INFINEON PTFB193404F

PTFB193404F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
340 W, 30 V, 1930 – 1990 MHz
Description
The PTFB193404F is a 340-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1930 to 1990 MHz
frequency band. Features include input and output matching, high gain
and thermally-enhanced package with earless flange. Manufactured
with Infineon’s advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PTFB193404F
Package H-37275-6/2
Features
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
40
-20
-30
30
-35
25
IMD Low
-40
20
-45
15
ACPR
10
-50
-55
5
IMD Up
0
-60
36
38
40
42
44
46
Broadband internal matching
•
Wide video bandwidth
•
Typical single-carrier WCDMA performance,
1990 MHz, 30 V
- Output power = 125 W
- Efficiency = 31%
- Gain = 17 dB
- PAR = 5.5 dB @ 0.01% CCDF
- ACPR @ 5 MHz = –35 dBc
•
Increased negative gate-source voltage range
for improved performance in Doherty amplifiers
•
Capable of handling 10:1 VSWR @ 30 V, 340 W
(CW) output power
•
Integrated ESD protection
•
Excellent thermal stability
•
Pb-free and RoHS compliant
35
Efficiency
Drain Efficiency (%)
IMD, ACPR (dBc)
-25
•
48
50
52
Average Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, ƒ = 1990 MHz, 5 MHz spacing, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
17.5
19
—
dB
Drain Efficiency
ηD
28.5
30
—
%
ACPR
—
–31
–29
dBc
Adjacent Channel Power Ratio
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet – DRAFT ONLY
1 of 13
Rev. 04, 2011-02-07
PTFB193404F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-carrier WCDMA Characteristics (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
18
—
dB
Drain Efficiency
ηD
—
29
—
%
Intermodulation Distortion
IMD
—
–33
—
dBc
Two-tone Characteristics (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 2.6 A, POUT = 265 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
19
—
dB
Drain Efficiency
ηD
—
36
—
%
Intermodulation Distortion
IMD
—
30
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
VDS = 63 V, VGS = 0 V
IDSS
—
—
10.0
µA
On-State Resistance
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.05
—
Ω
Operating Gate Voltage
VDS = 30 V, IDQ = 2.6 A
VGS
2.3
2.8
3.3
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–6 to +10
V
Junction Temperature
TJ
200
°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C)
RθJC
0.2
°C/W
Data Sheet – DRAFT ONLY
2 of 13 one
Rev. 04, 2011-02-07
PTFB193404F
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
Package Outline
Package Description
Shipping
PTFB193404F V1
H-37275-6/2
Ceramic open-cavity, earless push-pull
Tray
PTFB193404F V1 R250
H-37275-6/2
Ceramic open-cavity, earless push-pull
Tape & reel, 250 pcs
Typical Performance (data taken in production test fixture)
Two-carrier WCDMA 3GPP Drive-up
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 2.6 A,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
IM3 Low
IM3 Up
35
19
Gain (dB)
-35
-40
-45
-50
-60
36
38
40
42
44
46
48
50
20
18
Efficiency
15
10
5
16
0
36
