Transistors MOSFET IC SMD Type Product specification 2SK3571 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) Built-in gate protection diode +0.2 2.54-0.2 +0.2 15.25-0.2 MAX. (VGS = 10 V, ID = 24 A) +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 RDS(on)1 = 9m +0.2 8.7-0.2 Low on-state resistance, 5.60 4.5V drive available. 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain Surface mount device available 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 20 Gate to source voltage VGSS 20 V ID 48 A 192 A Drain current Idp * Power dissipation TC=25 40 PD V W 1.5 TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Symbol Testconditons IDSS VDS=20V,VGS=0 Min Typ Max Unit 10 IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 11 A 10 2.5 A V Yfs VDS=10V,ID=24A RDS(on)1 VGS=10V,ID=24A 7.0 9.0 m RDS(on)2 VGS=4.5V,ID=18A 10 16 m Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance S 1100 pF 450 pF Crss 160 pF VDS=10V,VGS=0,f=1MHZ Turn-on delay time ton 13 ns Rise time tr 5 ns Turn-off delay time toff 40 ns Fall time ID=24A,VGS(on)=10V,RG=10 ,VDD=10V tf 9 ns Total Gate Charge QG 21 nC Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com VDD = 16 V VGS = 10 V ID = 48 A [email protected] 4.2 nC 5 nC 4008-318-123 1 of 1