ROHM RB095T

Data Sheet
Schottky barrier diode
RB095T-90
Applications
Switching power supply
Dimensions (Unit : mm)
Structure
Features
1) Cathode common type.
(TO-220)
2) Low IR
(1) (2) (3)
3) High reliability
9
Construction
Silicon epitaxial planer
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz / 1cyc) (*1)
Junction temperature
Storage temperature
Limits
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Unit
V
V
A
A
90
90
6
100
150
40 to 150
C
C
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=127C
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
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Symbol
VF
Typ.
-
Max.
0.75
150
Unit
V
IR
Min.
-
jc
-
-
1.75
C/W
1/3
A
Conditions
IF=3A
VR=90V
junction to case
2011.04 - Rev.D
Data Sheet
RB095T-90
Electrical characteristic curves
10
100000
Ta=150C
1000
Ta=125C
f=1MHz
1
Ta=125C
Ta=25C
Ta=75C
Ta=-25C
0.1
Ta=75°C
1000
100
Ta=25C
10
Ta=-25°C
1
0.1
0
10
1
0
100 200 300 400 500 600 700 800 900
10
20
30
40
50
60
70
80
0
90
200
Ta=25C
IF=10A
n=30pcs
REVERSE CURRENT:IR(uA)
740
730
720
710
AVE:715.7mV
Ta=25C
VR=90V
n=30pcs
160
140
120
100
80
60
AVE:13.7uA
40
350
340
AVE:357.9pF
330
320
300
Ct DISPERSION MAP
1000
150
AVE:86.0A
100
50
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
PEAK SURGE
FORWARD CURRENT:I FSM(A)
1cyc
8.3ms
200
360
IR DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
Ifsm
370
310
30
250
Ta=25C
f=1MHz
VR=0V
n=10pcs
380
0
VF DISPERSION MAP
300
15
10
AVE:8.30ns
5
0
0
Ifsm
8.3ms
100
1
100
10
100
10
8
1ms
10
time
Rth(j-a)
300us
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
t
Rth(j-c)
1
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
0.001
DC
D=1/2
6
Sin(θ=180)
4
2
0
0.1
10
100
IF=6A
IM=100mA
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
Ifsm
8.3ms
1cyc
10
IFSM DISPERSION MAP
1000
30
390
20
700
20
400
180
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
750
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE:V F(mV)
100
0.01
0.01
PEAK SURGE
FORWARD CURRENT:I FSM(A)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:I F(A)
10000
Ta=150C
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2011.04 - Rev.D
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
4
3
D=1/2
DC
Sin(θ=180)
1
0
0A
Io
0V
VR
t
DC
T
10
15
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
15
5
2
Data Sheet
RB095T-90
D=t/T
VR=45V
Tj=150C
D=1/2
5
Sin(θ=180)
10
20
30
40
50
60
70
80
90
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
Io
0V
VR
DC
10
t
T
D=t/T
VR=45V
Tj=150C
D=1/2
5
Sin(θ=180)
0
0
0
0A
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
30
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
AVE:26.70kV
20
15
AVE:9.60kV
10
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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2011.04 - Rev.D
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R1120A