[ /Title (RFM6 N45, RFP6N4 5, RFP6N5 0) /Subject (6A, 450V and 500V, 1.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM6N45, RFP6N45, RFP6N50 Semiconductor 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 6A, 450V and 500V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • High Input Impedence Formerly developmental type TA17425. • rDS(ON) = 1.250Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER PACKAGE G BRAND RFM6N45 TO-204AA RFM6N45 RFP6N45 TO-204AA RFP6N45 RFP6N50 TO-220AB RFP6N50 S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-204AA JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 5--1 File Number 1494.2 RFM6N45, RFP6N45, RFP6N50 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kW) (Note 1). . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . Tpkg RFM6N45 450 450 6 15 ±20 100 0.8 -55 to 150 RFP6N45 450 450 6 15 ±20 75 0.6 -55 to 150 RFP6N50 500 500 6 15 ±20 75 0.6 -55 to 150 UNITS V V A A V W W/oC oC 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS RFM6N45, RFP6N45 450 - - V RFP6N50 500 - - V VGS = VDS, ID = 250µA (Figure 8) 2 - 4 V VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA ID = 6A, VGS = 10V, (Figures 6, 7) - - 1.250 Ω ID = 6A, VGS = 10V - - 7.50 V ID = 3A, VDD = 250V, RG = 50Ω, VGS = 10V, RL = 81Ω (Figures 10, 11, 12) - 15 45 ns - 40 80 ns td(OFF) - 190 300 ns tf - 60 100 ns - - 1500 pF - - 250 pF - - 200 pF 1.25 oC/W 1.67 oC/W Drain to Source Breakdown Voltage Gate Threshold Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance(Note 2 ) Drain to Source On-Voltage (Note 2) Turn-On Delay Time Rise Time SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) VDS(ON) td(ON) tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Thermal Resistance Junction to Case RθJC TEST CONDITIONS ID = 250µA, VGS = 0V VGS = 0V, VDS = 25V f = 1MHz, (Figure 9) RFM6N45 - - RFP6N45, RFP6N50 Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 3A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 800 - ns NOTES: 2. Pulsed test: Pulse width ≤ 300µs duty cycle ≤ 2% 3. Repetitive rating: pulse width limited by maximum junction temperature. 5-2 RFM6N45, RFP6N45, RFP6N50 Typical Performance Curves 7 1.0 6 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 5 4 3 2 1 0.2 0 0 50 100 0 25 150 50 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100W OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) PULSE DURATION = 80µs VGS = 7 V to 10V DUTY CYCLE ≤ 2% 10 TC = 25oC 150 VGS = 6V VGS = 5V 8 6 4 2 VDSS (Max) 450V RFM6N45, RFP6N45 VDSS (MAX) 500V RFP6N50 0.1 VGS = 4V 0 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 1000 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 2 6 8 10 12 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 14 FIGURE 4. SATURATION CHARACTERISTICS 2.4 14 VDS = 20V 80µs PULSE TEST DUTY CYCLE ≤ 2% rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) ID(ON), DRAIN TO SOURCE CURRENT (A) 125 12 DC OPERATION 1 100 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE TC = 25oC 75W 75 TC, CASE TEMPERATURE (oC) 10 6 25oC 125oC 2 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 2.0 1.6 125oC 1.2 25oC 0.8 -40oC 0.4 -40oC 0 0 0 2 4 VGS, GATE TO SOURCE VOLTAGE (V) 6 FIGURE 5. TRANSFER CHARACTERISTICS 0 2 4 6 10 8 ID, DRAIN CURRENT (A) 12 14 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 5-3 RFM6N45, RFP6N45, RFP6N50 Typical Performance Curves (Continued) 1.5 NORMALIZED GATE THRESHOLD VOLTAGE 2.5 1.5 1.0 0.5 0.5 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 0 -50 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 500 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 CISS 600 COSS 200 CRSS 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 150 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 1400 0 50 100 TC, JUNCTION TEMPERATURE (oC) 10 VDD = BVDSS 375 GATE SOURCE VOLTAGE 250 RL = 83Ω IG(REF) = 1.1mA VGS = 10V 125 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 8 VDD = BVDSS 6 4 2 DRAIN SOURCE VOLTAGE 0 0 50 VGS, GATE TO SOURCE VOLTAGE (V) -50 C, CAPACITANCE (pF) VGS = VDS ID = 250µA ID = 6A VGS = 10V ON RESISTANCE NORMALIZED DRAIN TO SOURCE 3.5 I 20 G(REF) IG(ACT) t, TIME (µs) I 80 G(REF) IG(ACT) NOTE: Refer to Harris Applications Notes AN7254 and AN7260 FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4