PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description Features The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. • Broadband internal matching • Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc • Typical CW performance - Output power at P–1dB = 180 W - Efficiency = 50% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power Two–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 2.0 A, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 3.84 MHz BW -30 30 -35 25 Gain Drain Efficiency -40 IM3 20 -45 15 -50 10 -55 IMD (dBc), ACPR (dB) Efficiency (%), Gain (dB) 35 PTF211802A Package 20275 ACPR 5 -60 35 37 39 41 43 45 47 PTF211802E Package 30275 Output Power (dBm), Average ESD: Electrostatic discharge sensitive device — observe handling precautions! RF Characteristics at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 2.0 A, POUT = 38 W AVG f1 = 2140 MHz, f2 = 2150 MHz, two–carrier 3GPP, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Units Intermodulation Distortion IM3 — –37 — dBc Gain Gps — 15 — dB Drain Efficiency ηD — 25 — % Symbol Min Typ Max Units Gain Gps 12.5 15 — dB Drain Efficiency ηD 20 22 — % Intermodulation Distortion IMD — –40 –38 dBc Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 2.0 A, POUT = 60 W PEP, f = 2110 MHz, tone spacing = 5 MHz Characteristic Data Sheet 1 2004-02-13 PTF211802 DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Units Drain–Source Breakdown Voltage VGS = 0 V, IDS = 10 µA/side V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On–State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 1.0 A/side VGS 2.5 3.2 4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain–Source Voltage VDSS 65 V Gate–Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation Above 25°C derate by PTF211802A PD 498 2.85 W W/°C Total Device Dissipation Above 25°C derate by PTF211802E PD 647 3.70 W W/°C TSTG –40 to +150 °C PTF211802A RθJC 0.35 °C/W PTF211802E RθJC 0.27 °C/W Storage Temperature Range Thermal Resistance (TCASE = 70°C, 130 W CW) Typical Performance (data taken in a production test fixture) Broadband Performance Power Sweep, under Pulsed Conditions VDD = 28 V, IDQ = 2.0 A, POUT = 38 W VDD = 28 V, IDQ = 2.0 A, f = 2140 MHz, pulse period = 1 ms, 0.8% duty cycle 40 0 58 30 -5 -10 Efficiency 25 -15 20 -20 15 -25 10 Gain 5 2080 2100 56 Output Power (dBm) Return Loss Input Return Loss (dB) Gain (dB), Efficiency (%) Ideal 35 -30 2120 2140 2160 2180 -35 2200 52 Actual 50 P-3dB = 53.6 dBm 48 46 30 Frequency (MHz) Data Sheet P-1dB = 52.8 dBm 54 32 34 36 38 40 42 44 Input Power (dBm) 2 2004-02-13 PTF211802 Typical Performance (cont.) Intermodulation Distortion Products vs. Tone Spacing Intermodulation Distortion vs. Output Power for selected currents VDD = 28 V, IDQ = 2.0 A, POUT (PEP) = 170 W, f = 2140 MHz VDD = 28 V, f = 2140 MHz, tone spacing = 5 MHz -20 Intermodulation Distortion (dBc) -25 -30 1.6 A -35 2.4 A 