ROHM RB225T

Data Sheet
Schottky Barrier Diode
RB225T-40
Applications
Switching power supply
Dimensions(Unit : mm)
Structure
4.5±0.3
0.1
2.8±0.2
0.1
10.0±0.3
0.1
8.0±0.2
12.0±0.2
5.0±0.2
①
1.2
13.5MIN
13.5Min.
Construction
Silicon epitaxial planer
15.0±0.4
0.2
8.0
(1) (2) (3)
Features
1)Cathode common type.(TO-220)
2)Low IR
3)High reliability
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : ＴO220FN
①
Absolute maximum ratings (Ta=25C)
Parameter
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak （60Hz・1cyc）(*1)
Junction temperature
Storage temperature
Manufacture Date
Limits
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Unit
V
V
A
A
40
40
30
100
150
40 to 150
C
C
(*1)Tc=105Cmax Per chip:Io/2
Electrical characteristics(Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol
VF
IR
Min.
-
Typ.
-
Max.
0.63
Unit
V
-
-
500
μA
θjc
-
-
(1.75)
C/W
Conditions
IF=15A
VR=40V
junction to case
( ) : tentative
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1/3
2011.04 - Rev.A
Data Sheet
RB225T-40
Electrical characteristic curves
1000000
100
Ta=75C
Ta=25C
1
Ta=-25C
0.1
f=1MHz
Ta=75C
1000
Ta=25C
100
Ta=-25C
10
1
100
200
300
400
500
10
1
0
600
5
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
10
15
20
25
30
35
0
40
540
530
520
AVE:534.5mV
800
700
600
500
400
300
AVE:78.7uA
200
20
25
30
2520
2510
2500
2490
AVE:2515.6pF
2480
2470
2460
0
2450
VF DISPERSION MAP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
2530
100
510
15
2540
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25C
VR=40V
n=30pcs
900
REVERSE CURRENT:IR(uA)
550
10
2550
1000
Ta=25C
IF=15A
n=30pcs
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
560
IR DISPERSION MAP
Ct DISPERSION MAP
1000
300
1cyc
8.3ms
200
150
100
50
AVE:176.0A
0
45
40
AVE:27.4ns
35
30
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
PEAK SURGE
FORWARD CURRENT:I FSM(A)
Ifsm
250
REVERSE RECOVERY TIME:trr(ns)
50
25
20
15
10
Ifsm
8.3ms
100
5
10
0
1
IFSM DISPERSION MAP
100
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
Ifsm
t
100
10
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
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10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
1000
8.3ms
1cyc
50
IM=100mA
1ms
10
IF=10A
D=1/2
40
time
FORWARD POWER
DISSIPATION:Pf(W)
FORWARD VOLTAGE:V F(mV)
100
0.1
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10000
1000
10000
0.01
PEAK SURGE
FORWARD CURRENT:I FSM(A)
Ta=125C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125C
10
Ta=150C
100000
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:I F(A)
Ta=150C
Rth(j-a)
300us
Mounted on epoxy board
Rth(j-c)
1
30
DC
Sin(=180)
20
10
0.1
0.001
0
0.01
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
1000
0
10
20
30
40
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
50
2011.04 - Rev.A
Data Sheet
RB225T-40
10
50
50
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
8
6
D=1/2
DC
4
Sin(=180)
2
0
D=1/2
40
0V
VR
t
DC
T
30
D=t/T
VR=20V
Tj=150C
20
10
Sin(=180)
0
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io
0A
40
DC
D=1/2
30
Sin(=180)
20
10
0A
Io
0V
VR
t
T
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
150
0
25
50
D=t/T
VR=20V
Tj=150C
75
100
125
150
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
AVE:25.7kV
20
15
10
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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3/3
2011.04 - Rev.A
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Notes
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R1120A