SEMiX251D12Fs Absolute Maximum Ratings Symbol Conditions Values Unit A Rect. Diode Tc = 85 °C 250 Tc = 100 °C 215 A Tj = 25 °C 1660 A Tj = 150 °C 1330 A Tj = 25 °C 13700 A2s Tj = 150 °C 8800 A2s VRSM 1200 V VRRM 1200 V -40 ... 150 °C -40 ... 125 °C 1 min 4000 V 1s 4800 V IF IFSM Tj = 150 °C 10 ms i2t ® SEMiX 13 Tj Module Bridge Rectifier Module (uncontrolled) Tstg Visol SEMiX251D12Fs AC sinus 50Hz Characteristics Features Symbol • Terminal height 17 mm • Chips soldered directly to isolated substrate Typical Applications* • Fast Input Bridge Rectifier for AC/DC motor control • Power supply • High frequency applications Conditions min. typ. max. Unit V Rectifier Diode VF Tj = 25 °C 2.5 V(TO) Tj = 150 °C 1.2 V rT Tj = 150 °C 7 mΩ IRD Tj = 150 °C, VRD = VRRM;VRD = VRRM per diode Rth(j-c) 40 mA 0.26 K/W K/W Module Rth(c-s) per chip K/W per module 0.04 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm 5 * 9,81 m/s2 a w 350 g D © by SEMIKRON Rev. 9 – 25.03.2010 1 SEMiX251D12Fs Fig. 4L: Power dissipation per module vs. direct current Fig. 4R: Power dissipation per module vs. case temperature Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics 2 Fig. 8: Surge overload current vs. time Rev. 9 – 25.03.2010 © by SEMIKRON SEMiX251D12Fs spring configuration SEMiX 13 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 9 – 25.03.2010 3