DATA SHEET PHOTOCOUPLERS PS2503 -1, -2, -4 PS2503L-1, -2, -4 LOW INPUT CURRENT, HIGH SPEED SWITCHING MULTI PHOTOCOUPLER SERIES DESCRIPTION PS2503-1, -2, -4 and PS2503L-1, -2, -4 series are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. PS2503-1, -2, -4 are in a plastic DIP (Dual In-line Package) and PS2503L-1, -2, -4 are lead bending type (Gullwing) for surface mount. FEATURES • High isolation voltage (BV: 5 000 Vr.m.s. MIN.) • High speed switching (tr = 20 µs, tf = 30 µs TYP., @RL = 10 kΩ) • High current transfer ratio (CTR: 100 % MIN. @IF = 1 mA, VCE = 5 V) • Taping Product number (PS2503L-1-E3, E4, F3, F4) (PS2503L-2-E3, E4) • UL recognized [File No. E72422(S)] APPLICATIONS Interface circuit for various instrumentations, control equipments. • AC Line/Digital Logic .................................................. Isolate high voltage transients • Digital Logic/Digital Logic ........................................... Eliminate spurious ground loops • Twisted pair line receiver ........................................... Eliminate ground look pick-up • Telephone/Telegraph line receiver ............................ Isolate high voltage transients • High Frequeny Power Supply Feedback Control ...... Maintain floating ground • Relay Contact Monitor ................................................ Isolate floating grounds and transients • Power Supply Monitor ................................................ Isolate transients and ground systems Document No. P11304EJ3V0DS00 (3rd edition) (Previous No. LC-2305A) Date Published February 1996 P Printed in Japan © 1993 PS2503-1, -2, -4, PS2503L-1, -2, -4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) (PS2503-1) (PS2503-2, 4) (PS2503L-1) (PS2503L-2, 4) Diode Reverse Voltage VR 6 6 V Forward Current (DC) IF 80 80 mA Power Dissipation Derating ∆PD/˚C 1.5 1.2 mW/˚C Power Dissipation PD 150 120 mW/Channel Peak Forward Current IF(Peak) 1 1 A VCEO 40 40 V (PW = 100 µs, Duty Cycle 1 %) Transistor Collector to Emitter Voltage Emitter to Collector Voltage VECO 0.6 0.6 V Collector Current IC 30 30 mA Power Dissipation Derating ∆PC/˚C 1.5 1.2 mW/˚C Power Dissipation PC 150 120 mW/Channel Isolation Voltage*1 BV 5 000 5 000 Vr.m.s. Coupled Storage Temperature Tstg –55 to +150 –55 to +150 °C Operating Temperature Topt –55 to +100 –55 to +100 °C Lead Temperature (Soldering 10 s) Tsol 260 260 °C *1 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output. ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Diode Transistor Coupled SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS 1.1 1.3 V IF = 1 mA 5 µA VR = 5 V pF V = 0, f = 1 MHz 100 nA VCE = 40 V, IF = 0 400 % IF = 1 mA, VCE = 5 V 0.25 V IF = 1 mA, IC = 0.2 mA Ω Vin-out = 1 kV Forward Voltage VF Reverse Current IR Junction Capacitance Ct Collector to Emitter Dark Current ICEO Current Transfer Ratio*2 CTR Collector Saturation Voltage VCE(sat) Isolation Resistance R1-2 Isolation Capacitance C1-2 0.5 pF V = 0, f = 1 MHz tr 20 µs VCC = 5 V, IF = 1 mA, RL = 10 kΩ tf 30 µs VCC = 5 V, IF = 1 mA, RL = 10 kΩ Rise Fall Time*3 Time*3 *2 CTR rank (only PS2503-1, PS2503L-1) 50 100 200 1011 *3 Test Circuit for Switching Time K : 200 to 400 L : 150 to 300 M : 100 to 200 VCC PULSE INPUT PW = 100 µ s Duty Cycle = 1/10 IF VOUT 50 Ω 2 RL = 10 kΩ PS2503-1, -2, -4, PS2503L-1, -2, -4 TYPICAL CHARACTERISTICS (TA = 25 °C) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 PC - Transistor Power Dissipation - mW PD - Diode Power Dissipation - mW 150 PS2503-1 PS2503L-1 100 1.5 mW / °C PS2503-2 PS2503-4 PS2503L-2 PS2503L-4 50 1.2 mW / °C 0 25 50 75 100 125 150 PS2503-1 PS2503L-1 100 1.5 mW / °C PS2503-2 PS2503-4 PS2503L-2 PS2503L-4 50 1.2 mW / °C 0 25 TA - Ambient Temperature - ˚C 50 75 100 125 TA - Ambient Temperature - ˚C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE FORWARD CURRENT vs. FORWARD VOLTAGE 12 100 50 10 4 mA IC - Collector Current - mA IF - Forward Current - mA 5 mA 100 °C 60 °C 25 °C 0 °C –25 °C –55 °C 10 5 1 0.5 8 3 mA 2 mA 6 1.5 mA 4 1 mA 0.8 mA IF = 0.6 mA 2 0.1 0.7 0.8 0.9 1.0 1.1 1.2 150 1.3 1.4 1.5 0 VF - Forward Voltage - V 2 4 6 8 10 VCE - Collector to Emitter Voltage - V COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 100 30 10 VCE = 40 V 30 V 20 V 10 V 10 IC - Collector Current - mA ICEO - Collector to Emitter Dark Current - nA 10 mA 50 5.0 5 mA 5 2 mA 1 mA IF = 0.8 mA 1.0 0.5 1.0 0.3 0.1 –25 0 25 50 75 TA - Ambient Temperature - ˚C 100 0 0.2 0.4 0.6 0.8 1.0 VCE(sat) - Collector tSaturation Voltage - V 3 PS2503-1, -2, -4, PS2503L-1, -2, -4 CURRENT TRANSFER RATIO (CTR) vs. FORWARD CURRENT 400 NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE Normalized to 1.0 at TA = 25 °C IF = 1 mA, V CE = 5 V CTR - Normalized Output current CTR - Current Transfer Ratio - % 1.4 300 200 100 1.2 1.0 0.8 0.6 0.4 0.2 0 0.3 0.5 0 5 1 100 50 10 30 0 500 td tf IF = 1 mA, VCC = 5 V Sample : CTR 209 % at IF = 1 mA IF VCC 1 ts 0.5 t - Switching Time - µ s t - Switching Time - µs 100 5 ts tr 10 5 5 k 10 k 1 50 k 100 k FREQUENCY 5.6 k 1k 100 12.0 15.0 1k –25 0 25 10 k f - Frequency - Hz 75 100 100 k 1M TYP. 1.0 0.8 IF = 5 mA TA = 25 °C IF = 5 mA TA = 60 °C 0.6 0.4 0.2 0 102 103 Time - Hr 4 50 1.2 CTR - Normalized 3.0 9.0 –50 LONG TERM CTR DEGRADATION VCC = 5 V Sample CTR = 209 % 6.0 td TA - Ambient Temperature - ˚C RL - Load Resistance - Ω 0 tf RL 0.1 500 1 k 50 VO 50 Ω 100 100 Sample CTR = 290 % VCC = 5 V IF = 1 mA RL = 10 kW tr 10 75 SWITCHING TIME vs. AMBIENT TEMPERATURE SWITCHING TIME vs. LOAD RESISTANCE 50 AV - Relative Voltage Gain - dB 50 TA - Ambient Temperature - ˚C IF - Forward Current - mA 100 25 104 105 PS2503-1, -2, -4, PS2503L-1, -2, -4 SOLDERING PRECAUTION (1) Infrared reflow soldering • Peak reflow temperature : 235 °C or below (Plastic surface temperature) • Reflow time : 30 seconds or less (Time period during which the plastic surface temperature is 210 °C) • Number of reflow processes : Three • Flux : Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) PACKAGE’S SURFACE