VS-30CPU04PbF Vishay Semiconductors Ultrafast Rectifier, 2 x 15 A FRED Pt® FEATURES Base common cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level 1 3 Anode Anode 2 1 2 Common cathode TO-247AC DESCRIPTION/APPLICATIONS FRED Pt® series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package TO-247AC IF(AV) 2 x 15 A VR 400 V VF at IF 1.25 V trr typ. See Recovery table TJ max. 175 °C Diode variation Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VRRM per leg Average rectified forward current total device Non-repetitive peak surge current per leg Peak repetitive forward current per leg Operating junction and storage temperatures IF(AV) VALUES UNITS 400 V 15 Rated VR, TC = 149 °C 30 IFSM TC = 25 °C 200 IFRM Rated VR, TC = 149 °C, square wave, 20 kHz TJ, TStg A 30 - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 15 A MIN. TYP. MAX. 400 - - - 1.17 1.25 IF = 15 A, TJ = 150 °C - 0.93 1.12 VR = VR rated - 0.3 10 TJ = 150 °C, VR = VR rated - 30 500 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 400 V - 28 - pF Series inductance LS Measured lead to lead 5 mm from package body - 12 - nH Document Number: 94013 Revision: 17-Feb-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 VS-30CPU04PbF Vishay Semiconductors Ultrafast Rectifier, 2 x 15 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time Peak recovery current trr IRRM MIN. TYP. MAX. - 36 60 TJ = 25 °C - 46 - TJ = 125 °C - 80 - TJ = 25 °C TJ = 125 °C IF = 15 A dIF/dt = 200 A/μs VR = 200 V - 3.6 - - 8.7 - UNITS ns A TJ = 25 °C - 84 - TJ = 125 °C - 345 - MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 °C Thermal resistance, junction to case per leg RthJC - 0.8 1.5 Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.4 - - 6.0 - g - 0.21 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Marking device www.vishay.com 2 Case style TO-247AC °C/W 30CPU04 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94013 Revision: 17-Feb-11 VS-30CPU04PbF Ultrafast Rectifier, 2 x 15 A FRED Pt® Vishay Semiconductors 1000 10 TJ = 175 °C TJ = 150 °C TJ = 25 °C 1 0.1 0.2 TJ = 175 °C 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C 0.1 0.01 TJ = 25 °C 0.001 0.0001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 100 200 300 400 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 0 100 200 300 400 ZthJC - Thermal Impedance (°C/W) VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94013 Revision: 17-Feb-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-30CPU04PbF Vishay Semiconductors Ultrafast Rectifier, 2 x 15 A FRED Pt® 100 IF = 30 A IF = 16 A IF = 8 A 90 170 80 70 160 trr (ns) Allowable Case Temperature (°C) 180 DC 150 Square wave (D = 0.50) Rated VR applied 60 50 40 30 140 See note (1) 20 130 0 5 10 15 20 VR = 200 V TJ = 125 °C TJ = 25 °C 10 100 25 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 1000 25 20 15 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 10 5 Qrr (nC) Average Power Loss (W) RMS limit DC 0 0 5 10 15 20 25 100 IF = 30 A IF = 16 A IF = 8 A 10 100 VR = 200 V TJ = 125 °C TJ = 25 °C 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94013 Revision: 17-Feb-11 VS-30CPU04PbF Ultrafast Rectifier, 2 x 15 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94013 Revision: 17-Feb-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 VS-30CPU04PbF Vishay Semiconductors Ultrafast Rectifier, 2 x 15 A FRED Pt® ORDERING INFORMATION TABLE Device code VS- 30 C P U 04 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - Common cathode 4 - TO-247AC 4 5 - Ultrafast recovery 6 - Voltage rating (04 = 400 V) 7 - PbF = Lead (Pb)-free Tube standard pack quantity: 25 pieces LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95223 Part marking information www.vishay.com/doc?95226 www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94013 Revision: 17-Feb-11 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1