ROHM RW1E025RP

Data Sheet
4V Drive Pch MOSFET
RW1E025RP
 Structure
Silicon P-channel MOSFET
 Dimensions (Unit : mm)
WEMT6
Features
1) Low On-resistance.
2) Small high power package.
3) Low voltage drive.(4V)
(6)
(5)
(4)
(1)
(2)
(3)
Abbreviated symbol : UT
 Application
Switching
 Packaging specifications
Type
 Inner circuit
Package
Code
Taping
T2CR
Basic ordering unit (pieces)
RW1E025RP
(6)
8000

(5)
(4)
∗2
∗1
 Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage
Source current
(Body Diode)
Limits
Unit
VDSS
30
V
V
VGSS
20
Continuous
ID
2.5
A
Pulsed
Continuous
IDP
IS
*1
10
0.5
A
A
Pulsed
ISP
*1
10
A
PD
*2
0.7
W
Tch
Tstg
150
55 to 150
C
C
Symbol
Limits
Unit
Rth (ch-a)*
179
C / W
Gate-source voltage
Drain current
Symbol
Power dissipation
Channel temperature
Range of storage temperature
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
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1/6
2011.03 - Rev.A
Data Sheet
RW1E025RP
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
IGSS
Drain-source breakdown voltage V(BR)DSS
Min.
Typ.
Max.
Unit
Conditions
-
-
10
A
VGS=20V, VDS=0V
30
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
-
55
75
*
RDS (on)
ID=2.5A, VGS=10V
-
85
115
m ID=1.2A, VGS=4.5V
-
95
125
Forward transfer admittance
Zero gate voltage drain current
ID=1.2A, VGS=4V
l Yfs l *
1.5
-
-
S
ID=2.5A, VDS=10V
Input capacitance
Ciss
-
480
-
pF
VDS=10V
Output capacitance
Coss
-
70
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
70
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
7
-
ns
ID=1.2A, VDD 15V
Rise time
tr *
td(off) *
-
12
-
ns
VGS=10V
-
50
-
ns
RL=12.5
tf *
-
22
-
ns
RG=10
Total gate charge
Qg *
-
5.2
-
nC
ID=2.5A
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
1.6
1.6
-
nC
nC
VDD 15V
VGS=5V
Turn-off delay time
Fall time
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
Is=2.5A, VGS=0V
*Pulsed
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2/6
2011.03 - Rev.A
Data Sheet
RW1E025RP
Electrical characteristic curves (Ta=25C)
Fig.2 Typical Output Characteristics (Ⅱ)
Fig.1 Typical Output Characteristics (Ⅰ)
5
5
Ta=25°C
pulsed
VGS=-10.0V
VGS=-4.0V
VGS=-4.5V
VGS=-4.5V
4
VGS=-4.0V
Drain Current : -ID [A]
Drain Current : -ID [A]
4
Ta=25°C
pulsed
VGS=-10.0V
3
VGS=-3.0V
2
VGS=-3.0V
3
VGS=-2.8V
2
VGS=-2.8V
1
1
VGS=-2.5V
VGS=-2.5V
0
0
0
0.2
0.4
0.6
0.8
1
0
2
Drain-Source Voltage : -VDS [V]
1000
8
10
1000
VGS=-10V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mW]
Ta=25°C
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mW]
6
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
VGS=-4.0V
VGS=-4.5V
VGS=-10V
100
10
0.01
0.1
1
10
0.01
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
0.1
1
10
Drain Current : -ID [A]
Drain Current : -ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
1000
1000
VGS=-4.5V
pulsed
VGS=-4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Static Drain-Source On-State Resistance
RDS(on) [mW]
Static Drain-Source On-State Resistance
RDS(on) [mW]
4
Drain-Source Voltage : -VDS [V]
100
10
0.01
0.1
1
0.1
1
10
Drain Current : -ID [A]
Drain Current : -ID [A]
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100
10
0.01
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
3/6
2011.03 - Rev.A
Data Sheet
RW1E025RP
Fig.7 Forward Transfer Admittance vs. Drain Current
Fig.8 Typical Transfer Characteristics
10
10
VDS=-10V
pulsed
1
Drain Currnt : -ID [A]
Forward Transfer Admittance
Yfs [S]
VDS=-10V
pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.01
0.001
0.001
0.01
0.1
1
10
0.0
0.5
1.0
Drain Current : -ID [A]
2.5
3.0
3.5
4.0
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
200
10
VGS=0V
pulsed
Ta=25°C
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mW]
Source Current : -Is [A]
2.0
Gate-Source Voltage : -VGS [V]
Fig.9 Source Current vs. Source-Drain Voltage
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
ID=-1.2A
ID=-2.5A
150
100
50
0
0.01
0.0
0.5
1.0
0
1.5
2
4
6
8
10
Gate-Source Voltage : -VGS [V]
Source-Drain Voltage : -VSD [V]
Fig.12 Dynamic Input Characteristics
Fig.11 Switching Characteristics
10
1000
VDD≒-15V
VGS=-10V
RG=10W
Ta=25°C
Pulsed
100
Ta=25°C
VDD=-15V
ID=-2.5A
Pulsed
8
Gate-Source Voltage : -VGS [V]
tf
Switching Time : t [ns]
1.5
td(off)
tr
10
6
4
2
td(on)
1
0
0.01
0.1
1
10
0
4
6
8
10
12
Total Gate Charge : Qg [nC]
Drain Current :- ID [A]
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2
4/6
2011.03 - Rev.A
RW1E025RP
Data Sheet
Fig.13 Typical Capacitance vs. Drain-Source Voltage
10000
Capacitance : C [pF]
Ta=25°C
f=1MHz
VGS=0V
1000
Ciss
100
Crss
Coss
10
0.01
0.1
1
10
100
Drain-Source Voltage : -VDS [V]
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© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.03 - Rev.A
Data Sheet
RW1E025RP
 Measurement circuits
Pulse Width
VGS
ID
VDS
VGS
10%
50%
90%
RL
D.U.T.
50%
10%
10%
RG
VDD
VDS
90%
td(on)
tr
ton
90%
td(off)
tf
toff
Fig.1-2 Switching Waveforms
Fig.1-1 Switching Time Measurement Circuit
VG
ID
VDS
VGS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
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6/6
2011.03 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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R1120A