2.0 A -40 -45 -50 -55 2.2 A -60 1.8 A -65 39 41 43 45 47 49 51 53 3rd Order -25 -30 5th -35 -40 -45 7th -50 -55 -60 0 55 5 10 30 Two–Tone Drive–Up Single–Carrier WCDMA Drive–Up V DD = 28 V, IDQ = 2.0 A, f = 2140 MHz, 3GPP WCDMA signal, Test Model 1 w /16 DPCH, 67% clipping, P/A R = 8.7 dB, 3.84 MHz BW 30 35 -30 IM3 30 -35 25 -40 IM5 20 -45 15 -50 IM7 10 -55 5 -60 44 46 48 50 52 -30 Drain Efficiency Drain Efficiency (%), Gain (dB) -25 Efficiency Intermodulation Distortion (dBc) -20 40 Drain Efficiency (%) 25 VDD = 28 V, IDQ = 2.0 A, f = 2140 MHz, tone spacing = 5 MHz 45 25 -35 20 -40 15 Gain -45 ACPR 10 -50 5 -55 0 -60 37 54 Output Power (dBm), PEP Data Sheet 20 Tone Spacing (MHz) Output Power (dBm), PEP 42 15 ACPR (dBc) Intermodulation Distortion (dBc) -20 38 39 40 41 42 43 44 45 46 47 Output Power (dBm), Avg. 3 2004-02-13 PTF211802 Typical Performance (cont.) IM3, Drain Efficiency and Gain vs. Supply Voltage Bias Voltage vs. Case Temperature Voltage normalized to typical gate voltage. IDQ = 2.0 A, POUT (PEP) = 170 W, f = 2140 MHz, tone spacing = 5 MHz 1.03 -5 45 35 Drain Efficiency 30 IM3 -15 -20 25 -25 20 -30 15 -35 Gain 10 Normalized Bias Voltage -10 40 IM3 (dBc) Drain Efficiency (%), Gain (dB) Series show current. -40 -45 5 22 24 26 28 30 32 34 3.00 A 1.01 6.00 A 1.00 9.00 A 12.00 A 0.99 15.00 A 0.98 18.00 A 0.97 0.96 -20 -50 0 1.02 Drain Voltage (V) 30 80 130 Case Temperature (°C) Broadband Circuit Impedance Data VDD = 28 V, IDQ = 1900 mA, POUT = 30 W AVG Two–Carrier WCDMA Z Source D Z0 = 50 Ω Z Load Z Load 2200 MHz 0.4 0.3 0.1 2070 MHz 0.2 S G G D Z Source Ω Frequency Z Load Ω MHz R jX R jX 2070 10.22 -14.00 4.28 1.24 2110 9.56 -13.48 4.06 1.94 2140 9.14 -13.00 3.98 2.42 2170 8.70 -12.60 3.84 2.90 2200 8.24 -12.22 3.76 3.34 Data Sheet 4 Z Source 2200 MHz 2070 MHz 2004-02-13 PTF211802 Reference Circuit VDD C1 .01µF R3 2KV QQ1 LM7805 R2 1.3KV C2 .01µF R1 1.2KV R4 10V R6 1KV l13 C3 .01µF R5 24KV R7 3KV C4 0.1 µF Q1 BCP56 C5 8.2pF l7 l5 2 RF_IN l1 l2 l3 C7 0.1pF l4 C8 1.2pF R10 10V DUT l9 l11 l6 l17 l15 C6 20pF C12 10pF VDD C13 1µF l19 C14 100µF 50V l 21 l23 C16 C15 12pF 0.6pF l8 l10 l12 l16 C9 20pF R11 10V l20 C11 8.2pF RF_OUT l25 2 l22 l18 C18 10pF l27 l24 C17 12pF l14 C10 0.1µF l26 C19 1µF VDD C20 100 µF 50V 211802_sch-e Reference Circuit Schematic for 2140 MHz Circuit Assembly Information DUT PTF211802E Circuit board 0.76 mm [.030”] thick, εr = 3.48 LDMOS transistor Rogers 4350, 2 oz. copper Microstrip l1 l2 l3 l4 l5 l6 l7, l8 l9, l10 l11, l12 l13, l14 l15, l16 l17, l18 l19, l20 l21, l22 l23, l24 l25 l26 l27 Dimensions: L x W (mm.) 9.40 x 1.70 14.78 x 1.70 16.99 x 2.84 7.57 x 2.84 42.67 x 1.70 4.39 x 1.70 9.04 x 3.30 5.84 x 5.26 6.86 x 15.09 28.58 x 1.70 10.01 x 16.33 21.26 x 1.70 2.74 x 9.96 4.70 x 2.72 5.21 x 1.70 42.67 x 1.70 21.79 x 2.84 11.51 x 1.70 Data Sheet Electrical Characteristics at 2140 MHz 0.110 λ, 50.0 Ω 0.175 λ, 50.0 Ω 0.205 λ, 35.4 Ω 0.092 λ, 35.4 Ω 