BBY 58-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode 2 • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment 1 • For low frequency control elements VES05991 such as TCXOs and VCXOs • Very low capacitance spread Type Marking Ordering Code Pin Configuration Package BBY 58-02W 8 Q62702-B916 1=C SCD-80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 10 V Forward current IF 20 mA Operating temperature range T op -55 ...+150 °C Storage temperature T stg -55 ...+150 Semiconductor Group Semiconductor Group 11 Value Unit Jul-30-1998 1998-11-01 BBY 58-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 1 IR - - 100 DC characteristics Reverse current nA VR = 8 V Reverse current VR = 8 V, TA = 65 °C AC characteristics CT Diode capacitance pF VR = 1 V, f = 1 MHz 17.5 18.3 19.3 VR = 2 V, f = 1 MHz - 12.35 - VR = 3 V, f = 1 MHz - 8.6 - VR = 4 V, f = 1 MHz 5.5 6 6.6 CT1/C T3 - 2.15 - CT1/C T4 2.8 3.05 3.3 rs - 0.25 - Ω CC - 0.09 - pF Ls - 0.6 - nH Capacitance ratio - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance VR = 1 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-30-1998 1998-11-01 BBY 58-02W Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) 10 -2 32 pF 1/°C CT T Cc 24 20 10 -3 16 12 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 10 -4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 VR V 5.0 VR Normalized diode capacitance C(TA) / C(25°C)= f (T A) f = 1MHz, VR = Parameter 1.04 1V CTA 1.02 /C 25°C 4V 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -30 -10 10 30 50 70 °C 100 TA Semiconductor Group Semiconductor Group 33 Jul-30-1998 1998-11-01