52
Average Output Power (dBm)
Data Sheet – DRAFT ONLY
25
17
1990
1960
1930
s uuu
-55
30
Gain
Efficiency (%)
-30
IMD (dBc)
40
20
-25
38
40
42
44
46
48
50
52
Average Output Power (dBm)
3 of 13 two
Rev. 04, 2011-02-07
PTFB193404F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Broadband Performance
Two-tone Drive-up
VDD = 30 V, IDQ = 2.6 A, POUT = 52 dBm
VDD = 30 V, IDQ = 2.6 A,,
ƒ 1 = 1989 MHz, ƒ2 = 1990 MHz
45
0
40
-20
Efficiency
IMD3
30
20
-30
-40
10
1840
Gain
1900
1960
2020
35
30
-35
25
3rd Order IMD
20
-45
15
Efficiency
-55
Efficiency (%)
-10
Return Loss
40
-25
IMD (dBc)
50
Return Loss (dB) / IMD (dBc)
Gain (dB) / Efficiency (%)
60
10
5
0
-65
-50
2080
39
44
49
54
Output Power, PEP. (dBm)
Frequency (MHz)
Two-tone Drive-up
Two-tone Drive-up (over temperature)
VDD = 30 V, IDQ = 2.6 A,
(POUT-max 3rd order IMD @ –30 dBc)
ƒ1 = 1989 MHz, ƒ 2 = 1990 MHz
VDD = 30 V, IDQ = 2.6 A,
ƒ1 = 1959 MHz, ƒ2 = 1960 MHz
42
35
28
18
21
Efficiency
17
14
16
15
40
44
48
52
Gain
30
18
20
Efficiency
17
0
16
56
40
19
7
+25C
+85C
–30C
10
0
39
Output Power, PEP (dBm)
Data Sheet – DRAFT ONLY
50
20
Gain (dB)
Gain
Efficiency (%)
Gain (dB)
19
21
Efficiency (%)
20
41
43
45
47
49
51
53
55
57
Output Power, PEP (dBm)
4 of 13 one
Rev. 04, 2011-02-07
PTFB193404F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Intermodulation Distortion
vs. Output Power
Two-tone Drive-up
at Selected Frequencies
VDD = 30 V, IDQ = 2.6 A,
VDD = 30 V, IDQ = 2.6 A, tone spacing = 1 MHz
ƒ1 = 1989 MHz, ƒ2 = 1990 MHz
-15
3rd Order
-25
-30
5th
-35
IMD (dBc)
-40
-50
1990 MHz
1960 MHz
1930 MHz
-60
-45
7th
-55
-65
-75
-70
39
41
43
45
47
49
51
53
55
39
57
41
-20
IMD3
IMD (dBc)
-30
IMD5
IMD7
IMD Lower
IMD Upper
-70
10
Adjacent Channel Power Ratio (dB)
ƒ = 1930 MHz, POUT = 317 W (PEP)
-10
1
51
53
55
57
-20
40
Efficiency
35
-30
30
25
-40
20
ACPR Up
15
-50
10
ACPR Low
5
-60
0
36
100
38
40
42
44
46
48
50
52
Average Output Power (dBm)
Two Tone Spacing (MHz)
Data Sheet – DRAFT ONLY
49
VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH,
43% clipping, PAR = 7.5 dB, 3.84 MHz BW
VDD = 30 V, IDQ = 2.6 A,
-60
47
Single-carrier WCDMA Drive-up
Intermodulation Distortion
vs. Tone Spacing
-50
45
Output Power, PEP (dBm)
Output Power, PEP (dBm)
-40
43
Drain Efficiency (%)
IMD 3rd Order (dBc)
-20
5 of 13 two
Rev. 04, 2011-02-07
PTFB193404F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Drive-up
V DD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz,
V DD = 30 V, IDQ = 2.6 A, ƒ = 1960 MHz,
3GPP WCDMA s ignal,
PAR = 7.5 dB, BW = 3.84 MHz
3GPP WCDMA signal,
PAR = 7.5 dB, BW = 3.84 MHz
26
18
10
Efficiency
14
-10
PARC @ .01% CCDF
10
-30
6
-50
ACP
2
-70
36
38
40
42
44
46
48
50
52
22
18
10
Efficiency
14
10
6
-50
ACP
-70
36
40
42
44
46
48
50
52
54
Single-carrier WCDMA Broadband
V DD = 30 V, IDQ = 2.6 A, POUT = 125 W,
3GPP WCDMA signal,
PAR = 7.5 dB, BW = 3.84 MHz
3GPP WCDMA signal
Gain
40
20
12
Efficiency
8
0
-20
PARC @ .01% CCDF
-40
ACP
0
38
40
42
44
46
48
50
52
-60
Gain, PARC (dB) / Efficiency (%) .