TEMPERATURE (oC) REFLOW TEMPERATURE PROFILE (ACTUAL HEAT) to 10 s 235 oC MAX 210 oC to 30 s 120 to 160 oC 60 to 90 s (PRE-HEAT) TIME (s) Peak Temperature 235 °C or Lower (2) Dip soldering • Peak temperature : 260 °C or lower • Time : 10 s or less • Flux : Rosin-base flux 5 PS2503-1, -2, -4, PS2503L-1, -2, -4 • 4 Pin DIP Type (Lead bending; –1 channel) Taping 1. TAPING DIRECTION PS2503L-1-E3, F3 PS2503L-1-E4, F4 NEC 2503 • KD201 NEC 2503 • KD201 NEC 2503 • KD201 NEC 2503 • KD201 NEC 2503 • KD201 NEC 2503 • KD201 2. OUTLINE AND DIMENSIONS (;TAPE) Unit: mm P0 T0 D0 SYMBOL A B D0 D1 E F P1 P0 P2 T0 T1 W B W F E P2 T1 D1 P1 A RATINGS 5.6 ± 0.1 10.3 ± 0.1 1.55 ± 0.1 1.55 ± 0.1 1.75 ± 0.1 7.5 ± 0.1 8 ± 0.1 4 ± 0.1 2 ± 0.1 4.3 ± 0.2 0.3 16 ± 0.3 3. OUTLINE AND DIMENSIONS (;REEL) 2 ±0.5 Unit: mm W A φ18.0 ±0.5 φ 21 ±0.8 R1.0 4. PACKING E3, E4; 1000 pieces/reel F3, F4; 2000 pieces/reel 6 SYMBOL A N W RATINGS E3, E4 F3, F4 250 330 80 ± 5.0 16.4 +2.0 –0 PS2503-1, -2, -4, PS2503L-1, -2, -4 • 8 Pin DIP Type (Lead bending; –2 channel) Taping 1. TAPING DIRECTION PS2503L-2-E3 PS2503L-2-E4 NEC JAPAN PS2503-2 •ND101 NEC JA PS2503 •ND1 •ND101 APAN 03-2 101 NEC JAPAN PS2503-2 2. OUTLINE AND DIMENSIONS (;TAPE) Unit: mm P0 T0 D1 B W F E P2 D0 T1 P1 A SYMBOL A RATINGS 10.7 ± 0.1 B D0 D1 E F P0 P1 P2 T0 T1 W 10.3 ± 0.1 1.55 ± 0.1 1.55 ± 0.1 1.75 ± 0.1 7.5 ± 0.1 4.0 ± 0.1 12.0 ± 0.1 2.0 ± 0.1 4.3 ± 0.2 0.3 16 ± 0.3 3. OUTLINE AND DIMENSIONS (;REEL) Unit: mm 2 ±0.5 W A φ18.0 ±0.5 SYMBOL A N W RATINGS 330 80 ± 5.0 +2.0 16.4 –0 φ21 ±0.8 R1.0 4. PACKING; 1000 pieces/reel 7 PS2503-1, -2, -4, PS2503L-1, -2, -4 PACKAGE DIMENSIONS (Unit: mm) DIP (Dual In-line Package) PS2503-1 PS2503-2 4 3 8 7 6 5 5.1 MAX. 10.2 MAX. 1 2 3 4 6.5 3.8 MAX. 2.8 4.55 MIN. MAX. 7.62 0.50 ± 0.10 0.25 M 1.34 1,3. Anode 2,4. Cathode 5,7. Emitter 6,8. Collector 0 to 15° 2.54 7.62 0.65 2.54 0.65 2.8 4.55 MIN. MAX. 3.8 MAX. 6.5 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 0.50 ± 0.10 0.25 M 1.34 0 to 15° PS2503-4 16 15 14 13 12 11 10 9 20.3 MAX. 2.54 1, 3, 5, 7. 2, 4, 6, 8. 9,11,13,15. 10,12,14,16. 7.62 Anode Cathode Emitter Collector 0.65 2.8 4.55 MIN. MAX. 3.8 MAX. 6.5 1 2 3 4 5 6 7 8 0.50 ± 0.10 1.34 0.25 M 0 to 15° PACKAGE DIMENSIONS (Unit: mm) Lead Bending type (Gull-wing) PS2503L-2 4 3 5.1 MAX. 10.2 MAX. 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 0.05 to 0.2 7.62 6.5 9.60 ± 0.4 1.34 ± 0.10 0.25 1 2 3 4 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 2.54 7.62 6.5 3.8 MAX. 3.8 MAX. 2.54 8 7 6 5 0.9 ± 0.25 0.05 to 0.2 PS2503L-1 9.60 ± 0.4 M 1.34 ± 0.10 0.25 M PS2503L-4 16 15 14 13 12 11 10 9 20.3 MAX. 1 2 3 4 5 6 7 8 1.34 ± 0.10 8 0.25 M 9.60 ± 0.4 0.05 to 0.2 7.62 6.5 3.8 MAX. 2.54 1, 3, 5, 7. 2, 4, 6, 8. 9,11,13,15. 10,12,14,16. 0.9 ± 0.25 Anode Cathode Emitter Collector 0.9 ± 0.25 PS2503-1, -2, -4, PS2503L-1, -2, -4 [MEMO] 9 PS2503-1, -2, -4, PS2503L-1, -2, -4 Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Galium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2