SD1222-5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1222-5 is a transistor designed primarily for 12.5 V AM Class-C amplifiers in the118-136 MHz band and 28 V Class-C RF amplifiers in ground stations. PACKAGE STYLE .380 4L FLG B .112 x 45° FEATURES: A E • PG = 8.2 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 20 W (PEP) • Omnigold™ Metalization System • Emitter Ballasting C Ø.125 NOM. FULL R J .125 B E C D E F G H I MAXIMUM RATINGS IC VCBO 3.0 A 65 V DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 MAXIMUM C .720 / 18.29 .730 / 18.54 35 V D .970 / 24.64 .980 / 24.89 VEBO 4.0 V F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 PDISS 30 W @ TC = 25 °C H .160 / 4.06 TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 5.83 °C/W VCEO CHARACTERISTICS .180 / 4.57 .280 / 7.11 I .240 / 6.10 J .255 / 6.48 TC = 25 °C NONETEST CONDITIONS SYMBOL .385 / 9.78 E MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V ICES VCE = 30 V hFE VCE = 5.0 V Cob VCB = 30 V GP VCC = 27 V TA = 125°C IC = 200 mA POUT = 20 W 1.0 mA 10 mA --- 5.0 f = 1.0 MHz 35 pF f = 136 MHz 35 pF A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1