STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET™ Power MOSFET PRELIMINARY DATA Features Type VDSS STRH40N25FSY3 250V ■ Low RDS(on) ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge ■ Light weight ■ 100% avalanche tested ■ Application oriented characterization ■ Hermetically sealed ■ Heavy ion SOA ■ 100kRad TID ■ SEL & SEGR with 34Mev/cm²/mg LET ions TO-254AA Internal schematic diagram Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to improve immunity to space effect. It is therefore suitable as power switch in mainly high-efficiency DC-DC converters and Motor Control applications. It is also intended for any application with low gate charge drive requirements. Applications ■ Satellite ■ High reliability applications Order codes Part number Marking Package Packaging (1) RH40N25FSY1 TO-254AA Individual strip pack (2) RH40N25FSY3 TO-254AA Individual strip pack STRH40N25FSY1 STRH40N25FSY3 1. Mil temp range 2. Space flights parts (full ESA flow screening) March 2007 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/13 www.st.com 13 Contents STRH40N25FSY3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Post-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/13 ................................................ 9 STRH40N25FSY3 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings (pre-irradiation) Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 250 V VGS Gate-source voltage ±16 V Drain current (continuous) at TC= 25°C 36 A Drain current (continuous) at TC= 100°C 23 A Drain current (pulsed) 144 A Total dissipation at TC= 25°C 278 W 4 V/ns -55 to 150 °C 150 °C Value Unit 0.45 °C/W 0.21 °C/W 48 °C/W Value Unit ID (1) ID (1) IDM (2) PTOT (1) dv/dt (3) Tstg Tj Peak diode recovery voltage slope Storage temperature Max. operating junction temperature 1. Rated according to the Rthj-case 2. Pulse width limited by safe operating area 3. ISD < 40A, di/dt < 400A/µs, VDD = 80% V(BR)DSS Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthc-s Case-to-sink Rthj-amb Thermal resistance junction -amb Table 3. Symbol Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 40 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 320 mJ EAR Repetitive avalanche 25 mJ 3/13 Electrical characteristics 2 STRH40N25FSY3 Electrical characteristics (TCASE = 25°C unless otherwise specified) 2.1 Pre-irradiation Table 4. Symbol Parameter Test conditions Min. Typ. Max. Unit IDSS Zero gate voltage drain current (VGS = 0) 80% BVDss 10 µA IGSS Gate body leakage current (VDS = 0) VGS = ±16V ±100 nA BVDSS Drain-to-source breakdown voltage ID = 1mA, VGS = 0V 250 VGS(th) Gate threshold voltage VDS =VGS, ID = 1mA 2 RDS(on) Static drain-source on resistance VGS = 12V, ID = 20A Table 5. Symbol V 4.5 V 0.084 0.1 Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 0V, f=1MHz, VGS=12V 9100 650 45 Qg Qgs Qgd Total gate charge Gate-to-source charge Gate-to-drain (“Miller”) charge VDD = 200V, ID = 40A, VGS=12V 202 34 58 280 47 80 nC nC nC RG Gate input resistance f=1MHz Gate DC Bias=0 Test signal level=20mV open drain 1.4 3 Ω Table 6. Symbol td(on) tr td(off) tf 4/13 On/off states pF pF pF Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 125V, ID =40 A, RG = 4.7Ω, VGS = 12V Min. Typ. 33 80 123 145 Max Unit ns ns ns ns STRH40N25FSY3 Table 7. Symbol Electrical characteristics Source drain diode Parameter Test conditions ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 40A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 40A, di/dt = 100A/µs VDD= 50V, Tj = 150°C trr Qrr IRRM Min. Typ. Max Unit 36 144 A A 1.5 V 484 8.4 35 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2.2 Post-irradiation The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The technology is extremely resistant to assurance well functioning of the device inside the radiation environments. Every manufacturing lot is tested for total ionizing dose. (@Tj=25°C up to 100Krad (a)) Table 8. Symbol On/off states Parameter Test conditions Min. IDSS Zero gate voltage drain current 80% BVDss (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±16V BVDSS Drain-to-source breakdown voltage ID = 1mA, VGS = 0V 250 VGS(th) Gate threshold voltage VDS =VGS, ID = 1mA 2 RDS(on) Static drain-source on resistance VGS = 12V, ID = 20A Typ. Max. Unit 10 µA ±100 nA V 0.084 4.5 V 0.1 Ω a. According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec. 5/13 Electrical characteristics Table 9. STRH40N25FSY3 Single event effect, SOA(1) Ion Let (Mev/(mg/cm2)) Energy (MeV) Range (µm) VDS (V) @VGS0V Kr 34 316 43 250 Xe 55.9 459 43 244 1. Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect (SEE). Single event effect characterization is illustrated Table 10. Symbol Source drain diode Parameter Test conditions ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 40A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 40A, di/dt = 100A/µs VDD= 50V, Tj = 150°C trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 6/13 Min. Typ. Max Unit 484 8.4 35 36 144 A A 1.5 V ns µC A STRH40N25FSY3 Electrical characteristics 2.3 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics 7/13 Electrical characteristics STRH40N25FSY3 Figure 5. Gate charge vs. gate-source voltage Figure 7. Normalized BVDSS vs. temperature Figure 8. 8/13 Figure 6. Capacitance variations Static drain-source on resistance STRH40N25FSY3 Figure 9. Normalized gate threshold voltage vs. temperature Electrical characteristics Figure 10. Normalized on resistance vs. temperature Figure 11. Source drain-diode forward characteristics 9/13 Test circuit 3 STRH40N25FSY3 Test circuit Figure 12. Switching times test circuit for resistive load (1) 1. Max driver VGS slope = 1V/ns (no DUT) 10/13 STRH40N25FSY3 4 Package mechanical data Package mechanical data TO-254AA MECHANICAL DATA DIM. A B C D E F G H I J K L M N R1 R2 MIN. 13.59 13.59 20.07 6.32 1.02 3.53 16.89 mm. TYP MAX. 13.84 13.84 20.32 6.60 1.27 3.78 17.40 MIN. 0.535 0.535 0.790 0.249 0.040 0.139 0.665 1.14 0.035 6.86 0.89 0.045 0.150 0.150 14.50 3.05 0.510 0.570 0.120 0.71 1.0 1.65 MAX. 0.545 0.545 0.80 0.260 0.050 0.149 0.685 0.270 3.81 3.81 12.95 inch TYP. 0.025 0.040 0.065 11/13 Revision history 5 STRH40N25FSY3 Revision history Table 11. 12/13 Revision history Date Revision Changes 18-Dec-2006 1 First release 02-Mar-2007 2 Some values changed on Table 4 and Table 8 STRH40N25FSY3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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