[ /Title (RFM18 N08, RFM18 N10, RFP18N 08, RFP18N 10) /Subject (18A, 80V and 100V, 0.1 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN FO pdfmark RFM18N08, RFM18N10, RFP18N08, RFP18N10 Semiconductor 18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 18A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.100Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA17421. Ordering Information PART NUMBER PACKAGE BRAND RFM18N08 TO-204AA RFM18N08 RFM18N10 TO-204AA RFM18N10 RFP18N08 TO-220AB RFP18N08 RFP18N10 TO-220AB RFP18N10 Symbol D G NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-204AA JEDEC TO-220AB DRAIN (FLANGE) DRAIN (TAB) SOURCE DRAIN GATE SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 5-1 File Number 1446.1 RFM18N08, RFM18N10, RFP18N08, RFP18N10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . Tpkg RFM18N08 80 80 18 45 ±20 100 0.8 -55 to 150 RFM18N10 100 100 18 45 ±20 100 0.8 -55 to 150 RFP18N08 80 80 18 45 ±20 75 0.6 -55 to 150 RFP18N10 100 100 18 45 ±20 75 0.6 -55 to 150 UNITS V V A A V W W/oC oC 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP RFM18N08, RFP18N08 80 - - V RFM18N10, RFP18N10 100 - - V 2 - 4 V VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA ID = 18A, VGS = 10V, (Figures 6, 7) - - 0.100 Ω - - 1.8 V - 60 90 ns - 300 450 ns td(OFF) - 150 225 ns tf - 150 225 ns - - 1700 pF - - 750 pF - - 300 pF Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current SYMBOL BVDSS TEST CONDITIONS ID = 250µA, VGS = 0V VGS(TH) VGS = VDS, ID = 250µA, (Figure 8) IDSS IGSS Drain to Source On Resistance (Note 2) rDS(ON) Drain to Source On Voltage (Note 2) VDS(ON) ID = 18A, VGS = 10V Turn-On Delay Time VDD = 50V, ID ≈ 9A, RG = 50Ω, VGS = 10V, RL = 5.5Ω (Figures 10, 11, 12) td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse-Transfer Capacitance CRSS Thermal Resistance Junction to Case VDS = 25V, VGS = 0V, f = 1MHz, (Figure 9) RθJC MAX UNITS RFM18N08, RFM18N10 - - 1.25 oC/W RFP18N08, RFP18N10 - - 1.67 oC/W Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 9A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 150 - ns NOTES: 2. Pulse test: width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. 5-2 RFM18N08, RFM18N10, RFP18N08, RFP18N10 Typical Performance Curves Unless Otherwise Specified 20 1.2 POWER DISSIPATION MULTIPLIER 18 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 14 RFP18N08, RFP18N10 12 10 0.2 0 RFM18N08, RFM18N10 16 8 6 4 2 0 50 100 0 25 150 50 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 100 125 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 35 100 DC 10 TJ = MAX RATED TC = 25oC CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE OP ER AT IO OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) VG = 20V 30 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT 75 TC, CASE TEMPERATURE (oC) N 1 VG = 10V VG = 8V 25 VG = 7V 20 PULSE DURATION = 80µs DUTY CYCLE ≤ 2% TC = 25oC 15 10 VG = 6V 5 VG = 5V VG = 4V 0 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 0 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 3 4 5 6 VDS, DRAIN TO SOURCE (V) 8 7 0.14 VDS = 10V 35 PULSE DURATION = 80µs DUTY CYCLE ≤ 2% o 30 TC = 25 C -40oC 25oC 125oC 25 20 15 10 125oC 5 -40oC 1 2 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 125oC 0.12 rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT 2 FIGURE 4. SATURATION CHARACTERISTICS 40 0 0 1 9 10 FIGURE 5. TRANSFER CHARACTERISTICS 0.10 0.08 0.06 -40oC 0.04 PULSE DURATION = 80µs ≤ 2% 0.02 DUTY CYCLE TC = 25oC VGS = 10V 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 5-3 25oC 30 35 RFM18N08, RFM18N10, RFP18N08, RFP18N10 Typical Performance Curves Unless Otherwise Specified (Continued) 1.4 1.5 1.0 0.5 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 1 0.8 0.6 -50 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) VDS, DRAIN TO SOURCE VOLTAGE (V) 100 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 2000 1600 CISS 1200 800 COSS 400 CRSS 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 2400 0 1.2 75 VDD = BVDSS GATE SOURCE VOLTAGE RL = 5.56Ω IG(REF) = 1mA VGS = 10V VDD = BVDSS 8 6 50 0.75BVDSS 4 0.50BVDSS 25 0.25BVDSS 2 DRAIN SOURCE VOLTAGE 0 0 I 20 G(REF) IG(ACT) 60 10 t, TIME (µs) I 80 G(REF) IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-4 VGS, GATE TO SOURCE VOLTAGE (V) 0 -50 C, CAPACITANCE (pF) VGS = VDS ID = 250µA VGS = 10V ID = 18A PULSE DURATION = 80µs NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.0 RFM18N08, RFM18N10, RFP18N08, RFP18N10 Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 12. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 IG(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS 5-5