RFD4N06L, RFD4N06LSM Data Sheet 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs File Number 2837.1 Features • 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages. Formerly developmental type TA09520. • rDS(ON) = 0.600Ω • Design Optimized for 5 Volt Gate Drive • Can be Driven Directly From Q-MOS, N-MOS, or TTL Circuits • SOA is Power Dissipation Limited • 175oC Rated Junction Temperature • Logic Level Gate • High Input Impedance • Related Literature Ordering Information PART NUMBER June 1999 PACKAGE BRAND RFD4N06L TO-251AA RFD4N06L RFD4N06LSM TO-252AA RFD4N06LSM - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) GATE SOURCE 6-189 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFD4N06L, RFD4N06LSM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derated above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg RFD4N06L RFD4N06LSM 60 60 ±10 4 10 30 0.20 -55 to 175 UNITS V V V A A W W/oC oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 60 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 1 - 2.5 V TC = 25oC, VDS = 50V, VGS = 0V TC = 125oC, VDS = 50V, VGS = 0V - - 1 µA - - 50 µA VGS = 10V, VDS = 0V - - 100 nA ID = 1A, VGS = 5V - - 0.8 V ID = 2A, VGS = 5V - - 2.0 V ID = 4A, VGS = 7.5V - - 4.0 V ID = 1A, VGS = 5V - - 0.600 Ω - - 4.5 V - - 20 ns - - 130 ns td(OFF) - - 40 ns tf - - 160 ns - - 8 nC - - 5 nC Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Drain to Source On Voltage (Note 2) VDS(ON) Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) rDS(ON) V(plateau) VDS = 15V, ID = 4A Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate Charge at 5V Threshold Gate Charge Thermal Resistance Junction to Case VDD = 30V, ID = 1A, RGS = 6.25Ω, VGS = 5V Qg(TOT) VGS = 0-10V Qg(5) VGS = 0-5V Qg(TH) VGS = 0-1V VDD = 48V, ID = 2A, RL = 24Ω RθJC - - 1 nC - - 5 oC/W Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 1A - - 1.4 V ISD = 2A, dISD/dt = 100A/µs - 150 - ns NOTES: 2. Pulsed: pulse duration = 300µs max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 6-190 RFD4N06L, RFD4N06LSM Unless Otherwise Specified 1.2 5 1.0 4 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 3 2 1 0.2 0 0 25 50 75 100 125 0 25 150 50 75 100 125 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 1.0 TJ = MAX RATED TC = 25oC PULSE DURATION = 80µs TC = 25oC 12 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 OPERATION IN THIS AREA LIMITED BY rDS(ON) VGS = 10V VGS = 7.5V 10 8 6 VGS = 5V 4 4.5V 4V 3.5V 3V 2.5V 2V 7 2 0.1 1 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 100 1 2 3 4 5 6 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. SATURATION CHARACTERISTICS 1.6 8 VGS = 5V 1.4 PULSE DURATION = 80µs VDS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 7 rDS(ON), DRAIN TO SOURCE ON RESISTANCE(Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 6 TC = 25oC 5 TC = -40oC 4 TC = 125oC 3 2 TC = 125oC 1 0 150 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 6-191 TC = 125oC 1.0 0.8 TC = 25oC 0.6 TC = -40oC 0.4 0.2 TC = -40oC 1 1.2 6 0 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT RFD4N06L, RFD4N06LSM Typical Performance Curves 2 VGS = 5V, ID = 2A NORMALIZED GATE 1.5 THRESHOLD VOLTAGE 1 0.5 0 -50 0 50 100 1.5 1 0.5 0 -50 200 150 VGS = VDS, ID = 250µA 0 TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 200 150 10 60 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 300 VDS, DRAIN TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 100 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 400 200 CISS 100 COSS CRSS 0 50 TJ, JUNCTION TEMPERATURE (oC) RL = 4Ω IG(REF) = 0.5mA VGS = 5V 45 8 GATE SOURCE VOLTAGE VDD = BVDSS VDD = BVDSS 30 6 4 0.75BVDSS 0.50BVDSS 0.25BVDSS 15 2 DRAIN SOURCE VOLTAGE 0 0 0 10 20 30 40 VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2 Unless Otherwise Specified (Continued) 50 20 VDS, DRAIN TO SOURCE VOLTAGE (V) IG(REF) IG(ACT) t, TIME (µs) 80 IG(REF) IG(ACT) NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 6-192 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS RFD4N06L, RFD4N06LSM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. 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