4V Drive Pch MOSFET RRQ030P03 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance. 2) High Power Package. 3) High speed switching. (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) 0~0.1 0.3~0.6 (1) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Abbreviated symbol : UA zEquivalent circuit zApplications Switching (6) (5) ∗2 zPackaging specifications Package Taping TR Code Type (4) Basic ordering unit (pieces) ∗1 3000 RRQ030P03 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1)DRAIN (2)DRAIN (3)GATE (4)SOURCE (5)DRAIN (6)DRAIN zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain−source voltage VDSS −30 V Gate−source voltage VGSS ±20 V Parameter Drain current Continuous ID Pulsed IDP ±3 A ∗1 ±12 A Continuous IS −1 A Pulsed ISP ∗1 −12 A Total power dissipation PD ∗2 1.25 W Channel temperature Tch 150 °C Range of Storage temperature Tstg −55 to +150 °C Source current (Body diode) ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits Unit 100 °C / W ∗ When mounted on a ceramic board. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.03 - Rev.A Data Sheet RRQ030P03 zElectrical characteristics (Ta=25°C) Parameter Gate-source leakage Symbol Gate threshold voltage Typ. Max. Unit Conditions − − ±10 µA VGS=±20V, VDS=0V −30 − − V ID=−1mA,, VGS=0V IDSS − − −1 µA VDS=−30V, VGS=0V VGS(th) −1.0 − −2.5 V VDS=−10V, ID=−1mA − 55 75 mΩ ID=−3A, VGS=−10V − 85 115 mΩ ID=−1.5A, VGS=−4.5V IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Min. ∗ Static drain-source on-state resistance RDS(on) Foward transfer admittance Yfs Input capacitance − 95 125 mΩ ID=−1.5A, VGS=−4V 2.4 − − S VDS=−10V, ID=−3A Ciss − 480 − pF Output capacitance Coss − 70 − pF Reverse transfer capacitance Crss td(on) ∗ − 70 − pF − 7 − ns ∗ − 18 − ns ∗ − 50 − ns ∗ − 35 − ns ∗ − 5.2 − nC − 1.6 − nC − 1.6 − nC Tur n-on delay time Rise time tr Tur n-off delay time Fall time td(off) tf Total gate charge Gate-source charge Gate-drain charge Qg Qgs Qgd ∗ ∗ ∗ VDS=−10V VGS=0V f=1MHz VDD −15V ID=−1.5A VGS=−10V RL 10Ω RG =10Ω VDD −15V ID=−3A VGS=−5V RL 5Ω RG =10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. − − −1.2 Unit V Conditions IS= −3A, VGS=0V ∗ Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.03 - Rev.A Data Sheet RRQ030P03 zElectrical characteristic curves 3 Ta=25°C Pulsed -3.8V 2 -3.2V 1.5 -3.0V 1 -2.8V 0.5 2 -3.2V 1.5 -3.0V 1 VGS= -2.8V 0.5 VGS=-2.5V 0 0 0.2 0.4 0.6 0.8 1 2 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics(Ⅰ) 1000 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 VGS= -4.0V VGS= -4.5V VGS= -10V 100 10 8 1 10 Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 0 1 Fig.2 Typical output characteristics(Ⅱ) 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 10 VGS= -4.5V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 1 10 10 0.1 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1 10 DRAIN-CURRENT : -ID [A] Resistance vs. Drain Current(Ⅲ) 10 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Fig.6 Static Drain-Source On-State VDS= -10V Pulsed 1 4 100 Resistance vs. Drain Current(Ⅱ) 10 3 GATE-SOURCE VOLTAGE : -VGS[V] DRAIN-CURRENT : -ID [A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 2 Fig.3 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State 100 0.1 Ta= 125°C DRAIN-SOURCE VOLTAGE : -VDS[V] 0.1 Resistance vs. Drain Current(Ⅰ) VGS= -4.0V Pulsed 1 10 100 DRAIN-CURRENT : -ID [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 6 VGS= -10V Pulsed Fig.4 Static Drain-Source On-State 1000 4 10 0.1 VDS= -10V Pulsed 0.001 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0 REVERSE DRAIN CURRENT : -Is [A] DRAIN CURRENT : -ID [A] 2.5 10 Ta=25°C Pulsed -10V -4.5V -3.6V 2.5 DRAIN CURRENT : -ID [A] -10V -4.5V DRAIN CURRENT : -ID [A] 3 VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 1 DRAIN-CURRENT : -ID [A] Fig.8 Forward Transfer Admittance vs. Drain Current 3/4 10 0 0.2 0.4 0.6 0.8 1 1.2 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 2009.03 - Rev.A Data Sheet RRQ030P03 1000 tf ID = -1.5A ID = -3.0A 200 100 100 10 tr 0 10 Ta=25°C VDD = -15V VGS=-10V RG=10Ω Pulsed td (off) GATE-SOURCE VOLTAGE : -VGS [V] Ta=25°C Pulsed SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 300 td (on) 1 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : -VGS[V] 0.01 0.1 1 10 6 4 Ta=25°C VDD = -15V ID = -3.0A RG=10Ω Pulsed 2 0 0 DRAIN-CURRENT : -ID [A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 8 2 4 6 8 10 TOTAL GATE CHARGE : Qg [nC] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 1000 CAPACITANCE : C [pF] Coss Ciss 100 Crss Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage zMeasurement circuits Pulse Width ID VDS VGS VGS 10% 50% RL D.U.T. 90% 50% 10% 10% VDD RG VDS 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit tf toff Fig.1-2 Switching Waveforms VG ID VDS VGS RL D.U.T. IG(Const.) RG Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Fig.2-2 Gate Charge Waveform 4/4 2009.03 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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