PIN Photodiodes Part number notation The part number noten on the following pages is a conventional part number. The new Matsushita global number is: PNZ312DN PIN Photodiodes PN312D(N) Silicon PIN Dual Photodiode Unit : mm 1.0±0.2 ø3.2 Dep. 0.1(typ.) 10˚ 1.0±0.1 For optical information systems Features 1.8±0.3 5.0±0.1 2.54±0.1 4 3 Low dark current : ID = 20 nA (max.) Small size plastic package (flat type) B A 1.0 Good photo current linearity 10˚ 13.5±1.0 4.0±0.1 1.0±0.3 Fast response : tr, tf = 10 ns (typ.) 1.0 4-0.6 +0.1 –0.2 0.2 +0.1 –0.05 Adoption of visible light cutoff resin 4-0.5±0.1 1 10˚ 0.6 2 10˚ 0.2 Applications 5˚ Auto focus sensor for still cameras and video cameras etc. 5˚ 1: Anode A 2: Common Cathode 3: Anode B 4: Common Cathode Distance measuring systems Position sensor for automatic assembly lines Note) The PN312D(N) package consists of a visible light cutoff resin. Therefore the chips (A and B) shown in the drawing cannot actually be seen. Eye sensor for industrial robots Dimensions of detection area Parameter Reverse voltage (DC) Symbol Ratings Unit VR 30 V Power dissipation PD 30 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Unit : mm 3.5 1.6 1.6 0.04 A B 1.35 1.0 Absolute Maximum Ratings (Ta = 25˚C) Electro-Optical Characteristics (Ta = 25˚C) Parameter Reverse voltage (DC) Symbol Conditions VR IR = 10µA Dark current ID VR = 10V Photo current IL*3 VR = 10V, L = 1000 lx*1 λP Peak sensitivity wavelength min typ max Unit 30 V 20 8 nA 12 µA VR = 10V 940 nm tr, tf*2 VR = 10V, RL = 1kΩ 10 ns Capacitance between pins Ct VR = 10V, f = 1MHz 5 pF Acceptance half angle θ Measured from the optical axis to the half power point 65 deg. Response time Note) The indicated values for absolute maximum ratings and electro-optical characteristics are the values corresponding to individual elements. *1 Measurements were made using a white tungsten lamp (color temperature T = 2856K) as a light source. *2 Semiconductor laser light source ( λ = 800 nm ) *3 Photo current measurement circuit +10V R1 = R2 R2 ,, ,,, R1 1 PIN Photodiodes PN312D(N) PD — Ta IL — L 20 10 VR = 10V Ta = 25˚C T = 2856K VR = 10V L = 1000 lx T = 2856K 140 10 2 Relative photo current IL (µA) Photo current PD (mW) Power dissipation 30 IL — Ta 160 IL (%) 10 3 40 10 1 120 100 80 60 40 20 0 – 25 0 20 40 60 Ambient temperature 80 10 –1 10 100 10 2 Ta (˚C ) Illuminance L (lx) 10 –1 20 40 60 80 100 Ta (˚C ) Spectral sensitivity characteristics 100 VR = 10V 1 Relative sensitivity Dark current ID (nA) Ta = 25˚C 0 Ambient temperature S (%) 10 ID (nA) Dark current 0 – 40 – 20 10 4 ID — Ta ID — VR 1 10 3 10 –1 VR = 10V Ta = 25˚C 80 60 40 20 4 8 12 16 Reverse voltage 20 24 28 10 –2 – 40 – 20 32 VR (V) 60 60 40 80 40 0 40 Angle θ (deg.) 80 80 0 200 100 400 Ta (˚C ) 800 Sig.IN 10 1 1 Reverse voltage 1000 1200 λ (nm) tr , tf — RL 10 4 f = 1MHz Ta = 25˚C 10 2 10 –1 10 –1 600 Wavelength VR=10V Sig. OUT RL ,, , Ct (pF) 80 Capacitance between pins S (%) Relative sensitivity 40 10 3 20 2 20 Ct — VR Directivity characteristics 100 0 0 Ambient temperature tr , tf (ns) 0 Rise time, Fall time 10 –2 10 VR (V) 10 2 10 3 50Ω tr 90% 10% td tf 10 2 10 1 10 –1 Ta = 25˚C 1 10 External load resistance 10 2 RL (kΩ) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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