RFH10N45, RFH10N50 Semiconductor Data Sheet 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs October 1998 File Number 1629.2 Features • 10A, 450V and 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.600Ω (RFH10 power field effect transistors designed for applications such • Related Literature as switching regulators, switching converters, motor drivers, N45, - TB334 “Guidelines for Soldering Surface Mount relay drivers, and drivers for high power bipolar switching RFH10N Components to PC Boards” transistors requiring high speed and low gate drive power. 50) These types can be operated directly from integrated circuits. /Subject Symbol Formerly developmental type TA17435. (10A, D 450V Ordering Information and PART NUMBER PACKAGE BRAND G 500V, RFH10N45 TO-218AC RFH10N45 0.600 S RFH10N50 TO-218AC RFH10N50 Ohm, N-Chan- NOTE: When ordering, include the entire part number. nel Power Packaging MOSJEDEC TO-218AC FETs) SOURCE /Author DRAIN () GATE /Keywords (Harris Semiconductor, DRAIN (FLANGE) N-Channel Power MOSFETs, TO218AC) /Creator () /DOCIN FO pdfmark 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFH10N45, RFH10N50S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFH10N45 RFH10N50 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 450 500 V Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR 450 500 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 10 10 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 20 20 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 150 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL Drain to Source Breakdown Voltage BVDSS TEST CONDITIONS MIN TYP MAX UNITS ID = 250µA, VGS = 0V RFH10N45 450 V RFH10N50 500 V Gate to Threshold Voltage VGS(TH) Zero-Gate Voltage Drain Current Gate to Source Leakage Current IDSS IGSS VGS = VDS, ID = 250µA (Figure 8) 2 - 4 V VDS = Rated BVDSS - - 1 µA VDS = 0.8 x Rated BVDSS, TC = 125oC - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source On Voltage (Note 2) VDS(ON) ID = 10A, VGS = 10V - - 6.0 V Drain to Source On Resistance (Note 2) rDS(ON) ID = 10A, VGS = 10V (Figures 6, 7) - - 0.600 Ω ID ≈ 5A, VDS = 250V, RG = 50Ω, RL = 50Ω, VGS = 10V (Figures 10, 11, 12) - 26 60 ns - 50 100 ns td(OFF) - 525 900 ns tf - 105 180 ns - - 3000 pF - - 600 pF - - 200 pF Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Thermal Resistance, Junction to Case VGS = 0V, VDS = 25V f = 1MHz (Figure 9) - - 0.83 oC/W MIN TYP MAX UNITS ISD = 10A - - 1.4 V ISD = 10A, dISD/dt = 100A/µs - 950 - ns RθJC Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time VSD trr TEST CONDITIONS NOTES: 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. 2 RFH10N45, RFH10N50 Typical Performance Curves 1.2 12 POWER DISSIPATION MULTIPLIER 11 1.0 ID, DRAIN CURRENT (A) 10 0.8 0.6 0.4 9 8 7 6 5 4 3 2 0.2 1 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 0 25 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 100 TJ = MAX RATED DC 1 VDS(MAX) = 450V RFH10N45 VDS(MAX) = 500V VGS = 5V VGS = 10V, 8V 16 1 12 VGS = 4V 8 VGS = 3.5V 4 VGS = 3V 10 100 VDS, DRAIN TO SOURCE (V) 1000 6 4 8 10 12 VDS, DRAIN TO SOURCE VOLTAGE (V) 2 0 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 14 FIGURE 4. SATURATION CHARACTERISTICS 1.2 24 VGS = 10V PULSE DURATION = 80µs VDS = 25V PULSE DURATION = 80µs 16 12 8 125oC 4 -40oC 25oC 0 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 3 6 7 1.0 RESISTANCE (Ω) 20 rDS(ON), DRAIN TO SOURCE ON IDS(ON), DRAIN TO SOURCE CURRENT (A) VGS = 4.5V VGS = 6V RFH10N50 0.1 150 PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 24 ID MAX CONTINUOUS 10 75 100 125 TC, CASE TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE TC = 25oC OPERATION IN THIS AREA LIMITED BY rDS(ON) 50 0.8 125oC 0.6 0.4 25oC 0.2 0 -40oC 0 4 8 12 16 20 ID, DRAIN CURRENT (A) 24 28 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT RFH10N45, RFH10N50 Typical Performance Curves (Continued) 1.4 3.0 ID = 250µA VGS = 10V NORMALIZED GATE 2.5 1.3 THRESHOLD VOLTAGE 2.0 1.5 1.0 1.2 1.1 1.0 0.9 0.8 0.5 0.7 -50 0 50 100 0.6 -50 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE TO THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE C, CAPACITANCE (PF) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 3000 CISS 2000 1000 COSS CRSS 0 VDS, DRAIN TO SOURCE VOLTAGE (V) 500 4000 0 150 0 50 100 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) 10 8 375 VDD = BVDSS 250 GATE SOURCE VOLTAGE RL = 50Ω IG(REF) = 2.1mA VGS = 10V VDD = BVDSS 6 4 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS 125 2 DRAIN SOURCE VOLTAGE 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 I (REF) 20 G IG (ACT) 50 VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 10A t, TIME (µs) I (REF) 80 G IG (ACT) NOTE: Refer to Harris Applications Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 4 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS