C
2.0
0.5
IT07510
RDS(on) -- VGS
5.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
VOUT
PW=10µs
D.C.≤1%
1.4
0.8
3
1.4
1.2
=2.5V
, VGS
1.0
0mA
I D=9
0.8
=4.0V
A, V GS
0m
I D=18
0.6
0.4
0.2
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
IT08161
No.8231-2/4
3LN03SS
yfs -- ID
1.0
75
3
2
25
°C
°C
2
0.1
7
5
3
0.1
2
7
2
3
5
7
2
0.1
3
5
0.01
0.2
7
1.0
IT07514
td(off)
td(on)
tf
7
tr
5
0.8
1.0
1.2
1.4
IT07515
7
5
Ciss
3
Ciss, Coss, Crss -- pF
2
0.6
Ciss, Coss, Crss -- VDS
100
VDD=15V
VGS=4V
10
0.4
Diode Forward Voltage, VSD -- V
SW Time -- ID
3
Switching Time, SW Time -- ns
3
--25°
C
Ta=
5
5°C
5
°C
--25
Ta=
7
7
7
25°C
1.0
Drain Current, ID -- A
2
10
Coss
7
Crss
5
3
3
2
2
0.1
1.0
2
5
3
7
Drain Current, ID -- A
0
1.0
IT07516
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
2.5
2.0
1.5
1.0
0.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Total Gate Charge, Qg -- nC
25
30
IT08960
RDS(on) -- ID
Ta=75°C
25°C
--25°C
7
5
3
5
7
0.1
2
Drain Current, ID -- A
3
Ta=75°C
25°C
--25°C
7
5
2
3
5
7
1.0
IT07520
5
7
2
0.1
Drain Current, ID -- A
3
5
7 1.0
IT07519
RDS(on) -- ID
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
2
1.0
1.0
IT07518
VGS=2.5V
2
20
2
3
0.01
1.0
RDS(on) -- ID
3
3
0.01
15
VGS=4V
3.0
0
10
3
VDS=10V
ID=0.35A
3.5
5
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
4.0
Gate-to-Source Voltage, VGS -- V
VGS=0
2
2
5
0.01
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
IF -- VSD
3
VDS=10V
Forward Current, IF -- A
Forward Transfer Admittance, yfs -- S
3
VGS=1.5V
5
3
Ta=75°C
2
--25°C
25°C
1.0
7
5
0.01
2
3
5
7
0.1
Drain Current, ID -- A
2
3
IT07521
No.8231-3/4
3LN03SS
PD -- Ta
Allowable Power Dissipation, PD -- W
0.20
0.15
0.10
0.05
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT07522
Note on usage : Since the 3LN03SS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2005. Specifications and information herein are subject
to change without notice.
PS No.8231-4/4