SD1898 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS .. .. .. 1.65 GHz 28 VOLTS EFFICIENCY 40% MIN. CLASS C OPERATION COMMON BASE P OUT = 32 W MIN. WITH 9 dB GAIN .400 SQ. 2LFL (M186) epoxy sealed ORDER CODE SD1898 BRANDING 1898 PIN CONNECTION DESCRIPTION The SD1898 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emitterballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operating conditions. SD1898 is packaged in a cost-effective epoxy sealed housing. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.5 V Device Current 7.8 A Power Dissipation 87.5 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 2.0 °C/W IC PDISS THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 1/4 SD1898 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 10mA IE = 0mA 45 — — V BVCEO IC = 10mA IB = 0mA 12 — — V BVEBO IE = 10mA IC = 0mA 3.5 — — V hFE VCE = 5V IC = 2A 15 — 150 — DYNAMIC Symbol Value Test Conditions Min . Typ. Max. POUT f = 1.65 GHz PIN = 4.0 W VCE = 28 V 32 — — W GP ηc f = 1.65 GHz PIN = 4.0 W VCE = 28 V 9.0 — — dB f = 1.65 GHz PIN = 4.0 W VCE = 28 V 40 — — % TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 2/4 Unit EFFICIENCY vs POWER INPUT SD1898 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN 1550 MHz ZIN (Ω) 6.6 + j 15.0 5.6 − j 2.5 1600 MHz 8.3 + j 14.5 4.7 − j 1.9 1650 MHz 12.0 + j 12.0 4.1 − j 1.4 FREQ. TYPICAL COLLECTOR LOAD IMPEDANCE ZCL (Ω) ZCL TEST CIRCUIT C1, C2 : .4 - 2.5pF Johanson Capacitor C3 : 15,000pF EMI Filter C4 : 1000pF Chip Capacitor L1, L2 : 5 Turns Choke Diameter Wire .025” I.D. .125” Substrate: Er = 10.2, Height .050”, 1 Oz. Copper All Dimensions in Inches. 3/4 SD1898 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0186 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4