DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE 2SK3385 TO-251 2SK3385-Z TO-252 • Low On-state Resistance ★ RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 45 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 1500 pF TYP. • Built-in Gate Protection Diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±30 A ID(pulse) ±100 A Note1 ★ Drain Current (Pulse) ★ Total Power Dissipation (TC = 25°C) PT 36 W Total Power Dissipation (TA = 25°C) PT 1.0 W Channel Temperature Tch 150 °C Storage Temperature ★ ★ Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 22 A Single Avalanche Energy Note2 EAS 48 mJ (TO-252) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE ★ Channel to Case Rth(ch-C) 3.47 °C/W Channel to Ambient Rth(ch-A) 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14472EJ1V0DS00 (1st edition) Date Published January 2000 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999,2000 2SK3385 ★ ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 15 A 22 28 mΩ RDS(on)2 VGS = 4.0 V, ID = 15 A 31 45 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 15 A 8 16 Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 1500 pF Output Capacitance Coss VGS = 0 V 250 pF Reverse Transfer Capacitance Crss f = 1 MHz 130 pF Turn-on Delay Time td(on) ID = 15 A 22 ns VGS(on) = 10 V 250 ns td(off) VDD = 30 V 77 ns tf RG = 10 Ω 77 ns Total Gate Charge QG ID = 30 A 30 nC Gate to Source Charge QGS VDD = 48 V 4.8 nC Gate to Drain Charge QGD VGS(on) = 10 V 8.6 nC VF(S-D) IF = 30 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 30 A, VGS = 0 V 44 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 79 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY S TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90 % ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10 % 0 10 % Wave Form τ VDD PG. 90 % BVDSS VDS ID 90 % VDD ID IAS VGS(on) 10 % Data Sheet D14472EJ1V0DS00 tr td(off) td(on) ton tf toff 2SK3385 PACKAGE DRAWINGS (Unit : mm) 1) TO-251 (MP-3) 2) TO-252 (MP-3Z) 1.1±0.2 +0.2 +0.2 0.5-0.1 0.5-0.1 0.75 2.3 2.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 +0.2 2.3±0.2 1.0 MIN. 1.8 TYP. 0.5±0.1 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 0.8 4.3 MAX. 1.1±0.2 1.5-0.1 +0.2 13.7 MIN. 3 7.0 MAX. 2 5.5±0.2 1.6±0.2 1 4 5.5±0.2 10.0 MAX. 6.5±0.2 5.0±0.2 0.5±0.1 4 2.0 MIN. 5.0±0.2 2.3±0.2 1.5-0.1 6.5±0.2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D14472EJ1V0DS00 3 2SK3385 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8