Single-carrier WCDMA Drive-up
V DD = 30 V, IDQ = 2.6 A, ƒ = 1930 MHz,
Efficiency (%) / ACP (dBc)
PARC (dB) / PARC Gain (dB)
38
Average Output Power (dBm)
60
36
-30
2
54
20
4
-10
PARC @ .01% CCDF
Average Output Power (dBm )
16
30
54
0
35
Efficiency
IRL
-10
25
-20
Gain
15
PARC @ .01% CCDF
-30
5
ACP
-5
1840
1900
1960
2020
-40
2080
Frequency (MHz)
Average Output Power (dBm)
Data Sheet – DRAFT ONLY
Efficiency (%) / ACP (dBc)
30
50
Gain
Return Loss (dB) / ACP (dBc)
22
PARC (dB) / PARC Gain (dB)
50
Gain
Efficiency (%) / ACP (dBc)
PARC (dB) / PARC Gain (dB)
26
6 of 13 one
Rev. 04, 2011-02-07
PTFB193404F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance (measurements taken on full part, both sides)
Z Source Ω
Frequency
Z Load Ω
D
MHz
R
jX
R
jX
1900
1.21
–3.60
0.73
–2.08
1930
1.21
–3.53
0.72
–2.01
1960
1.20
–3.47
0.72
–1.94
1990
1.20
–3.41
0.72
–1.87
2020
1.19
–3.35
0.72
–1.81
Z Source G
G
S
PP- FET
Z Load
c o mp l e _
t 1
e 2 - 1
6 - 2 0 1 0
D
See next page for circuit information
Data Sheet – DRAFT ONLY
7 of 13 two
Rev. 04, 2011-02-07
PTFB193404F
Confidential, Limited Internal Distribution
Reference Circuit
C802
10000000 pF
C804
10000000 pF
S3
8
7
1
6
2
R801
100 Ohm
R803
10 Ohm
5
3
C803
1000 pF
R804
1200 Ohm
4
C 2
S2
S1
2
R802
1300 Ohm
4
S
1
B
C801
1000000 pF
E 3
1
3
TL102
TL101
2
3
1
TL116
TL117
TL122
C102
1000000 pF
TL118
2
TL119
L101
22 nH
TL103
R103
10 Ohm
TL104
C106
18 pF
TL107
TL105
3
1
Gate DUT
(Pin G1)
4
PORT
RF_IN
1
C107
1.5 pF
TL121
TL110
TL120
3
1
TL109
TL108
2
C105
18 pF
TL106
C103
10000000 pF
TL123
TL124
TL111
3
1
C101
1000000 pF
TL112
L102
22 nH
2
εr = 3.48
TL113
R104
10 Ohm
TL114
b 1 93 4 0 4F - v1 _ B D o ut _1 2 - 1 6 - 2 0 10
C104
10000000 pF
TL115
Gate DUT
(Pin G2)
H = 20 mil
RO/RO4350B1
Reference circuit input schematic for ƒ = 1990 MHz
Data Sheet – DRAFT ONLY
8 of 13 one
Rev. 04, 2011-02-07
PTFB193404F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
C213
10000000 pF
TL225
Drain VDD
(Pin V1)
Drain DUT
(Pin D1)
Drain DUT
(Pin D2)
Drain VDD
(Pin V2)
TL224
3
2
1
TL210
TL223
3
2
1
TL222
3
2
1
TL226
3
2
TL221
1
TL220
3
2
1
VDD
DCVS
V1
C205
18 pF
TL227
TL207
TL209
C203
100000000 pF
C208
4700000 pF
C209
4700000 pF
C212
10000000 pF
TL206
TL212
TL203
C204
18 pF
TL205
2
TL204
TL202
TL208
TL201
TL211
PORT
RF_OUT
1
1
3
C201
0.8 pF
TL216
2
TL217
1
2
3
C211
10000000 pF
TL215
1
2
3
C210
10000000 pF
TL214
1
2
3
C207
4700000 pF
TL219
TL213
1
2
3
C206
4700000 pF
TL218
b 1 9 3 4 0 4F - v1 _ B D o u t _ 1 2- 1 6- 2 0 1 0
1
3
V
DD
DCVS
V2
C202
100000000 pF
εr = 3.48
H = 20 mil
RO/RO4350B1
Reference circuit output schematic for ƒ = 1990 MHz
Reference Circuit Assembly
DUT
PTFB193404F
Test Fixture Part No.