0.500 λ, 50.0 Ω 0.052 λ, 50.0 Ω 0.110 λ, 31.8 Ω 0.073 λ, 22.4 Ω 0.089 λ, 9.10 Ω 0.337 λ, 50.4 Ω 0.132 λ, 8.42 Ω 0.250 λ, 50.0 Ω 0.035 λ, 13.2 Ω 0.057 λ, 36.5 Ω 0.061 λ, 50.0 Ω 0.500 λ, 50.0 Ω 0.264 λ, 35.4 Ω 0.136 λ, 50.0 Ω 5 Dimensions: L x W (in.) 0.370 x 0.067 0.582 x 0.067 0.669 x 0.112 0.298 x 0.112 1.680 x 0.067 0.173 x 0.067 0.356 x 0.130 0.230 x 0.207 0.270 x 0.594 1.125 x 0.067 0.394 x 0.643 0.837 x 0.067 0.108 x 0.392 0.185 x 0.107 0.205 x 0.067 1.680 x 0.067 0.858 x 0.112 0.453 x 0.067 2004-02-13 PTF211802 Reference Circuit (cont.) C3 R3 R4 R5 C4 C1 C2 R6 +28V LM V DD QQ1 C14 C12 C5 R1 R2 C13 Q1 OUTPUT R7 R10 C16 C6 C15 C17 C9 C8 211802 Rev 2 R11 INPUT C19 C7 C18 C11 C20 V DD C10 211802_assy Reference Circuit1 (not to scale) Component C1, C2, C3 C4, C10 C5, C11 C6, C9 C7 C8 C12, C18 C13, C19 C14, C20 C15 C16, C17 QQ1 Q1 R1 R2 R3 R4, R10, R11 R5 R6 R7 Description Capacitor, 0.01 µF 50 V Capacitor, 0.1 µF, 50 V Capacitor, 8.2 pF Capacitor, 20 pF Capacitor, 0.1 pF Capacitor, 1.2 pF Capacitor, 10 pF Capacitor, 1 µF, ceramic, 50 V Capacitor, 100 µF, 50 V, electrolytic Capacitor, 0.6 pF Capacitor, 12 pF Voltage Regulator Transistor Resistor, 1.2 kΩ, 1/10 W, 0603 Resistor, 1.3 kΩ, 1/10 W, 0603 Resistor, variable 2 kΩ, 4 W, 1206 Resistor, 10 Ω, 1/4 W, 1206 Resistor, 24 kΩ, 1/4 W, 1206 Resistor, 1 kΩ, 1/4 W, 1206 Resistor, 3 kΩ, 1/4 W, 1206 Manufacturer Digi-Key Digi-Key ATC ATC ATC ATC ATC ATC Digi-Key ATC ATC Digi-Key Infineon Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PCC1772CT-ND PCC104BCT-ND 100 B 8R2 100 A 200 100 B 0R1 100 B 1R2 100 B 100 920DC105KW100 P5182-ND 100 B 0R6 100 B 120 LM 7805 BCP56 P1.2KGCT-ND P1.3KGCT-ND 3224W-202ETR-ND P10KECT-ND P24KECT-ND P1.0KECT-ND P3.0KECT-ND 1Gerber Files for this circuit available on request. Data Sheet 6 2004-02-13 PTF211802 Package Outline Specifications Type Package Outline Package Description Marking PTF211802A PTF211802E 20275 30275 Standard ceramic, flange Thermally enhanced, flange PTF211802A PTF211802E Package 30275 Package 20275 2X 45°±5° X 1.19 [.047] 2X R 1.59 [.063] D 16.61±0.51 [.654±.020] D S +0.10 9.40 -0.15 +.004 [.370 ] -.006 4X 3.23±0.25 [.127±.010] 2X 3.18 [.125] G +0.10 LID 9.14 -0.15 +.004 [.360 ] -.006 10.16 [.400] G 4X 11.68 [.460] 35.56 [1.400] 31.24±0.28 [1.230±.011] 1.63 [.064] 4.55±0.38 [.179±.015] 0.038 [.0015] -A0.51 [.020] 2.18 [.086] SPH 41.15 [1.620] ERA-H-30275-4-1-2304 Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.13 +0.051/–0.025 [.005 +.002/–.001 ] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 7 2004-02-13 PTF211802 Confidential Revision History: Data Sheet Previous Version: Data Sheet, 2004-01-06 Page Subjects (major changes since last revision) 5, 6 2004-02-13 Combine PTF211802A and PTF211802E onto this Data Sheet. Alter circuit configuration We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2004-02-13 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 2004-02-13