RFL1P08, RFL1P10 Semiconductor 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs July 1998 Features Description • 1A, -80V and -100V • Linear Transfer Characteristics These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • High Input Impedance Formerly developmental type TA9400. • rDS(ON) = 3.65Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Majority Carrier Device Symbol Ordering Information PART NUMBER PACKAGE D BRAND RFL1P08 TO-205AF RFL1P08 RFL1P10 TO-205AF RFL1P10 G NOTE: When ordering, include the entire part number. S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 6-1 File Number 1535.2 RFL1P08, RFL1P10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20KΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL RFL1P08 -80 -80 1 5 ±20 8.33 0.0667 -55 to 150 RFL1P10 -100 -100 1 5 ±20 8.33 0.0667 -55 to 150 UNITS V V A A V W W/oC oC 300 300 oC AUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS RFL1P08 -80 - - V RFL1P10 -100 Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250µA, VGS = 0 VGS = VDS, ID = 250µA -2 - -4 V VDS = Rated BVDSS, VGS = 0V - - -1 µA 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 125oC IGSS VGS = ±20V, VDS = 0 - - ±100 nA Drain to Source On-Voltage (Note 2) VDS(ON) ID = 1A, VGS = -10V - - -3.65 V Drain to Source On Resistance (Note 2) rDS(ON) ID = 1A, VGS = -10V (Figures 6, 7) - - 3.65 Ω ID ≈ 1A, VDD = -50V RG = 50Ω VGS = -10V RL = 47Ω (Figures 10, 11, 12) - 7 25 ns - 15 45 ns - 14 45 ns - 11 25 ns - - 150 pF - - 80 pF - - 30 pF 15 oC/W Gate to Source Leakage Current Turn-On Delay Time Rise Time td(ON) tr Turn-Off Delay Time Fall Time td(OFF) tf Input Capacitance CISS Output Capacitance COSS Reverse-Transfer Capacitance CRSS Thermal Resistance Junction to Case VGS = 0V, VDS = -25V f = 1MHz (Figure 9) RθJC - - Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = -1A - - -1.4 V ISD = -1A, dISD/dt = 50A/µs - 135 - ns NOTES: 2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by mazimum junction temperature. 6-2 RFL1P08, RFL1P10 Unless Otherwise Specified 1.2 -1.2 1.0 -1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 0.2 -0.8 -0.6 -0.4 -0.2 0 25 0 0 25 50 75 100 TC, CASE TEMPERATURE (oC) 125 150 4 TC = 25oC ID, DRAIN CURRENT (A) RFL1P10 0.10 RFL1P08 ID, DRAIN CURRENT (A) 1.0 150 PULSE DURATION = 80µs TC = 25oC VGS = -20V 2 VGS = -10V VGS = -8V VGS = -4V VGS = -7V 1 VGS = -6V VGS = -5V 10 100 VDS, DRAIN TO SOURCE (V) 1000 0 FIGURE 3. FORWARD BIAS OPERATING AREA -2 -3 -4 -1 VDS, DRAIN TO SOURCE VOLTAGE (V) -5 FIGURE 4. SATURATION CHARACTERISTICS 4 2.5 VDS = -10V PULSE DURATION = 80µs -40oC 2 1.5 125oC 1 0.5 0 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) VGS = -10V PULSE DURATION = 80µs 125oC 25oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) 125 3 0 1 100 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE OPERATION IN THIS AREA LIMITED BY RDS(ON) 0.01 75 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 10.0 50 3 25oC 2 -40oC 1 0 -10 FIGURE 5. TRANSFER CHARACTERISTICS 0 1 2 3 ID, DRAIN CURRENT (A) 4 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 6-3 5 RFL1P08, RFL1P10 Typical Performance Curves Unless Otherwise Specified (Continued) 1.4 2 1.3 VGS = -10V NORMALIZED GATE 1.5 THRESHOLD VOLTAGE (V) 1 0.5 ID = 250µA VDS = -5V 1.2 1.1 1.0 0.9 0.8 0.7 0 -50 0 50 100 0.6 -50 150 0 50 100 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 120 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 140 C, CAPACITANCE (pF) FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 100 160 CISS 100 80 60 COSS 40 CRSS 20 0 150 10 VDD = BVDSS VDD = BVDSS GATE SOURCE VOLTAGE RL = 50 IG(REF) = 0.095mA VGS = -10V 75 50 8 6 0.75BVDSS 0.50BVDSS 0.25BVDSS 25 4 2 DRAIN SOURCE VOLTAGE 0 0 -10 -20 -30 -40 VDS, DRAIN TO SOURCE VOLTAGE (V) -50 20 IG(REF) IG(ACT) t, TIME (µs) 80 0 IG(REF) IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(OFF) td(ON) tr 0 RL DUT VGS RG + 10% 10% VDS VDD tf VGS 0 90% 90% 10% 50% 50% PULSE WIDTH 90% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 6-4 VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE (mΩ) ID = 1A