[ /Title () /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark RFM3N45, RFM3N50, RFP3N45, RFP3N50 Semiconductor Data Sheet 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. October 1998 Features • 3A, 450V and 500V • rDS(ON) = 3Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Formerly developmental type TA17405. Ordering Information PART NUMBER File Number 1384.2 G PACKAGE BRAND RFM3N45 TO-204AA RFM3N45 RFM3N50 TO-204AA RFM3N50 RFP3N45 TO-220AB RFP3N45 RFP3N50 TO-220AB RFP3N50 S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFM3N45, RFM3N50, RFP3N45, RFP3N50 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM3N45 RFM3N50 RFP3N45 RFP3N50 UNITS Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . VDS 450 500 450 500 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . VDGR 450 500 450 500 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . ID 3 3 3 3 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . IDM 5 5 5 5 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD 75 75 60 60 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.48 0.48 W/oC Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . Tpkg 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL MIN TYP MAX UNITS RFM3N45, RFP3N45 450 - - V RFM3N50, RFP3N50 500 - - V 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(TH) Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS TEST CONDITIONS ID = 250µA, VGS = 0V VGS = VDS, ID = 250µA, (Figure 7) Drain to Source On Resistance (Note 2) rDS(ON) ID = 3A, VGS = 10V, (Figures 5, 6) - - 3 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 3A, VGS = 10V - - 9.0 V VDD = 250V, ID ≈ 1.5A, RG = 50Ω, VGS = 10V RL = 165Ω (Figures 10, 11, 12) - 30 45 ns - 40 60 ns td(OFF) - 90 135 ns tf - 50 75 ns - - 750 pF Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS - - 150 pF Reverse Transfer Capacitance CRSS - - 100 pF Thermal Resistance, Junction to Case RθJC RFM3N45, RFM3N50 - - 1.67 oC/W RFP3N45, RFP3N50 - - 2.083 oC/W VDS = 25V, VGS = 0V, f = 1MHz Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Reverse Recovery Time VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 1.5A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 800 - ns NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 2 RFM3N45, RFM3N50, RFP3N45, RFP3N50 Typical Performance Curves Unless Otherwise Specified 3.5 3 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 RFM3N45, RFM3N50 2.5 RFP3N45, RFP3N50 2 1.5 1 0.5 0.2 0 25 0 0 25 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 4 TC = 25oC (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) VGS = 10V VGS = 6V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 10 ID (MAX.) CONTINUOUS DC OP ER 1 AT IO OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.1 1 10 N 3 PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 2 VGS = 5V 1 VGS = 4V 100 0 1000 0 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 6 3 TC = -40oC TC = 25oC TC = 125oC 1 0 20 25 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE < 2% 5 ON RESISTANCE (Ω) VDS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 2 15 FIGURE 4. SATURATION CHARACTERISTICS rDS(ON), DRAIN TO SOURCE IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 4 10 VDS, DRAIN TO SOURCE VOLTAGE (V) TC = 125oC 4 3 TC = 25oC 2 TC = -40oC 1 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 3 10 0 1 2 3 4 5 6 ID, DRAIN CURRENT (A) FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 7 RFM3N45, RFM3N50, RFP3N45, RFP3N50 Typical Performance Curves Unless Otherwise Specified (Continued) 1.4 ID = 3A, VGS =10V PULSE DURATION = 80µs 1.3 NORMALIZED GATE THRESHOLD VOLTAGE 1.5 1 0.5 VDS = 10V ID = 250µA 1.2 1.1 1.0 0.9 0.8 0.7 0 -50 0 50 100 150 0.6 -50 200 0 TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE C, CAPACITANCE (pF) VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 600 500 CISS 400 300 200 100 COSS CRSS 0 0 10 20 30 40 50 60 70 80 100 150 200 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 800 700 50 TJ, JUNCTION TEMPERATURE(oC) 90 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 500 VDD = BVDSS 375 GATE SOURCE VOLTAGE 250 RL = 167Ω IG(REF) = 0.45mA VGS = 10V 125 0.75BVDSS 0.50BVDSS 0.25BVDSS 8 VDD = BVDSS 6 4 2 DRAIN SOURCE VOLTAGE 0 0 20 IG(REF) IG(ACT) t, TIME (µs) 80 IG(REF) IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4 FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2 RFM3N45, RFM3N50, RFP3N45, RFP3N50 Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 10% 0 90% DUT VGS VGS 0 10% VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2µF 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS FIGURE 11. