< Silicon RF Power MOS FET (Discrete) > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION 0.2+/-0.05 specifically designed for VHF/UHF RF power 1 1.0+/-0.05 4.9+/-0.15 amplifiers applications. FEATURES 2 INDEX MARK (Gate) Pout>2W, Gp>16dB 0.2+/-0.05 High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) 0.9+/-0.1 @Vdd=7.2V,f=175MHz, 520MHz (0.25) Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile radio sets. RoHS COMPLIANT is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.) Publication Date : Oct．2011 1 (0.22) 3 (0.25) High power gain: RD02MUS1-101,T112 (0.22) 6.0+/-0.15 2.0+/-0.05 RD02MUS1 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 3.5+/-0.05 OUTLINE < Silicon RF Power MOS FET (Discrete) > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25°C 21.9 W Pin Input Power Zg=Zl=50 0.1 W ID Drain Current - 1.5 A Tch Junction temperature - 150 °C Tstg Storage temperature - -40 to +125 °C Rth j-c Thermal resistance 5.7 °C/W Junction to case Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER (Tc=25°C, UNLESS OTHERWISE NOTED) CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zero gate Voltage drain current VDS=17V, VGS=0V - - 100 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA Gate threshold Voltage VDS=12V, IDS=1mA 1 1.8 3 V Output power VDD=7.2V, Pin=50mW, 2 3 - W Drain efficiency f=175MHz Idq=200mA 55 65 - % Output power VDD=7.2V, Pin=50mW, 2 3 - W Drain efficiency f=520MHz Idq=200mA 50 65 - % Vth Pout1 D1 Pout2 D2 VDD=9.2V,Po=2W(Pin Control) Load VSWR tolerance f=175MHz,Idq=200mA,Zg=50 No destroy - No destroy - Load VSWR=20:1(All Phase) VDD=9.2V,Po=2W(Pin Control) Load VSWR tolerance f=520MHz,Idq=200mA,Zg=50 Load VSWR=20:1(All Phase) Note: Above parameters, ratings, limits and conditions are subject to change. Publication Date : Oct．2011 2 < Silicon RF Power MOS FET (Discrete) > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE *1:The material of the PCB Glass epoxy (t=0.8 mm) 20 On heat-sink 15 10 Ids 2.0 1.5 1.0 GM On PCB (*1) with through hole and Heat-sink 5 Ta=+25°C Vds=7.2V 2.5 Ids(A),GM(S) CHANNEL DISSIPATION Pch(W) ... 25 Vgs-Ids CHARACTERISTICS 3.0 0.5 0.0 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(deg:C.) Vds-Ids CHARACTERISTICS 4 5 40 Vgs=8V Ta=+25°C Ta=+25°C f=1MHz Vgs=7V 4.0 30 3.5 Vgs=6V 3.0 Ciss(pF) Ids(A) 2 3 Vgs(V) Vds VS. Ciss CHARACTERISTICS Vgs=9V 5.0 4.5 1 2.5 Vgs=5V 2.0 20 1.5 10 Vgs=4V 1.0 0.5 Vgs=3V 0 0.0 0 2 4 6 Vds(V) 8 0 10 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 40 6 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 5 30 Crss(pF) Coss(pF) 4 20 3 2 10 1 0 0 0 5 10 Vds(V) 15 0 20 Publication Date : Oct．