LTN/PTFB193404EF
Rogers RO4350, 0.508 mm [0.020”] thick, 1 oz. copper, εr = 3.48copper
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
PCB
Transmission
Electrical
Line
Input
Characteristics
Dimensions: W, L (mm)
Dimensions: W, L (mils)
TL101
0.017 λ, 47.12 Ω
W1 = 1.270, W2 = 1.270, W3 = 1.524
W1 = 50, W2 = 50, W3 = 60
TL102
0.039 λ, 47.12 Ω
W = 1.270, L = 3.553
W = 50, L = 140
TL103
0.023 λ, 47.12 Ω
W = 1.270, L = 2.055
W = 50, L = 81
TL104
0.013 λ, 47.12 Ω
W = 1.270, L = 1.168
W = 50, L = 46
TL105
0.122 λ, 7.29 Ω
W = 12.700, L = 10.160
W = 500, L = 400
W1 = 0.010, W2 = 1.168, Offset = 5.893
W1 = 10, W2 = 46, Offset = 232
TL106
TL107
W1 = 0.010, W2 = 1.168, Offset = –5.893
W1 = 10, W2 = 46, Offset = –232
TL108
0.007 λ, 34.08 Ω
W = 2.032, L = 0.635
W = 80, L = 25
TL109
0.012 λ, 34.08 Ω
W1 = 2.032, W2 = 1.034
W1 = 80, W2 = 41
TL110
0.055 λ, 53.60 Ω
W = 1.034, L = 5.029
W = 41, L = 198
TL111
0.023 λ, 47.12 Ω
W = 1.270, L = 2.111
W = 50, L = 83
TL112
0.017 λ, 47.12 Ω
W = 1.270, L = 1.524
W = 50, L = 60
TL113
0.023 λ, 47.12 Ω
W = 1.270, L = 2.055
W = 50, L = 81
table continued on page 9
Data Sheet – DRAFT ONLY
9 of 13 two
Rev. 04, 2011-02-07
PTFB193404F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Transmission
Line
Input (cont.)
Electrical
Characteristics
Dimensions: W, L (mm)
Dimensions: W, L (mils)
TL114
0.013 λ, 47.12 Ω
W = 1.270, L = 1.168
W = 50, L = 46
TL115
0.122 λ, 7.29 Ω
W = 12.700, L = 10.160
W = 500, L = 400
TL116
0.068 λ, 47.12 Ω
W = 1.270, L = 6.170
W = 50, L = 243
TL117
0.032 λ, 47.12 Ω
W = 1.270, L = 2.875
W = 50, L = 113
TL118
0.024 λ, 47.12 Ω
W = 1.270, L = 2.131
W = 50, L = 84
TL119
0.017 λ, 47.12 Ω
W = 1.270, L = 1.524
W = 50, L = 60
TL120
0.084 λ, 53.60 Ω
W = 1.034, L = 7.671
W = 41, L = 302
TL121
0.014 λ, 53.60 Ω
W1 = 1.034, W2 = 1.034, W3 = 1.27
W1 = 41, W2 = 41, W3 = 50
TL122
0.014 λ, 47.12 Ω
W1 = 1.270, W2 = 1.270, W3 = 1.270,
W4 = 1.270
W1 = 50, W2 = 50, W3 = 50,
W4 = 50
TL123
0.032 λ, 47.12 Ω
W = 1.270, L = 2.896
W = 50, L = 114
TL124
0.014 λ, 47.12 Ω
W1 = 1.270, W2 = 1.270, W3 = 1.27
W1 = 50, W2 = 50, W3 = 50
TL201
W1 = 1.577, W2 = 1.046
W1 = 62, W2 = 41
TL202
W1 = 2.263, W2 = 1.577
W1 = 89, W2 = 62
W1 = 89, W2 = 89, W3 = 30
Output
TL203
0.009 λ, 31.48 Ω
W1 = 2.263, W2 = 2.263, W3 = 0.762
TL204
0.139 λ, 31.48 Ω
W = 2.263, L = 12.299
W = 89, L = 484
W1 = 0.001, W2 = 13.335, Offset = –6.223
W1 = 1, W2 = 525, Offset = –245
TL205
TL206
W1 = 3.048, W2 = 2.263
W1 = 120, W2 = 89
TL207
0.009 λ, 25.04 Ω
W = 3.048, L = 0.762
W = 120, L = 30
TL208
0.266 λ, 40.78 Ω
