S12MD1V/S12MD3 S12MD1V/S12MD3 Photothyristor Coupler ❈ Lead forming type ( I type ) and taping reel type ( P type) of S12MD1V are also available. ( S12MD1VI/S12MDIP ) ■ Outline Dimensions S12MD1V 2.54± 0.25 6 5 Internal connection diagram 4 S12MD1V 1 Anode mark 2 3 0.9± 0.2 1.2± 0.3 7.12± 0.5 5 4 1 2 3 1 2 3 4 5 6 0.5± 0.1 0.8± 0.2 6 7 0.26 ± 0.1 θ : 0 to 13 ˚ S12MD3 2.54± 0.25 8 Anode Cathode NC Cathode Anode Gate 0.5TYP. 3.35± 0.5 3.7± 0.5 1. ON-OFF operation for a low power load 2. For triggering high power thyristor and triac 6 7.62± 0.3 ❈ S12MD1V and S12MD3 are for 100V line ■ Applications ( Unit : mm ) 6.5± 0.5 1. High RMS ON-state current ( IT : MAX. 200mA rms ) 2. High repetitive peak OFF-state voltage ( VDRM : MIN. 400V ) 3. Trigger current I FT : MAX. 15mA at R G = 20kΩ 4. For half-wave control ••• S12MD1V For full-wave control ••• S12MD3 5. Recognized by UL, file No. E64380 3.5±0.5 ■ Features 5 θ Internal connection diagram 8 7 6 5 1 2 3 4 S12MD3 Anode mark 1 1.2± 0.3 2 3 4 0.85± 0.3 7.62± 0.3 0.5± 0.1 4 3 8 7 0.5TYP. 3.0± 0.5 3.5± 0.5 9.22±0.5 1 2 5 6 0.26 ± 0.1 θ : 0 to 13˚ θ “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” Anode Cathode Gate Anode/ cathode S12MD1V/S12MD3 ■ Absolute Maximum Ratings ( Ta = 25˚C) Parameter Input Output Symbol Forward current Reverse voltage RMS ON-state current ∗1 Peak one cycle surge current ∗2 Repetitive peak OFF-state voltage ∗2 Repetitive peak reverse voltage ∗3 Isolation voltage Operating temperature Storage temperature ∗4 Soldering temperature ∗1 50Hz, sine wave ∗2 R G = 20kΩ Rating S12MD1V Unit S12MD3 50 6 200 2 400 IF VR IT Isurge V DRM V RRM V iso T opr T stg T sol 400 5 000 mA V mA rms A V V V rms ˚C ˚C ˚C 1 500 - 30 to + 100 - 40 to + 125 260 ∗3 40 to 60% RH, AC for 1 minute ∗4 For 10 seconds ■ Electro-optical Characteristics Input Output Transfercharacteristics Parameter Forward voltage Reverse current Repetitive peak OFF-state current ∗5 Repetitive peak reverse current ON-state voltage Holding current Critical rate of rise of OFF-state voltage Minimum trigger current Isolation resistance ( Ta = 25˚C ) Symbol VF IR I DRM I RRM VT IH dV/dt I FT R ISO Conditions I F = 30mA V R = 3V V DRM = Rated, R G = 20kΩ V RRM = Rated, R G = 20kΩ I T = 200mA V D = 6V, R G = 20kΩ V DRM = 1/ 2 Rated, R G = 20kΩ V D = 6V, R L = 100Ω , R G = 20kΩ DC500V, 40 to 60% RH MIN. 3 5 x 1010 TYP. 1.2 1.0 0.3 1011 MAX. 1.4 10- 5 10- 6 10- 6 1.4 1 15 - Unit V A A A V mA V/ µ s mA Ω t on V D = 6V, I F = 30mA, R G = 20kΩ , R L = 100Ω - 10 60 µs Turn-on time ∗5 Applies only to S12MD1V Fig. 1 RMS ON-state Current vs. Ambient Temperature Fig. 2 Forward Current vs. Ambient Temperature 60 200 Forward current I F ( mA ) RMS ON-state current I T ( mA rms ) 70 100 50 40 S12MD1V 30 S12MD3 20 10 0 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 0 - 30 0 25 50 75 100 Ambient temperature T a ( ˚C ) 125 S12MD1V/S12MD3 Fig. 3 Forward Current vs. Forward Voltage Fig. 4 Minimum Trigger Current vs. Ambient Temperature 6 500 T a = 75˚C 0˚C 50˚C 100 Minimum trigger current I FT ( mA ) Forward current I F ( mA ) 200 V D = 6V R L = 100Ω 25˚C - 25˚C 50 20 10 5 5 R G= 4 Ω 10k 20kΩ 3 2 50kΩ 1 2 1 0 0.5 1.0 1.5 2.0 2.5 Forward voltage V F ( V ) 0 - 30 3.0 600 VD = 6V R L = 100Ω T a = 25˚C R G = 10kΩ 500 20 Break over voltage VBO ( V ) Minimum trigger current I FT ( mA ) 50 10 5 2 20kΩ 50kΩ 400 100kΩ 300 200 100 1 2 5 10 20 50 Gate resistance R G ( KΩ ) Fig. 7 Critical Rate of Rise of OFF-state Voltage vs. Ambient Temperature 100 0 - 30 200 1.0 V D = 6V V DRM = 1/ 2 • Rated 0.5 20 R G = 10kΩ 10 20kΩ 5 Holding current I H ( mA ) 50 Critical rate of rise of OFF-state voltage dV/dt ( V/ µs ) 0 20 40 60 80 Ambient temperature T a ( ˚C ) Fig. 8 Holding Current vs. Ambient Temperature 100 R G = 10kΩ 20kΩ 0.2 50kΩ 0.1 0.05 50kΩ 0.02 2 1 100 Fig. 6 Break Over Voltage vs. Ambient Temperature Fig. 5 Minimum Trigger Current vs. Gate Resistance 1 0 20 40 60 80 Ambient temperature T a ( ˚C ) 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 0.01 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 100 S12MD1V/S12MD3 Fig. 9 Repetitive Peak OFF-state Current vs. Ambient Temperature Repetitive peak OFF-state current I DRM ( A ) 10 - 4 V DRM = Rated R G = 20kΩ 5 10 - 5 5 10 - 6 5 10 - 7 5 10 - 8 5 10 - 9 0 20 40 60 80 100 Ambient temperature T a ( ˚C ) ■ Basic Operation Circuit ● S12MD1V Medium/High Power Thyristor Drive Circuit + VCC 1 2 6 Load 5 VIN CG 3 4 RG ZS AC 100V ZS : Snubber circuit Medium/High Power Triac Drive Circuit (Zero-cross Operation ) + VCC 1 6 2 5 VIN Load AC 100V RG CG 3 4 S12MD1V/S12MD3 ● S12MD3 Low Power Load Drive Circuit 1 + VCC 8 7 Load 2 3 VIN 4 RG CG RG CG AC 100V ZS 6 ZS : Snubber circuit 5 Medium/High Power Triac Drive Circuit 1 + VCC 8 7 Load 2 3 VIN RG CG RG CG 6 4 5 ● Please refer to the chapter “ Precautions for Use” ( Page 78 to 93 ) . AC 100V