2011 3 5 10 Vds(V) 15 20 < Silicon RF Power MOS FET (Discrete) > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175MHz Pin-Po CHARACTERISTICS @f=175MHz 90 80 ηｄ 25 70 20 60 15 50 Ta=+25°C f=175MHz Vdd=7.2V Idq=200mA 5 0 -10 -5 0 5 10 Pin(dBm) 15 40 80 ηd 2.0 1.0 Idd 0.0 20 0 20 20 60 15 50 Ta=+25°C f=520MHz Vdd=7.2V Idq=200mA 5 0 -5 0 5 10 Pin(dBm) 15 40 Pout(W) , Idd(A) 70 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 80 ηｄ 10 4 Idd 3 80 ηd 1.0 Ta=25°C f=520MHz Vdd=7.2V Idq=200mA Idd 0.0 20 0 60 40 20 40 60 Pin(mW) 80 20 100 Vdd-Po CHARACTERISTICS @f=520MHz 7 1.2 6 1.0 5 0.8 4 0.6 Po(W) Po(W) 5 100 2.0 20 Idd(A) 6 Po 20 100 30 1.4 Ta=25°C f=175MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm 80 3.0 Vdd-Po CHARACTERISTICS @f=175MHz 7 40 60 Pin(mW) Po 90 Gp -10 20 4.0 100 Po 25 40 Pin-Po CHARACTERISTICS @f=520MHz 40 30 60 30 Pin-Po CHARACTERISTICS @f=520MHz 35 Ta=25°C f=175MHz Vdd=7.2V Idq=200mA 1.4 Ta=25°C f=520MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm Po 1.2 1.0 0.8 Idd 3 0.6 2 0.4 2 0.4 1 0.2 1 0.2 0 0.0 0 2 4 6 8 Vdd(V) 10 ηd(%) 10 3.0 12 0.0 2 Publication Date : Oct．2011 4 4 6 8 Vdd(V) 10 12 Idd(A) Gp Pout(W) , Idd(A) 30 100 Po ηd(%) 35 Po(dBm) , Gp(dB) , Idd(A) 4.0 100 Po ηd(%) 40 < Silicon RF Power MOS FET (Discrete) > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTERISTICS 2 4 Vds=10V Tc=-25~+75°C -25°C +25°C Ids(A) 3 +75°C 2 1 0 2 3 4 Vgs(V) 5 6 Publication Date : Oct．2011 5 < Silicon RF Power MOS FET (Discrete) > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TEST CIRCUIT(f=175MHz) Vgg Vdd C2 C1 10μF,50V 15mm 19mm L3 4.7K ohm 10pF 11.5mm 3mm 5mm 3mm 3.3mm 6.5mm 12mm 5mm L2 39pF 13.5mm 3mm 43pF 10pF 62pF RF-in L1 680 ohm 240pF L1:Enameled wire 5 Turns,D:0.43mm,2.46mmm O.D L2:Enameled wire 3 Turns,D:0.43mm,2.46mmm O.D L3:Enameled wire 9 Turns,D:0.43mm,2.46mmm O.D C1,C2:1000pF,0.0022μF in parallel RD02MUS1 175MHz Note:Board material PTFE substrate Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm TEST CIRCUIT(f=520MHz) Vgg Vdd C2 C1 10μF,50V 15mm 19mm L1 4.7K ohm 11mm 26.5m m RF-in 62pF 20mm 2mm 10mm 3mm 4.5m m 18pF 6pF 43pF 40.5mm RF-OUT 62pF 680 ohm 240pF L1:Enameled wire 9 Turns,D:0.43mm,2.46mmm O.D C1,C2:1000pF,0.0022μF in parallel RD02MUS1 520MHz Note:Board material PTFE substrate Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm Publication Date : Oct．2011 6 12mm 5mm 62pF RF-OUT < Silicon RF Power MOS FET (Discrete) > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 175MHz Zin* Zout* Zo=50 Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=11.61+j17.88 Zout*=6.83+j5.21 Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input outputimpedance impedance 175MHz Zin* 175MHz Zout* 520MHz Zin* Zout* Zo=50 Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=1.20+j5.47 Zout*=5.56+j1.31 520MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 520MHz Zout* Publication Date : Oct．