ROHM RFN20T2D

Data Sheet
Super Fast Recovery Diode
RFN20T2D
Dimensions (Unit : mm)
Applications
General rectification
Structure
4.5±0.3
0.1
2.8±0.2
0.1
10.0±0.3
0.1
Features
1)Cathode common Dual type. (TO-220)
2)Low VF
8.0±0.2
12.0±0.2
14.0±0.5
1.2
1.3
0.8
13.5MIN
5.0±0.2
RFN20
T2D ①
Construction
Silicon epitaxial planer
15.0±0.4
0.2
8.0
3)Low switching loss
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : TO220FN
①
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Repetitive peak reverse voltage
VR
Reverse voltage
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
dot (year week factory)
Conditions
Duty≤0.5
Direct voltage
60Hz half sin wave, Resistance load,
Tc=100°C
1/2Io at per diode
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Limits
200
200
Unit
V
V
20
A
100
A
150
55 to 150
C
C
Conditions
Min.
Typ.
Max.
Unit
IF=10A
－
0.9
0.98
V
μA
Reverse current
IR
VR=200V
－
0.01
10
Reverse recovery time
trr
IF=0.5A,IR=1A,Irr=0.25×I R
－
16
30
ns
Rth(j-c)
junction to case
－
－
2.0
°C/W
Thermal Resistance
* per diode
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1/4
2011.12 - Rev.A
100000
100
10
Tj=150°C
1
Tj=25°C
0.1
Tj=75°C
Tj=125°C
Tj=150°C
10000
Tj=125°C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Data Sheet
RFN20T2D
1000
Tj=75°C
100
Tj=25°C
10
0.01
per diode
per diode
1
0.001
0
500
1000
0
1500
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
50
100
200
1000
1000
FORWARD VOLTAGE:VF(mV)
f=1MHz
Tj=25°C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
150
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
Tj=25°C
IF=10A
n=20pcs
per diode
950
900
AVE:898.3mV
850
per diode
10
800
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
300
Tj=25°C
VR=200V
n=20pcs
per diode
10
AVE:18.0nA
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
100
Ta=25°C
f=1MHz
VR=0V
n=10pcs
per diode
280
260
240
AVE:257.4pF
220
1
200
IR DISPERSION MAP
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Ct DISPERSION MAP
2/4
2011.12 - Rev.A
300
30
250
25
REVERSE RECOVERY TIME:trr(ns)
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RFN20T2D
200
AVE:218.5A
150
100
1cyc
IFSM
50
Tj=25°C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
per diode
20
15
AVE:15.5ns
10
5
8.3ms
0
0
trr DISPERSION MAP
IFSM DISPERSION MAP
1000
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1000
100
10
IFSM
8.3ms
IFSM
time
100
8.3ms
1cyc.
1
10
1
10
100
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
30
10
Rth(j-a)
No break at 30kV
25
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
No break at 30kV
20
15
10
5
0
C=200pF
R=0Ω
1
0.1
0.001
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Rth(j-c)
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
3/4
2011.12 - Rev.A
Data Sheet
RFN20T2D
40
0V
D.C.
35
Io
0A
35
VR
t
30
D=0.8
D.C.
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
T
30
D=0.5
half sin wave
25
D=0.2
20
D=0.1
15
D=0.05
10
D=0.8
25
D=0.5
20
half sin wave
15
D=0.2
10
D=0.1
5
5
D=t/T
VR=100V
Tj=150°C
D=0.05
0
0
0
5
10
15
20
25
30
0
35
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
30
60
90
120
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
4/4
2011.12 - Rev.A
Notice
Notes
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R1120A