RF3932 60W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 14dB at 2GHz 48V Operation Typical Performance RF IN VG Pin 1 ( CUT ) RF OUT VD Pin 2 GND BASE • Output Power 75W at P3dB Functional Block Diagram •Drain Efficiency 68% at P3dB • -40°C to 85°C Operation Applications Commercial Wireless Infrastructure Cellular and WiMAX Infrastructure Civilian and Military Radar General Purpose Broadband Amplifiers Public Mobile Radios Industrial, Scientific, and Medical Product Description The RF3932 is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3932 is an unmatched GaN transistor, packaged in a hermetic flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished by incorporating simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier. Ordering Information RF3932S2 RF3932SB RF3932SQ RF3932SR RF3932TR7 RF3932PCK-411 2-Piece sample bag 5-Piece bag 25-Piece bag 100 Pieces on 7” short reel 750 Pieces on 7” reel Fully assembled evaluation board optimized for 2.14GHz; 48V Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS120406 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 14 RF3932 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 39 mA Operational Voltage 65 V Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TC) -40 to +85 °C 200 °C Operating Junction Temperature (TJ) Human Body Model Class 1A MTTF (TJ < 200°C, 95% Confidence Limits)* 3 x 106 Hours Thermal Resistances, RTH (junction to case) measured at TC = 85°C, DC bias only 2.6 °C/W Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. *MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table below. Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC) / RTH J-C and TC = TCASE Specification Min. Typ. Max. Parameter Unit Condition Recommended Operating Conditions Drain Voltage (VDSQ) 28 Gate Voltage (VGSQ) -4.5 Drain Bias Current -3.7 48 V -2.5 V 3500 MHz 220 Frequency of Operation DC mA Capacitance CRSS 5 pF VG = -8V, VD = OV CISS 23 pF VG = -8V, VD = OV COSS 16.5 pF VG = -8V, VD = OV 2 mA VG = -8V, VD = OV 2.5 mA VG = -8V, VD = 48V DC Functional Test IG (off) - Gate Leakage ID (off) - Drain Leakage VGS (th) - Threshold Voltage -4.2 V VD = 48V, ID = 10mA VDS(on) - Drain Voltage at high current 0.25 V VG = OV, ID = 1.5A -3.4 V 13 dB CW, POUT = 47.8dBm, f = 2140MHz 60 % CW, POUT = 47.8dBm, f = 2140MHz -12 dB CW, POUT = 47.8dBm, f = 2140MHz RF Functional Test [1], [2] VGSQ Gain 11 Drain Efficiency 55 Input Return Loss 2 of 14 VD = 48V, ID = 220mA 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120406 RF3932 Parameter Specification Min. Typ. Max. Unit 21 dB RF Typical Performance Small Signal Gain Small Signal Gain Condition [1], [2] CW, f = 900MHz 14 dB CW, f = 2140MHz Output Power at PdB 48.80 dBm CW, f = 900MHz Output Power at P3dB 48.70 dBm CW, f = 2140MHz Drain Efficiency at P3dB 68 % CW, f = 900MHz Drain Efficiency at P3dB 66 % CW, f = 2140MHz [1] Test Conditions: CW Operation, VDSQ = 48V, IDQ = 220mA, T = 25ºC [2] Performance in a standard tuned test fixture. DS120406 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 14 RF3932 Typical Performance in Standard 2.14GHz Tuned Test Fixture (CW, T = 25°C, unless otherwise noted) Efficiency vs. Output Power (f = 2140MHz) Gain vs. Output Power (f = 2140MHz) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA) 16 70 15 60 Eff 85C Drain Efficiency (%) %) Eff 25C Gain (dB) 14 13 12 Eff -25C 50 40 30 Gain 85C Gain 25C 11 20 Gain -25C 10 10 34 36 38 40 42 44 46 48 32 34 36 38 Output Power (dBm) Input Return Loss vs. Output Power (f = 2140MHz) 44 46 48 (Vd = 48V, Idq = 220mA) -6 17 -8 16 -13 -14 Fixed tuned test circuit 15 -15 14 -16 13 -17 -14 12 -18 -16 11 -19 10 -20 9 -21 -10 -12 Gain (dB) IRL, Input nput Return rn Loss (dB) 42 Small Signal Performance vs. Frequency, Pout = 30dBm (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA) -18 -20 IRL 85C -22 IRL 25C -24 IRL -25C -22 8 Gain 7 IRL -23 6 -24 -26 5 -25 -28 4 -26 -30 3 32 34 36 38 40 42 44 46 2110 48 -27 2120 2130 17 -6 -8 13 -9 12 -10 11 11 -11 10 -12 9 -13 8 -14 7 -15 Drain ain Efficiency (%) 14 Fixed tuned test circuit 64 Input nput Return Loss (dB) Fixed tuned test circuit -7 62 Eff 60 58 -16 6 Gain IRL -17 18 -18 4 2120 2130 2140 Frequency (MHz) 4 of 14 2170 66 -5 15 2110 2160 (CW, Vd = 48V, Idq = 220mA) (CW, Vd = 48V, Idq = 220mA) 5 2150 Drain Efficiency vs vs. Frequency, Frequency Pout = 47.8dBm 47 8dBm Gain/IRL vs. vs Frequency Frequency, Pout = 47 47.8dBm 8dBm 16 2140 Frequency (MHz) Frequency (MHz) Gain (dB)) 40 Output Power (dBm) Input Return Loss (dB) 32 2150 2160 2170 56 2110 2120 2130 2140 2150 2160 2170 Frequency (MHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120406 RF3932 Gain/Efficiency vs. Pout, f = 2140MHz Gain/Efficiency vs. Pout, f = 2140MHz 16 80 15 70 15 70 14 60 14 60 13 50 13 50 12 40 12 40 11 30 11 30 10 Drain Eff 9 8 30 35 40 45 Gain Gain (dB) 10 20 Gain 10 9 0 8 10 0 35 40 Pout, Output Power (dBm) 45 50 Pout, Output Power (dBm) IMD3 vs. Pout Gain vs. Pout (2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 2140MHz) (2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 2140MHz) 18 -15 -20 16 -25 Gain (dB) IMD3, Intermodulaon termodulaon Distoron (dBc) 20 Drain Eff 30 50 Drain Efficiency (%) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA) 80 Drain ain Efficiency (%) Gain (dB) (CW, Vd = 48V, Idq = 220mA) 16 110mA 165mA -30 110mA 14 165mA 220mA 220mA 275mA 275mA 330mA -35 330mA 12 10 -40 1 1 10 10 100 100 Pout, Output Power (W-PEP) Pout, Output Power (W-PEP) IMD vs. Output Power (Vd = 48V, Idq = 220mA, f1 = 2139.5MHz, f2 = 2140.5MHz) Intermodulaon ulaon Distoron (IMD - dBc) -10 -15 -20 -IMD3 IMD3 -IMD5 IMD5 -IMD7 IMD7 -25 -30 -35 -40 -45 -50 -55 1 10 100 Pout, Output Power (W- PEP) DS120406 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 14 RF3932 Typical Performance in Standard 900MHz Tuned Test Fixture (CW, T = 25°C, unless otherwise noted) Small Signal Performance vs. Frequency, Pout = 30dBm Gain/IRL vs. Frequency, Pout = 47.8dBm (Vd = 48V, Idq = 220mA) (CW, Vd = 48V, Idq = 220mA) Fixed tuned test circuit 22 -10 22 -3 21 -4 -11 Fixed tuned test circuit -5 20 -6 19 -7 18 -8 17 -9 16 Gain (dB) 21 Inputt Return Loss (dB) Gain (dB) 20 -10 Gain 15 IRL 14 880 890 900 910 -12 19 13 -13 18 -14 17 -15 16 -16 15 -17 14 -18 13 -19 -20 20 12 -11 11 -12 10 IRL Gain -21 -22 880 920 Input Return turn Loss (dB) 23 890 900 910 920 Frequency (MHz) Frequency (MHz) Drain Efficiency vs. Frequency, Pout = 47.8dBm Gain/Efficiency vs. Pout, f = 900MHz (CW, Vd = 48V, Idq = 220mA) (CW, Vd = 48V, Idq = 220mA) 73 26 80 24 70 22 60 20 50 18 40 Fixed tuned test circuit 71 Gain (dB) Drain Efficiency (%)) 67 65 63 61 16 Eff 59 30 Gain Drain Eff 14 Drain Efficiency (%) 69 20 57 12 55 880 890 900 910 10 38 920 40 42 44 46 48 50 Pout, Output Power (dBm) Frequency (MHz) IMD3 vs. Pout (2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 900MHz) Gain/Efficiency vs. Pout, f = 900MHz 24 70 22 60 20 50 18 40 16 30 Gain Drain Eff 14 20 IMD3, Intermodulaon ntermodulaon Distoron (dBc) -10 80 Drain Efficiency ciency (%) Gain (dB) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA) 26 -15 -20 -25 -30 110mA -35 165mA -40 220mA 275mA -45 330mA 10 12 38 40 42 44 46 48 50 -50 1 10 100 Pout, Output Power (dBm) Pout, Output Power (W-PEP) 6 of 14 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120406 RF3932 Gain vs. Pout IMD vs. Output Power (2-Tone 1MHz Separaon, Vd = 48V, Idq varied, fc = 900MHz) (Vd = 48V, Idq = 220mA, f1 = 899.5MHz, f2 = 900.5MHz) -10 24 Intermodulaon laon Distoron (IMD - dBc) -IMD3 23 Gain (dB) 22 21 20 110mA 19 165mA 220mA 18 275mA 330mA 10 Pout, Output Power (W-PEP) DS120406 -20 IMD3 -IMD5 IMD5 -IMD7 IMD7 -25 -30 -35 -40 -45 -50 -55 17 1 -15 100 1 10 100 Pout, Output Power (W- PEP) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 14 RF3932 Package Drawing (Package Style: Flanged Ceramic) 2 3 1 All dimensions in mm. Pin 1 2 3 8 of 14 Function Gate Drain Source Description Gate - VG input Drain - VD RF Output Source - Ground Base 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120406 RF3932 Bias Instruction for RF3932 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. 2. 3. 4. 5. Connect RF cables at RFIN and RFOUT. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. Apply -8V to VG. Apply 48V to VD. Increase VG until drain current reaches 220mA or desired bias point. 6. Turn on the RF input. DS120406 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 14 RF3932 2.14GHz Evaluation Board Schematic 9*$7( 9'5$,1 & & & & & & & & & 5 & - 5),1 VWULS 5) & & & VWULS - 5)287 & & 2.14GHz Evaluation Board Bill of Materials 10 of 14 Component Value Manufacturer Part Number C1 10pF ATC ATC800A100JT C2, C10, C11, C15 33pF ATC ATC800A330JT C3,C14 0.1F Murata GRM32NR72A104KA01L C4,C13 4.7F Murata GRM55ER72A475KA01L C5 100F Panasonic ECE-V1HA101UP C6 2.2pF ATC ATC800A2R2BT C7, C8 0.8pF ATC ATC800A0R8BT C9 3.0pF ATC ATC800A3R0BT C12 100F Panasonic EEV-TG2A101M R1 10 Panasonic ERJ-8GEYJ100V C16, C17, C18, C19 Not used - - PCB RO4350, 0.030" thick dielectric Rogers - 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120406 RF3932 2.14GHz Evaluation Board Layout Device Impedances Frequency (MHz) Z Source () 2110 2.56 - j4.27 Z Load ( 4.76 + j0.7 2140 2.45 - j3.94 4.77 + j1.3 2170 2.36 - j3.6 4.80 + j1.9 Note: Device impedances reported are the measured evaluation board impedances chosen for a trade-off of efficiency, peak power, and linearity performance across the entire frequency bandwidth. DS120406 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 11 of 14 RF3932 900MHz Evaluation Board Schematic 900MHz Evaluation Board Bill of Materials Component 12 of 14 Value Manufacturer Part Number C1, C2, C10, C11 68pF ATC ATC100B680JT C3,C14 0.1F Murata GRM32NR72A104KA01L C4,C13 4.7F Murata GRM55ER72A475KA01L C6 18pF ATC ATC800A180JT C7 15pF ATC ATC800A150JT C8 6.8pF ATC ATC100B6R8CT C9 2.0pF ATC ATC100B2R0CT C12 330F Panasonic EEU-FC2A331 C5 100F Panasonic ECE-V1HA101UP R1 10 Panasonic ERJ-8GEYJ100V 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120406 RF3932 900MHz Evaluation Board Layout Device Impedances Frequency (MHz) Z Source () Z Load ( 880 1.16 + j1.1 12.68 + j6.5 900 1.30 + j1.5 13.30 + j7.2 920 1.60 + j1.6 14.00 + j7.9 Note: Device impedances reported are the measured evaluation board impedances chosen for a trade-off of efficiency, peak power, and linearity performance across the entire frequency bandwidth. DS120406 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 13 of 14 RF3932 Device Handling/Environmental Conditions GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance trade off. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. 14 of 14 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120406