W = 1.577, L = 23.889
W = 62, L = 941
TL209
0.160 λ, 6.97 Ω
W = 13.335, L = 13.335
W = 525, L = 525
TL210
0.160 λ, 6.97 Ω
W = 13.335, L = 13.335
W = 525, L = 525
TL211
0.151 λ, 53.21 Ω
W = 1.046, L = 13.774
W = 41, L = 542
TL212
0.120 λ, 31.48 Ω
W = 2.263, L = 10.617
W = 89, L = 418
TL213
0.024 λ, 19.85 Ω
W1 = 4.064, W2 = 4.064, W3 = 2.032
W1 = 160, W2 = 160, W3 = 80
TL214
0.026 λ, 19.85 Ω
W1 = 4.064, W2 = 4.064, W3 = 2.286
W1 = 160, W2 = 160, W3 = 90
TL215
0.026 λ, 19.85 Ω
W1 = 4.064, W2 = 4.064, W3 = 2.286
W1 = 160, W2 = 160, W3 = 90
TL216
0.024 λ, 19.85 Ω
W1 = 4.064, W2 = 4.064, W3 = 2.032
W1 = 160, W2 = 160, W3 = 80
TL217
0.026 λ, 19.85 Ω
W1 = 4.064, W2 = 4.064, W3 = 2.286
W1 = 160, W2 = 160, W3 = 90
TL218
0.116 λ, 19.85 Ω
W = 4.064, L = 10.008
W = 160, L = 394
TL219
0.052 λ, 19.85 Ω
W = 4.064, L = 4.470
W = 160, L = 176
TL220
0.116 λ, 19.85 Ω
W = 4.064, L = 10.008
W = 160, L = 394
TL221
0.024 λ, 19.85 Ω
W1 = 4.064, W2 = 4.064, W3 = 2.032
W1 = 160, W2 = 160, W3 = 80
TL222
0.026 λ, 19.85 Ω
W1 = 4.064, W2 = 4.064, W3 = 2.286
W1 = 160, W2 = 160, W3 = 90
TL223
0.026 λ, 19.85 Ω
W1 = 4.064, W2 = 4.064, W3 = 2.286
W1 = 160, W2 = 160, W3 = 90
TL224
0.026 λ, 19.85 Ω
W1 = 4.064, W2 = 4.064, W3 = 2.286
W1 = 160, W2 = 160, W3 = 90
TL225
0.024 λ, 19.85 Ω
W1 = 4.064, W2 = 4.064, W3 = 2.032
W1 = 160, W2 = 160, W3 = 80
TL226
0.052 λ, 19.85 Ω
W = 4.064, L = 4.470
W = 160, L = 176
W1 = 0.001, W2 = 13.335, Offset = 6.223
W1 = 1, W2 = 525, Offset = 245
TL227
Data Sheet – DRAFT ONLY
10 of 13 one
Rev. 04, 2011-02-07
PTFB193404F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
RO4350, .020
.020
VDD
(60)
C803
R802
R804
C213
C209
C212 C208
C802
C104
S2
+
R803
R801
S1
C203
VDD
S3
C801
C102
L101
R103
C104
C107
RF_IN
C204
C205
C106
C105
C103
RF_OUT
C201
L102
R104
C101
VDD
C202
C210
C206
C211
C207
PTFB193404_IN_01
PTFB193404_OUT_01
RO4350,.020
(63)
b1 9 3 4 0 4f - v 1 _ C D _1 2 - 1 6 - 2 0 1 0
Reference circuit assembly diagram (not to scale)
Component ID
Description
Suggested Manufacturer
P/N
C101, C102
Chip capacitor, 1 µF
ATC
NFM18PS105R0J30
C103, C104
Capacitor, 10 µF
Digi-Key
490-4393-2-ND
C105, C106,
C204, C205
Capacitor, 18 pF
ATC
800A180JT
C107
Capacitor, 1.5 pF
ATC
800A1R5BT
C801
Capacitor, 1 µF
Digi-Key
490-4736-2-ND
C802, C804
Capacitor, 10 µF
Digi-Key
587-1818-2-ND
C803
Chip capacitor, 1000 pF
Digi-Key
PCC1772CT-ND
L101, L102
Inductor, 22 nH
Digi-Key
0805W220JT
R101, R102
Resistor, 1000 Ω
Digi-Key
P1.0KECT-ND
R103, R104
Resistor, 10 Ω
Digi-Key
P10GTR-ND
R801
Resistor, 100 Ω
Digi-Key
P100GTR-ND
