e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 45 Watts, 1.8–2.0 GHz Class AB Characteristics 45% Collector Efficiency at 45 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 70 60 50 2023 0 40 LOT COD E 30 VCC = 26 V 20 ICQ = 250 mA f = 2.0 GHz 10 0 0 2 4 6 8 10 Input Power (Watts) Package 20234 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 55 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 7.7 Adc Total Device Dissipation at Tflange = 25° C PD 200 Watts 1.2 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70° C) RθJC 0.85 °C/W 1 9/28/98 e PTB 20230 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 — — Volts Breakdown Voltage C to E IB = 0 A, IC = 100 mA, RBE = 22 Ω V(BR)CER 55 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4.0 5.0 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 40 — — Symbol Min Typ Max Units Gpe 8.5 9.5 — dB P-1dB 45 — — Watts Input Return Loss (VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA, f = 2 GHz) Rtn Loss 10 — — dB Collector Efficiency (VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA, f = 2 GHz) ηC 45 50 — % Ψ — — 3:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA, f = 2 GHz) Gain Compression (VCC = 26 Vdc, ICQ = 250 mA, f = 2 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA, f = 2 GHz—all phase angles at frequency of test) Typical Performance POUT, Gain & Efficiency (at P-1dB) vs. Frequency 10 60 50 Gain (dB) 9 8 7 1750 Efficiency (%) VCC = 26 V 30 ICQ = 250 mA 1800 1850 40 1900 1950 2000 20 2050 Efficiency (%) 50 16 VCC = 26 V 40 ICQ = 250 mA 12 - 30 5 POUT = 45 W Gain (dB) -15 20 8 -25 10 Return Loss (dB) 4 1900 Frequency (MHz) 1925 1950 1975 Frequency (MHz) 2 4/28/98 60 -35 0 2000 Return Loss (dB) Efficiency (%) Gain 11 Gain (dB) 70 Output Power (W) Output Power & Efficiency 12 Broadband Test Fixture Performance 20 e PTB 20230 Intermodulation Distortion vs. Output Power Output Power vs. Supply Voltage -20 65 -30 60 IMD (dBc) Output Power (Watts) 70 55 50 ICQ = 250 mA f = 2.0 GHz 45 -40 VCC = 26 V -50 ICQ = 250 mA f1 = 1999.9 MHz -60 f2 = 2000.0 MHz -70 40 22 23 24 25 26 10 27 Supply Voltage (Volts) 20 30 Power Gain vs. Output Power Power Gain (dB) 11 ICQ = 250 mA 10 ICQ = 125 mA 9 ICQ = 65 mA VCC = 26 V f = 2.0 GHz 8 7 0 1 10 100 Output Power (Watts) Impedance Data VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA Frequency Z Source Z Source Z Load Z Load GHz R jX R jX 1.75 3.36 -5.20 3.20 -3.10 1.80 3.57 -5.70 3.00 -2.80 1.85 5.14 -5.55 2.90 -2.50 1.90 6.60 -5.40 2.77 -2.10 1.95 8.00 -3.80 2.75 -1.80 2.00 8.95 -1.50 2.80 -1.40 2.05 7.72 0.00 2.95 -1.00 3 4/28/98 40 50 Output Power (Watts-PEP) Z0 = 50 Ω 60 e PTB 20230 Typical Scattering Parameters (VCE = 26 V, IC = 1.75 A) f (MHz) S11 Mag Ang Mag Ang Mag Ang Mag Ang 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 0.936 0.946 0.963 0.970 0.972 0.971 0.972 0.975 0.980 0.980 0.984 0.986 0.994 1.00 0.995 0.976 0.952 0.757 0.682 0.825 0.965 0.994 -179 -179 -180 179 179 178 178 178 177 177 176 176 175 173 171 169 166 162 176 -171 -177 180 1.44 1.06 0.397 0.194 0.100 0.046 0.014 0.026 0.048 0.069 0.090 0.113 0.144 0.186 0.247 0.350 0.585 1.02 1.02 0.979 0.526 0.355 77 70 34 19 11 12 55 130 137 135 132 128 124 119 113 105 92 48 5 -43 -76 -87 0.002 0.002 0.003 0.004 0.006 0.009 0.011 0.012 0.014 0.017 0.019 0.019 0.020 0.023 0.028 0.034 0.043 0.052 0.038 0.019 0.004 0.009 6 23 71 85 89 88 84 83 83 80 74 72 74 75 72 67 57 23 -7 -55 67 94 0.798 0.828 0.883 0.924 0.943 0.982 1.00 0.952 0.923 0.895 0.898 0.897 0.892 0.885 0.881 0.875 0.856 0.751 0.756 0.848 0.897 0.908 -172 -174 -174 -175 -177 -179 177 175 174 174 175 174 174 174 173 172 170 171 178 -178 178 177 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 S21 S12 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 4 4/28/98 S22 Specifications subject to change without notice. L1 © 1997 Ericsson Inc. EUS/KR 1301-PTB 20230 Uen Rev. A 09-28-98