DATA SHEET PHOTOCOUPLER PS2505-1,-2,-4, PS2505L-1,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SERIES −NEPOC TM Series− DESCRIPTION The PS2505-1, -2, -4 and PS2505L-1, -2, -4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor. The PS2505-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2505L-1, -2, -4 are lead bending type (Gull-wing) for surface mount. FEATURES • AC input response • High isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.) • Ordering number of taping product: PS2505L-1-E3, E4, F3, F4, PS2505L-2-E3, E4 • UL approved: File No. E72422 (S) APPLICATIONS • Power supply • Telephone/FAX. • FA/OA equipment • Programmable logic controller The information in this document is subject to change without notice. Document No. P10958EJ6V0DS00 (6th edition) Date Published April 1998 NS CP(K) Printed in Japan The mark • shows major revised points. © 1988 PS2505-1,-2,-4,PS2505L-1,-2,-4 PACKAGE DIMENSIONS (in millimeters) DIP Type PS2505-4 (New Package) PS2505-1 (New Package) TOP VIEW TOP VIEW 4 3 16 15 14 13 1211 10 9 4.6 ± 0.35 20.3 MAX. 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode, Cathode 2, 4, 6, 8. Cathode, Anode 9,11,13,15. Emitter 10,12,14,16. Collector 6.5 6.5 1 2 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 1.25±0.15 0.50 ± 0.10 0.25 M 0 to 15˚ 3.8 MAX. 0.65 2.8 4.55 MIN. MAX. 3.8 MAX. 7.62 0.65 2.8 4.55 MIN. MAX. 7.62 0.50 ± 0.10 0.25 M 1.25±0.15 0 to 15˚ 2.54 2.54 PS2505-1 PS2505-2 TOP VIEW TOP VIEW 4 3 8 7 6 5 10.2 MAX. 5.1 MAX. 1 2 3 4 1, 3. Anode, Cathode 2, 4. Cathode, Anode 5, 7. Emitter 6, 8. Collector 6.5 6.5 1 2 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 1.25±0.15 0.50 ± 0.10 0.25 M 3.8 MAX. 0.65 2.8 4.55 MIN. MAX. 3.8 MAX. 7.62 0.65 2.8 4.55 MIN. MAX. 7.62 0.50 ± 0.10 0.25 M 1.25±0.15 0 to 15˚ 2.54 0 to 15˚ 2.54 TOP VIEW PS2505-4 16 15 14 13 12 11 10 9 6.5 20.3 MAX. 3.8 MAX. 0.65 2.8 4.55 MIN. MAX. 7.62 0.50 ± 0.10 0.25 M 1.25±0.15 2.54 Caution New package 1-ch, 4-ch only 2 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode, Cathode 2, 4, 6, 8. Cathode, Anode 9,11,13,15. Emitter 10,12,14,16. Collector 0 to 15˚ PS2505-1,-2,-4,PS2505L-1,-2,-4 Lead Bending Type PS2505L-4 (New Package) PS2505L-1 (New Package) TOP VIEW TOP VIEW 4 3 16 15 14 13 1211 10 9 4.6 ± 0.35 20.3 MAX. 0.90 ± 0.25 6.5 7.62 0.90 ± 0.25 1.25±0.15 0.25 M 9.60 ± 0.4 9.60 ± 0.4 2.54 2.54 PS2505L-1 PS2505L-2 TOP VIEW TOP VIEW 4 3 8 7 6 5 10.2 MAX. 5.1 MAX. 7.62 3.8 MAX. 3.8 MAX. 7.62 0.90 ± 0.25 1.25±0.15 0.25 M 1 2 3 4 1, 3. Anode, Cathode 2, 4. Cathode, Anode 5, 7. Emitter 6, 8. Collector 6.5 0.05 to 0.2 6.5 1 2 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 0.90 ± 0.25 1.25±0.15 0.25 M 9.60 ± 0.4 2.54 0.05 to 0.2 1.25±0.15 0.25 M 0.05 to 0.2 3.8 MAX. 7.62 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode, Cathode 2, 4, 6, 8. Cathode, Anode 9,11,13,15. Emitter 10,12,14,16. Collector 3.8 MAX. 0.05 to 0.2 6.5 1 2 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 9.60 ± 0.4 2.54 PS2505L-4 TOP VIEW 16 15 14 13 12 11 10 9 20.3 MAX. 3.8 MAX. 7.62 0.05 to 0.2 6.5 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode, Cathode 2, 4, 6, 8. Cathode, Anode 9,11,13,15. Emitter 10,12,14,16. Collector 0.90 ± 0.25 1.25±0.15 0.25 M 9.60 ± 0.4 2.54 Caution New package 1-ch, 4-ch only 3 PS2505-1,-2,-4,PS2505L-1,-2,-4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Ratings Parameter Diode Symbol Forward Current (DC) PS2505-2,-4 PS2505L-2,-4 ±80 IF Power Dissipation Derating Unit mA ∆PD/°C 1.5 1.2 mW/°C PD 150 120 mW/ch Power Dissipation *1 IFP ±1 A Collector to Emitter Voltage VCEO 80 V Emitter to Collector Voltage VECO 7 V IC 50 mA/ch Peak Forward Current Transistor PS2505-1, PS2505L-1 Collector Current Power Dissipation Derating ∆PC/°C 1.5 1.2 mW/°C PC 150 120 mW/ch Power Dissipation *2 Isolation Voltage BV 5 000 Vr.m.s. Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions MIN. Unit 1.4 V VF IF = ±10 mA 1.17 Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 100 Collector to Emitter Dark Current ICEO VCE = 80 V, IF = 0 mA Coupled Current Transfer Ratio (IC/IF) CTR IF = ±5 mA, VCE = 5 V 80 CTR Ratio CTR1/ CTR2 IF = 5 mA, VCE = 5 V 0.3 Collector Saturation Voltage VCE (sat) IF = ±10 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz *1 Rise Time Fall Time *2 tr *2 nA 300 600 % 1.0 3.0 0.3 Ω 11 10 0.5 pF 3 µs VCC = 10 V, IC = 2 mA, RL = 100 Ω 5 VCE Pulse Input IF VCC PW = 100 µs Duty Cycle = 1/10 50 Ω 4 V *2 Test circuit for switching time IC1 IC2 pF 100 tf *1 CTR1 = IC1/IF1, CTR2 = IC2/IF2 IF2 MAX. Forward Voltage Transistor IF1 TYP. VOUT RL = 100 Ω PS2505-1,-2,-4,PS2505L-1,-2,-4 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 PS2505-1 PS2505L-1 100 PS2505-2 PS2505L-2 PS2505-4 PS2505L-4 1.5 mW/˚C 50 1.2 mW/˚C 0 25 50 75 100 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 125 150 PS2505-1 PS2505L-1 100 PS2505-2 PS2505L-2 PS2505-4 PS2505L-4 50 1.2 mW/˚C 0 150 25 100 125 150 FORWARD CURRENT vs. FORWARD VOLTAGE FORWARD CURRENT vs. FORWARD VOLTAGE 100 80 50 60 TA = +100 ˚C +60 ˚C +25 ˚C Forward Current IF (mA) Forward Current IF (mA) 75 50 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) 10 5 0 ˚C –25 ˚C –55 ˚C 1 0.5 40 20 0 –20 –40 –60 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 –80 1.5 –1.5 –1.0 –0.5 0 0.5 1.0 1.5 Forward Voltage VF (V) Forward Voltage VF (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 40 50 mA 20 mA 10 mA 10 000 VCE = 80 V 40 V 24 V 10 V 5V 1 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 1.5 mW/˚C 100 10 1 – 50 –25 0 25 50 Ambient Temperature TA (˚C) 75 100 10 5 mA 5 2 mA IF = 1 mA 1 0.5 0.1 0 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE(sat) (V) 5 PS2505-1,-2,-4,PS2505L-1,-2,-4 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Normalized Current Transfer Ratio CTR 70 Collector Current IC (mA) 60 50 40 50 30 mA 20 mA A m 10 20 IF = 5 mA 10 0 4 2 8 6 10 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 0.2 0 –50 –25 0 25 50 75 Collector to Emitter Voltage VCE (V) Ambient Temperature TA (˚C) CURRENT TRANSFER RATIO vs. FORWARD CURRENT SWITCHING TIME vs. LOAD RESISTANCE 1 000 450 350 300 250 200 150 100 ts 100 10 tr 50 0 100 tf IF = 5 mA, VCC = 5 V, CTR = 290 % 400 Switching Time t ( µ s) Current Transfer Ratio CTR (%) ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 1.0,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 0.8,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 0.6 1.2 0.05 0.1 0.5 1 5 10 1 100 50 td 500 1 k Forward Current IF (mA) 5 k 10 k 50 k 100 k Load Resistance RL (Ω) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 50 tf tr IF = 5 mA, VCE = 5 V 0 10 Normalized Gain GV Switching Time t ( µ s) IC = 2 mA, VCC = 10 V, CTR = 290 % td ts 1 –5 –10 100 Ω –15 RL = 1 kΩ –20 0.1 10 300 Ω 50 100 500 1 k Load Resistance RL (Ω) 6 5 k 10 k 0.5 1 2 5 10 20 50 100 200 500 Frequency f (kHz) PS2505-1,-2,-4,PS2505L-1,-2,-4 LONG TERM CTR DEGRADATION 1.2 IF = 5 mA (TYP.) CTR (Relative Value) 1.0 0.8 TA = 25 ˚C 0.6 TA = 60 ˚C 0.4 0.2 0 102 103 104 105 Time (Hr) Remark The graphs indicate nominal characteristics. 7 PS2505-1,-2,-4,PS2505L-1,-2,-4 TAPING SPECIFICATIONS (in millimeters) 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 1.55±0.1 5.6±0.1 8.0±0.1 Tape Direction PS2505L-1-E3 PS2505L-1-F3 PS2505L-1-E4 PS2505L-1-F4 R 1.0 φ 21.0±0.8 φ 80.0±5.0 2.0±0.5 φ 13.0±0.5 PS2505L-1-E3, E4: φ 250 PS2505L-1-F3, F4: φ 330 Outline and Dimensions (Reel) 16.4 +2.0 –0.0 Packing: PS2505L-1-E3, E4 1 000 pcs/reel PS2505L-1-F3, F4 2 000 pcs/reel 8 PS2505-1,-2,-4,PS2505L-1,-2,-4 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 10.4±0.1 1.55±0.1 12.0±0.1 Tape Direction PS2505L-2-E3 PS2505L-2-E4 Outline and Dimensions (Reel) φ 21.0±0.8 φ 80.0±5.0 R 1.0 φ 330 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel 9 PS2505-1,-2,-4,PS2505L-1,-2,-4 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Caution Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process. Peak temperature 235 ˚C or below (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 10 PS2505-1,-2,-4,PS2505L-1,-2,-4 [MEMO] 11 PS2505-1,-2,-4,PS2505L-1,-2,-4 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5