2011 7 < Silicon RF Power MOS FET (Discrete) > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 S-PARAMETER DATA (@Vdd=7.2V, Id=200mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.814 0.807 0.804 0.804 0.806 0.812 0.817 0.824 0.830 0.837 0.840 0.844 0.851 0.857 0.862 0.869 0.873 0.879 0.882 0.886 0.889 0.891 0.896 (ang) -132.9 -147.2 -151.6 -154.8 -159.4 -162.6 -164.9 -166.8 -168.5 -169.7 -170.3 -171.1 -172.3 -173.3 -174.4 -175.5 -176.6 -177.5 -178.5 -179.6 179.5 178.4 177.2 S21 (mag) (ang) 16.154 102.5 11.503 92.9 9.965 89.3 8.689 86.2 6.872 81.1 5.687 76.5 4.749 72.3 4.078 69.3 3.560 65.2 3.087 62.8 2.960 61.9 2.767 59.8 2.439 57.1 2.196 55.2 1.987 52.6 1.796 51.0 1.632 49.1 1.520 47.6 1.366 45.3 1.281 45.6 1.197 42.5 1.077 42.1 1.047 41.3 S12 (mag) 0.039 0.040 0.040 0.040 0.039 0.038 0.036 0.035 0.033 0.031 0.030 0.030 0.028 0.025 0.024 0.022 0.020 0.019 0.017 0.015 0.014 0.012 0.011 S22 (ang) 14.9 5.9 2.7 -0.1 -4.3 -8.2 -11.4 -13.2 -16.8 -17.4 -17.9 -19.1 -20.9 -20.9 -21.9 -23.3 -21.9 -20.4 -21.1 -18.4 -17.2 -11.9 -6.6 (mag) 0.591 0.585 0.586 0.590 0.606 0.621 0.639 0.659 0.677 0.697 0.705 0.715 0.731 0.747 0.763 0.773 0.787 0.799 0.806 0.818 0.826 0.832 0.840 (ang) -125.5 -138.6 -142.6 -145.5 -149.3 -151.7 -153.5 -155.2 -156.6 -157.8 -158.4 -159.2 -160.6 -161.8 -162.9 -164.3 -165.5 -166.5 -167.7 -169.0 -170.0 -171.1 -172.6 RD02MUS1 S-PARAMETER DATA (@Vdd=12.5V, Id=200mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.829 0.820 0.817 0.815 0.817 0.822 0.827 0.833 0.838 0.846 0.848 0.852 0.858 0.863 0.868 0.874 0.879 0.884 0.888 0.890 0.894 0.895 0.899 (ang) -127.5 -143.3 -148.2 -151.8 -157.0 -160.7 -163.3 -165.5 -167.3 -168.8 -169.3 -170.2 -171.6 -172.6 -173.8 -175.0 -176.1 -177.1 -178.2 -179.3 179.8 178.6 177.5 S21 (mag) (ang) 16.693 104.9 12.079 94.6 10.504 90.7 9.178 87.5 7.273 82.0 6.018 77.3 5.033 72.8 4.317 69.6 3.772 65.5 3.269 63.0 3.132 62.0 2.928 59.8 2.582 57.1 2.324 55.1 2.102 52.5 1.899 50.8 1.726 48.8 1.606 47.3 1.445 45.0 1.351 45.2 1.265 42.1 1.138 41.6 1.104 40.9 Publication Date : Oct．2011 8 S12 (mag) 0.037 0.039 0.039 0.038 0.037 0.036 0.035 0.033 0.032 0.030 0.029 0.028 0.026 0.024 0.023 0.021 0.019 0.017 0.016 0.014 0.013 0.011 0.010 S22 (ang) 17.6 7.8 4.3 1.1 -2.9 -7.1 -10.7 -12.6 -16.2 -16.9 -17.4 -18.7 -20.3 -21.1 -21.8 -24.5 -21.5 -21.5 -21.1 -18.0 -15.9 -11.0 -4.9 (mag) 0.557 0.550 0.551 0.556 0.574 0.592 0.613 0.636 0.656 0.678 0.686 0.698 0.716 0.733 0.750 0.761 0.777 0.789 0.798 0.810 0.818 0.825 0.833 (ang) -118.4 -132.5 -136.7 -139.9 -144.2 -146.8 -149.0 -150.9 -152.5 -153.9 -154.6 -155.5 -157.0 -158.5 -159.7 -161.2 -162.6 -163.7 -165.0 -166.5 -167.5 -168.7 -170.3 < Silicon RF Power MOS FET (Discrete) > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and In the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date : Oct．2011 9 < Silicon RF Power MOS FET (Discrete) > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Oct．2011 10