RFP2N08, RFP2N10 Semiconductor 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2A, 80V and 100V • Linear Transfer Characteristics These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • High Input Impedance Formerly developmental type TA09282. • rDS(ON) 1.05Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information G PART NUMBER PACKAGE BRAND RFP2N08 TO-220AB RFP2N08 RFP2N10 TO-220AB RFP2N10 S NOTE: When ordering, use entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © Harris Corporation 1998 5-1 File Number 2883.1 RFP2N08, RFP2N10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg RFP2N08 80 80 2 5 ±20 25 0.2 -55 to 150 RFP2N10 100 100 2 5 ±20 25 0.2 -55 to 150 UNITS V V A A V W W/oC oC 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS RFP2N10 100 - - V RFP2N08 80 - - V VGS = VDS , ID = 250µA (Figure 8) 2 - 4 V VDS = Rated BVDSS , TC = 25oC - - 1 µA VDS = 0.8 x Rated BVDSS , TC = 125oC - - 25 µA VGS = ±20V, VDS = 0 - - ±100 nA Drain to Source Breakdown Voltage Gate Threshold Voltage SYMBOL BVDSS VGS(TH) Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS TEST CONDITIONS ID = 250µA, VGS = 0 Drain to Source On Resistance (Note 2) rDS(ON) ID = 2A, VGS = 10V (Figures 6, 7) - - 1.05 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 2A, VGS = 10V - - 2.1 V ID ≈ 1A, VDD = 50V, RG = 50Ω, RL = 25Ω, VGS = 10V (Figures 10, 11, 12) - 17 25 ns - 30 45 ns td(OFF) - 30 45 ns tf - 17 25 ns - - 200 pF - - 80 pF - - 25 pF Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse-Transfer Capacitance CRSS Thermal Resistance Junction to Case VGS = 0V, VDS = 25V, f =1MHz (Figure 9) RθJC - - 5 oC/W MIN TYP MAX UNITS 1.4 V - ns Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time VSD trr TEST CONDITIONS ISD = 2A - ISD = 2A, dISD/dt = 50A/µs - NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 5-2 100 RFP2N08, RFP2N10 Typical Performance Curves Unless otherwise Specified 2.4 2.2 2.0 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 0 25 150 50 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 75 100 125 TC, CASE TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 OPERATION IN THIS AREA LIMITED BY rDS(ON) 150 PULSE DURATION = 80µs TC = 25oC TJ = MAX RATED TC = 25oC ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) VGS = 10V 1 0.10 RFP2N010 RFP2N08 VGS = 9V VGS = 20V 2.5 VGS = 8V VGS = 7V 2.0 VGS = 6V 1A VGS = 5V VGS = 4V 0.01 1 10 100 1000 0 1 VDS , DRAIN TO SOURCE VOLTAGE (V) VDS = 10V PULSE DURATION = 250µs TC = 25oC 2.5 TC = 125oC 2.0 TC = 40oC 1.5 TC = -40oC 1.0 TC = 25oC 0.5 0 1.4 10 TC = 125oC 1.2 1.0 TC = 25oC 0.8 0.6 TC = -40oC 0.4 0.2 VGS = 10V PULSE DURATION = 250µs TC = 125oC 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) 9 FIGURE 4. SATURATION CHARACTERISTICS rDS(ON) , DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 2 3 4 5 6 7 8 VDS , DRAIN TO SOURCE VOLTAGE (V) 0 10 FIGURE 5. TRANSER CHARACTERISTICS 0.5 1.0 1.5 ID , DRAIN CURRENT (A) 2.0 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-3 2.5 RFP2N08, RFP2N10 Typical Performance Curves Unless otherwise Specified (Continued) 2.0 1.4 NORMALIZED GATE THRESHOLD VOLTAGE 1.5 1.0 0.5 0 -50 0 50 100 150 VGS = VDS, ID = 250µA 1.2 1.0 0.8 0.6 -50 200 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE C, CAPACITANCE (pF) VDS , DRAIN TO SOURCE VOLTAGE (V) 240 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 200 160 120 CISS 80 COSS 40 0 0 CRSS 10 200 100 10 BVDSS VDDD = VDSS 75 GATE TO SOURCE VOLTAGE 8 VDSS = VDSS 6 RL = 50Ω IG(REF) = 0.095mA VGS = 10V 50 0.75 VDSS 0.50 VDSS 0.25 VDSS 25 4 0.75 VDSS 0.50 VDSS 0.25 VDSS 2 0 20 30 40 50 60 VDS , DRAIN TO SOURCE VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 2A, VGS = 10V 0 70 20 IG(REF) TIME (µs) IG(ACT) 80 IG(REF) IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 0 10% DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4