R802
Resistor, 1300 Ω
Digi-Key
P1.3KGTR-ND
R803
Resistor, 10 Ω
Digi-Key
P101GTR-ND
R804
Resistor, 1200 Ω
Digi-Key
P1.2KGTR-ND
S1
Potentiometer
Digi-Key
3224W-202ECT-ND
S2
Transistor
Digi-Key
BCP56-ND, BCP56
S3
Voltage regulator
Digi-Key
LM780L05ACM-ND, 7805
C201
Capacitor, 0.8 pF
ATC
800A0R8BT
C202, C203
Capacitor, 100 µF
Digi-Key
PCE4442TR-ND
C206, C207,
C208, C209
Capacitor, 4.7 µF
Digi-Key
490-1864-2-ND
C210, C211,
C212, C213
Capacitor, 10 µF
Digi-Key
587-1818-2-ND
Data Sheet – DRAFT ONLY
11 of 13 two
Rev. 04, 2011-02-07
PTFB193404F
Confidential, Limited Internal Distribution
Pinout Diagram
Package H-37275-6/2
V1
V2
D1
D2
S=
1
G2
-37275-6-2_pd_07-22-2010
Pin
Description
V1
V2
D1
D2
G1
G2
S
VDD device 1
VDD device 2
Drain device 1
Drain device 2
Gate device 1
Gate device 2
Source (flange)
See next page for package outline specifications
Data Sheet – DRAFT ONLY
12 of 13 one
Rev. 04, 2011-02-07
PTFB193404F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-37275-6/2
31.750
[1.250]
13.716
[.540]
2X 45° X 1.19
[45° X .047]
2X 2.032
[.080]
REF
2X 1.143
[.045]
CL
V1
2X 30°
2X 3.175
[.125]
D1
D2
V2
9.398
[.370]
CL
G1
+.381
4X R0.508 -.127
R.020 +.015
-.005
[
]
3.226±0.508
[.127±.020]
10.160
[.400]
9.144
[.360]
16.612±.500
[.654±.020]
G2
C
L
C
L
4X 11.684
[.460]
2.134
[.084] SPH
31.242±0.280
[1.230±.011]
1.626
[0.064]
4.585+0.250
-0.127
.180 +.010
-.005
[
CL
]
h- 37275- 6-2_po _07-21- 2010
32.258
[1.270]
S
Diagram Notes—unless otherwise specified:
1.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
2.
Primary dimensions are mm. Alternate dimensions are inches.
3.
All tolerances ± 0.127 [.005] unless specified otherwise.
4.
Pins: D1, D2 - drain, devices 1 & 2; G1, G2 - gate, devices 1 & 2;
V1, V2 - VDD, devices 1 & 2; S - source (flange).
5.
Lead thickness: 0.127 ±0.051 [.005 ±.002].
6.
Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet – DRAFT ONLY
13 of 13 two
Rev. 04, 2011-02-07
PTFB193404F V1
Confidential, Limited Internal Distribution
Revision History: 2011-01-24
Previous Version:
Data Sheet
2010-12-16, Data Sheet
Page
Subjects (major changes since last revision)
1, 2
RF tables revised for clarity.
We Listen to Your Comments
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Your feedback will help us to continuously improve the quality of this document.
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Edition 2011-01-24
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any
kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet – DRAFT ONLY
14 of 13
Rev. 04, 2011-02-07