ROHM RB225T

Data Sheet
Schottky barrier diode
RB225T-60
Applications
 Dimensions (Unit : mm)
Switching power supply
Structure
4.5±0.3
0.1
5.0±0.2
8.0±0.2
12.0±0.2
15.0±0.4
0.2
8.0
(1) (2) (3)
①
1.2
13.5MIN
Construction
Silicon epitaxial planar
2.8±0.2
0.1
10.0±0.3
0.1
Features
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : ＴO220FN
①
Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
60
VRM
Reverse voltage (repetitive peak)
Reverse voltage (DC)
60
VR
30
Average rectified forward current(*1)
Io
100
IFSM
Forward current surge peak (60Hz/1cyc) (*1)
Junction temperature
150
Tj
Storage temperature
40 to 150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=108C
Electrical characteristic (Ta=25C)
Parameter
Symbol
VF
Reverse characteristics
Thermal impedance
IR
-
-
600
μA
jc
-
-
1.75
C/W
1/3
Typ.
-
C
C
Forward characteristics
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Min.
-
Unit
V
V
A
A
Max.
0.63
Unit
V
Conditions
IF=15A
VR=60V
junction to case
2011.04 - Rev.C
Data Sheet
RB225T-60
Electrical characteristic curves
Ta=150C
1000000
100
Ta=125C
10000
f=1MHz
10
Ta=125C
Ta=-25C
1
Ta=25C
0.1
Ta=75C
10000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:I F(A)
100000
Ta=150C
Ta=75C
1000
Ta=25C
100
Ta=-25C
10
1
0
100
200
300
400
500
600
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
0
700
10
20
30
40
50
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
0
Ta=25C
VR=60V
n=30pcs
450
580
570
560
400
350
300
250
200
AVE:70.1uA
150
100
550
0
2100
2050
2000
1950
AVE:2030.9pF
Ct DISPERSION MAP
30
8.3ms
150
AVE:176.0A
100
50
1000
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
AVE:23.3ns
5
0
PEAK SURGE
FORWARD CURRENT:I FSM(A)
REVERSE RECOVERY TIME:trr(ns)
1cyc
Ifsm
Ifsm
8.3ms
100
10
1
IF=10A
10
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
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40
1ms
10
time
Rth(j-a)
300us
Rth(j-c)
1
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
IM=100mA
100
100
50
100
t
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISPERSION MAP
Ifsm
8.3ms
1cyc
1
0
1000
30
Ta=25C
f=1MHz
VR=0V
n=10pcs
2150
IR DISPERSION MAP
300
25
1900
VF DISPERSION MAP
200
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
50
AVE:580.0mV
250
5
2200
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
590
10
60
500
Ta=25C
IF=15A
n=30pcs
REVERSE CURRENT:IR(uA)
FORWARD VOLTAGE:V F(mV)
600
100
1
0.1
0.01
PEAK SURGE
FORWARD CURRENT:I FSM(A)
1000
DC
D=1/2
30
Sin(=180)
20
10
0
0.1
0.001
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
10
20
30
40
50
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2011.04 - Rev.C
30
80
80
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
20
Sin(=180)
15
D=1/2
10
DC
5
0V
60
50
D=1/2
40
0
10
20
30
40
50
60
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
T
DC
70
VR
t
D=t/T
VR=30V
Tj=150C
30
20
10
0
Io
0A
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
70
25
REVERSE POWER
DISSIPATION:PR (W)
Data Sheet
RB225T-60
0A
Io
0V
VR
60
t
DC
T
50
D=t/T
VR=30V
Tj=150C
D=1/2
40
30
Sin(=180)
20
10
Sin(=180)
0
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
AVE:18.5kV
10
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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3/3
2011.04 - Rev.C
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R1120A