ROHM RB085T

Data Sheet
Schottky barrier diode
RB085T-90
Applications
Switching power supply
Dimensions (Unit : mm)
Structure
Features
1) Cathode common type.
(TO-220)
2) Low IR
(1) (2) (3)
3) High reliability
9
Construction
Silicon epitaxial planer
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz / 1cyc) (*1)
Junction temperature
Storage temperature
Limits
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Unit
V
V
A
A
90
90
10
100
150
40 to 150
C
C
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=122C
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
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Symbol
VF
Typ.
-
Max.
0.83
150
Unit
V
IR
Min.
-
jc
-
-
2.5
C/W
1/3
A
Conditions
IF=5A
VR=90
junction to case
2011.04 - Rev.D
Data Sheet
RB085T-90
Electrical characteristic curves
100000
Ta=150C
10000
Ta=125C
1000
Ta=75C
REVERSE CURRENT:IR(uA)
Ta=125C
1
Ta=75C
Ta=25C
Ta=-25C
0.1
0.01
Ta=25C
10
Ta=-25C
1
10
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
20
30
40
50
60
70
80
90
0
750
AVE:766.6mV
Ta=25C
VR=90V
n=30pcs
160
140
120
100
80
60
AVE:14.3uA
40
REVERSE RECOVERY TIME:trr(ns)
200
8.3ms
150
100
510
500
490
480
470
0
450
AVE:136.0A
50
1000
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
5
AVE:7.40ns
0
0
Ifsm
8.3ms
100
1
trr DISPERSION MAP
100
Mounted on epoxy board
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Ifsm
t
100
10
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
15
IF=5A
IM=100mA
time
D=1/2
300us
1ms
10
Rth(j-a)
1
0.1
0.001
FORWARD POWER
DISSIPATION:Pf(W)
1000
8.3ms
1cyc
10
IFSM DISPERSION MAP
1
AVE:498.5pF
Ct DISPERSION MAP
30
1cyc
30
Ta=25C
f=1MHz
VR=0V
n=10pcs
IR DISPERSION MAP
Ifsm
25
520
460
VF DISPERSION MAP
300
20
530
20
740
15
540
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
760
180
REVERSE CURRENT:IR(uA)
770
10
550
200
Ta=25C
IF=5A
n=30pcs
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
790
250
10
1
0
100 200 300 400 500 600 700 800 900
780
100
0.1
0.01
0
FORWARD VOLTAGE:V F(mV)
f=1MHz
100
0.001
PEAK SURGE
FORWARD CURRENT:I FSM(A)
1000
PEAK SURGE
FORWARD CURRENT:I FSM(A)
FORWARD CURRENT:I F(A)
Ta=150C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
Rth(j-c)
DC
10
Sin(θ=180)
5
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
5
10
15
20
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2011.04 - Rev.D
Data Sheet
RB085T-90
10
30
30
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
8
6
Sin(θ=180)
D=1/2
4
DC
2
0
0V
20
t
DC
T
Io
0A
Io
VR
0V
VR
D=t/T
VR=45V
Tj=150C
D=1/2
10
Sin(θ=180)
0
0
10
20
30
40
50
60
70
80
90
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0A
t
20
DC
T
D=t/T
VR=45V
Tj=150C
D=1/2
10
Sin(θ=180)
0
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
10
AVE:5.30kV
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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3/3
2011.04 - Rev.D
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R1120A