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G IG(REF) 0 S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 13. GATE CHARGE TEST CIRCUIT 5 IG(REF) 0 FIGURE 14. GATE CHARGE WAVEFORMS [ /Title () /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark RFM3N45, RFM3N50, RFP3N45, RFP3N50 Semiconductor Data Sheet 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. October 1998 Features • 3A, 450V and 500V • rDS(ON) = 3Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Formerly developmental type TA17405. Ordering Information PART NUMBER File Number 1384.2 G PACKAGE BRAND RFM3N45 TO-204AA RFM3N45 RFM3N50 TO-204AA RFM3N50 RFP3N45 TO-220AB RFP3N45 RFP3N50 TO-220AB RFP3N50 S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFM3N45, RFM3N50, RFP3N45, RFP3N50 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM3N45 RFM3N50 RFP3N45 RFP3N50 UNITS Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . VDS 450 500 450 500 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . VDGR 450 500 450 500 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . ID 3 3 3 3 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . IDM 5 5 5 5 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD 75 75 60 60 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.48 0.48 W/oC Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . Tpkg 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL MIN TYP MAX UNITS RFM3N45, RFP3N45 450 - - V RFM3N50, RFP3N50 500 - - V 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(TH) Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS TEST CONDITIONS ID = 250µA, VGS = 0V VGS = VDS, ID = 250µA, (Figure 7) Drain to Source On Resistance (Note 2) rDS(ON) ID = 3A, VGS = 10V, (Figures 5, 6) - - 3 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 3A, VGS = 10V - - 9.0 V VDD = 250V, ID ≈ 1.5A, RG = 50Ω, VGS = 10V RL = 165Ω (Figures 10, 11, 12) - 30 45 ns - 40 60 ns td(OFF) - 90 135 ns tf - 50 75 ns - - 750 pF Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS - - 150 pF Reverse Transfer Capacitance CRSS - - 100 pF Thermal Resistance, Junction to Case RθJC RFM3N45, RFM3N50 - - 1.67 oC/W RFP3N45, RFP3N50 - - 2.083 oC/W VDS = 25V, VGS = 0V, f = 1MHz Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Reverse Recovery Time VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 1.5A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 800 - ns NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 2 RFM3N45, RFM3N50, RFP3N45, RFP3N50 Typical Performance Curves Unless Otherwise Specified 3.5 3 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 RFM3N45, RFM3N50 2.5 RFP3N45, RFP3N50 2 1.5 1 0.5 0.2 0 25 0 0 25 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 4 TC = 25oC (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) VGS = 10V VGS = 6V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 10 ID (MAX.) CONTINUOUS DC OP ER 1 AT IO OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.1 1 10 N 3 PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 2 VGS = 5V 1 VGS = 4V 100 0 1000 0 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 6 3 TC = -40oC TC = 25oC TC = 125oC 1 0 20 25 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE < 2% 5 ON RESISTANCE (Ω) VDS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 2 15 FIGURE 4. SATURATION CHARACTERISTICS rDS(ON), DRAIN TO SOURCE IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 4 10 VDS, DRAIN TO SOURCE VOLTAGE (V) TC = 125oC 4 3 TC = 25oC 2 TC = -40oC 1 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 3 10 0 1 2 3 4 5 6 ID, DRAIN CURRENT (A) FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 7 RFM3N45, RFM3N50, RFP3N45, RFP3N50 Typical Performance Curves Unless Otherwise Specified (Continued) 1.4 ID = 3A, VGS =10V PULSE DURATION = 80µs 1.3 NORMALIZED GATE THRESHOLD VOLTAGE 1.5 1 0.5 VDS = 10V ID = 250µA 1.2 1.1 1.0 0.9 0.8 0.7 0 -50 0 50 100 150 0.6 -50 200 0 TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE C, CAPACITANCE (pF) VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 600 500 CISS 400 300 200 100 COSS CRSS 0 0 10 20 30 40 50 60 70 80 100 150 200 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 800 700 50 TJ, JUNCTION TEMPERATURE(oC) 90 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 500 VDD = BVDSS 375 GATE SOURCE VOLTAGE 250 RL = 167Ω IG(REF) = 0.45mA VGS = 10V 125 0.75BVDSS 0.50BVDSS 0.25BVDSS 8 VDD = BVDSS 6 4 2 DRAIN SOURCE VOLTAGE 0 0 20 IG(REF) IG(ACT) t, TIME (µs) 80 IG(REF) IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4 FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2 RFM3N45, RFM3N50, RFP3N45, RFP3N50 Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 10% 0 90% DUT VGS VGS 0 10% VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2µF 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS FIGURE 11. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G IG(REF) 0 S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 13. GATE CHARGE TEST CIRCUIT 5 IG(REF) 0 FIGURE 14. GATE CHARGE WAVEFORMS