PZT751T1 Preferred Device PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features • High Current: 2.0 A • The SOT−223 Package can be soldered using wave or reflow. • SOT−223 package ensures level mounting, resulting in improved • • thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die NPN Complement is PZT651T1 Pb−Free Package is Available http://onsemi.com SOT−223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT COLLECTOR 2, 4 BASE 1 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) EMITTER 3 Symbol Value Unit Collector−Emitter Voltage VCEO 60 Vdc Collector−Base Voltage VCBO 80 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 2.0 Adc Total Power Dissipation @ TA = 25°C(1) Derate above 25°C PD 0.8 6.4 W mW/°C Storage Temperature Range Tstg −65 to 150 °C Junction Temperature TJ 150 °C Symbol Value Unit RqJA 156 °C/W TL 260 °C Rating THERMAL CHARACTERISTICS Rating Thermal Resistance from Junction−to− Ambient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath 10 Sec Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum recommended footprint. Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. 4 1 MARKING DIAGRAM TO−261AA CASE 318E STYLE 1 D ZT 751 ZT 751 = Specific Device Code D = Date Code ORDERING INFORMATION Device Package Shipping PZT751T1 SOT−223 1000 / Tape & Reel PZT751T1G SOT−223 (Pb−Free) 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: PZT751T1/D PZT751T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Max Unit Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 60 − Vdc Collector−Emitter Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 80 − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc Base−Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO − 0.1 mAdc Collector−Base Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO − 100 nAdc 75 75 75 40 − − − − − − 0.5 0.3 OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) hFE − Collector−Emitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base−Emitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) − 1.0 Vdc Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) VBE(sat) − 1.2 Vdc fT 75 − MHz Current−Gain−Bandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. http://onsemi.com 2 Vdc PZT751T1 NPN PNP 300 250 240 225 VCE = 2.0 V TJ = 125°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 270 210 180 25°C 150 120 −55 °C 90 TJ = 125°C 60 30 200 175 25°C 150 125 100 −55 °C 75 50 25 0 10 20 50 0 −10 −20 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) Figure 1. Typical DC Current Gain −1.6 1.4 −1.4 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) −1.8 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 2.0 V 0.6 PNP −2.0 1.8 1.0 −50 −100 −200 −500 −1.0 A −2.0 A −4.0 A IC, COLLECTOR CURRENT (mA) Figure 2. Typical DC Current Gain NPN 2.0 0.4 −1.2 VBE(sat) @ IC/IB = 10 −1.0 −0.8 VBE(on) @ VCE = 2.0 V −0.6 −0.4 VCE(sat) @ IC/IB = 10 0.2 0 VCE = −2.0 V 50 100 200 500 1.0 A IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 −0.2 2.0 A 0 4.0 A −50 Figure 3. On Voltages −100 −200 −500 −1.0 A IC, COLLECTOR CURRENT (mA) Figure 4. On Voltages http://onsemi.com 3 −2.0 A −4.0 A NPN 1.0 0.9 −0.9 0.8 −0.7 0.6 −0.6 0.5 0.3 −0.5 IC = 10 mA IC = 100 mA IC = 500 mA −0.4 IC = 2.0 A −0.2 0.1 −0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 NPN IC, COLLECTOR CURRENT 0.5 0.01 1.0 −50 −100 −200 −500 PNP −10 1.0 ms 1.0 0.02 IC = −100 mA −4.0 2.0 0.05 IC = −2.0 A Figure 6. Collector Saturation Region 4.0 0.1 IC = −10 mA 0 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 IB, BASE CURRENT (mA) Figure 5. Collector Saturation Region 10 IC = −500 mA −0.3 0.2 0.2 TJ = 25°C −0.8 TJ = 25°C 0.7 0.4 PNP −1.0 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) PZT751T1 TA = 25°C 100 ms −2.0 1.0 ms −1.0 MPS65 0 MPS65 1 −0.5 −0.2 TC = 25°C −0.1 −0.05 WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) −0.02 −0.01 −1.0 100 Figure 7. Safe Operating Area TA = 25°C MPS75 0 MPS75 1 100 ms TC = 25°C WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −2.0 −5.0 −10 −20 −50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 8. Safe Operating Area http://onsemi.com 4 −100 PZT751T1 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A F INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 4 S 1 2 B 3 D L G J C 0.08 (0003) M H STYLE 1: PIN 1. 2. 3. 4. K SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 PZT751T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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