SiC Schottky Barrier Diode SCS108AG zApplications Switching power supply zDimensions (Unit : mm) zStructure zFeatures 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible zConstruction Silicon carbide epitaxial planer type ROHM : ＴO-220AC 2L zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current(*1) Forward current surge peak (60Hz・1cyc) (*2) Junction temperature Storage temperature Symbol VRM VR IF IFSM Tj Tstg Limits Unit 600 600 8 29 150 −55 to +150 V V A A °C °C (*1)Tc=120°C max (*2)PW=8.3ms sinusoidal zElectrical characteristics (Ta=25°C) Parameter Symbol VDC Min. Typ. Max. Unit 600 - - V IR=0.16mA Forward voltage VF - 1.5 1.7 V IF=8A Reverse current IR - 1.6 160 µA VR=600V - 345 - pF VR=1V,f=1MHz DC blocking voltage Conditions Total capacitance C - 38 - pF VR=600V,f=1MHz Total capacitive charge Qc - 15 - nC VR=400V,di/dt=300A/µs Switching time Thermal resistance tc - 15 - ns VR=400V,di/dt=300A/µs Rth(j-c) - - 2.0 °C/W www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 1/3 junction to case 2011.04 - Rev.A Data Sheet SCS108AG Fig.2 VF-IF Characteristics Fig.1 VF-IF Characteristics 12 100 pulsed pulsed FORWARD CURRENT: IF(A) FORWARD CURRENT: IF(A) 10 Ta= 125°C 1 Ta= 75°C Ta= 25°C 0.1 Ta=-25°C 0.01 8 4 Ta= 25°C Ta= 125°C Ta= 75°C 0 0.5 1 1.5 2 0 2.5 0.5 Fig.3 VR-IR Characteristics 1.5 2 2.5 Fig.4 VR-Ct Characteristics 1000 CAPACITANCE BETWEEN TERMINALS : Ct [pF] 100000 10000 REVERSE CURRENT (nA) 1 FORWARD VOLTAGE : VF (V) FORWARD VOLTAGE : VF (V) Ta= 125°C 1000 Ta= 75°C Ta= 25°C 100 10 Ta=-25°C 1 0 200 400 600 100 10 Ta=25°C f=1MHz 1 0.01 0.1 1 10 100 1000 REVERSE VOLTAGE : VR [V] REVERSE VOLTAGE: VR (V) Fig.6 Power Dissipation Fig.5 Thermal Resistance vs Pulse Width 70 10 Ta=25°C Single Pulse 60 POWER DISSIPATION (W) THERMAL RESISTANCE : (℃/W) Ta=-25°C 0 0.001 1 0.1 50 40 30 20 10 0 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 30 60 90 120 150 CASE TEMPERATURE ： Tc (℃) PULSE WIDTH : Pw( s ) 2/3 2011.04 - Rev.A Data Sheet SCS108AG Fig.8 Io-Pf Characteristics Fig.7 Derating Curve Ip-Tc 35 45 Duty=0.1 30 35 POWER DISSIPATION (W) PEAK FORWARD CURRENT (A) 40 Duty=0.2 30 25 Duty=0.5 20 15 10 Duty=0.8 D.C. Duty=0.5 25 Duty=0.2 Duty=0.1 20 15 10 Duty=0.8 D.C. 5 5 0 0 0 30 60 90 120 0 150 CASE TEMPARATURE : Tc (℃) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5 10 15 AVERAGE RECTIFIED FORWARD CURRENT : Io (A) 3/3 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A