WILLAS FM120-M+ SESD9L5.0T5 THRU FM1200-M+ ESD Diodes with Ultra−Low 1.0AProtection SURFACE MOUNT SCHOTTKY BARRIER Capacitance RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. capability, low forward voltage drop.components that • High current The 6ESD9L is designed to protect voltage sensitive require •ultra−low High surgecapacitance capability. from ESD and transient voltage events. Excellent clampingfor capability, lowprotection. capacitance, low leakage, and fast overvoltage • Guardring response• Ultra time,high-speed make these parts ideal for ESD protection on designs switching. where board space is at aplanar premium. of itsjunction. low capacitance, it is epitaxial chip,Because metal silicon • Silicon suited for use in high frequency designs suchstandards as USB 2.0 parts meet environmental of high speed and • Lead-free MIL-STD-19500 antenna line applications./228 • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) 2 Specification Features: Halogen free product for packing code suffix "H" 1 • UltraMechanical Low Capacitance data 0.5 pF Voltage • Low •Clamping Epoxy : UL94-V0 rated flame retardant Outline Dimensions: • Small• Body Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. Pb-Free package is available Ordering information Ratings at 25℃ ambient temperature unless otherwise specified. RoHS product for packing code suffix ”G” Single phase half wave, 60Hz, resistive of inductive load. Halogen free product packing code suffix “H” For capacitive load, derate for current by 20% Device Marking D SESD9L5.0T5 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH RATINGS Mechanical Characteristics: Marking Code CASE: Void-free, transfer-molded, thermosetting plastic 12 13 14 15 16 8000/Tape&Reel FM180-MH FM1100-MH FM1150-MH FM1200-MH U VRRM 20 30 40 50 60 18 80 10 100 115 150 120 200 V VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Device Meets MSL 1 Requirements IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) MAXIMUM RATINGS Typical Thermal Resistance (Note 2) Rating Typical Junction Capacitance (Note 1) IEC 61000−4−2 (ESD) Operating Temperature Range Storage Temperature Range RΘJA Symbol CJ TJ Contact Air Total Power Dissipation on FR−5 Board = 25°C (Note 1) @ TACHARACTERISTICS Maximum VoltageRange at 1.0A DC StorageForward Temperature TSTG °PD° 1.0 30 Value ±10 ±15 150 40 120 Unit -55kV to +125 A A ℃ -55 to +150 - 65 to +175 mW SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Tstg VF −55 to +150 Maximum Average ReverseRange Current at @T A=25℃ TJ Junction Temperature Shipping Maximum Recurrent Reverse Voltage Epoxy Meets UL Peak 94 V−0 100% Matte Sn (Tin) LEAD FINISH: Maximum RMS Voltage QUALIFIED MAX REFLOW TEMPERATURE: 260°C Maximum Average Forward Rectified Current 0.040(1.0) 0.024(0.6) SOD-923 0.039″ x 0.024″ (1.00 mm x 0.60 mm) , • Terminals :Plated terminals, solderable per MIL-STD-750 Low Body Height: 0.016″ (0.4 mm) Method 2026 Stand−off Voltage: 5 V 1 2 Dimensions in inches and (millimeters) Polarity : Indicated by cathode band Low •Leakage PIN 1. CATHODE Position : Any< 1.0 ns • Mounting 2. ANODE Response Time is Typically • Weight : Approximated gram IEC61000−4−2 Level 4 ESD0.011 Protection This is a Pb−Free Device MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS • • • • • • • 0.012(0.3) Typ. @T A=125℃T Rated DCSolder Blocking Voltage − Maximum Lead Temperature L IR −55 to +125 260 °C 0.50 °C °C 0.70 0.85 0.5 0.9 0.92 V 10 m (10 Second Duration) NOTES: IPP Peak Pulse 1- Measured at 1Current MHZ and applied reverse voltage of 4.0 VDC. m 8 x 20 Resistance sec. 2- Thermal From Junction to Ambient 5(Max) A Peak Power Dissipation Ppk 50(Max) W 8 x 20 m sec. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS ESD Diodes with Ultra−Low 1.0AProtection SURFACE MOUNT SCHOTTKY BARRIER Capacitance RECTIFIERS -20V- 200V FM120-M+ SESD9L5.0T5 THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline ELECTRICAL CHARACTERISTICS Features (TA = 25°C unless otherwise noted) process design, excellent power dissipation offers • Batch better reverse leakageParameter current and thermal resistance. Symbol • Low profile surface mounted application in order to IPP optimize Maximum boardReverse space. Peak Pulse Current power loss, high @ efficiency. VC• Low Clamping Voltage IPP • High current capability, low forward voltage drop. VRWM Peak Reverse Voltage surge capability. • HighWorking for overvoltage protection. IR• Guardring Maximum Reverse Leakage Current @ VRWM Ultra high-speed switching. • VBR Breakdown Voltage @ IT • Silicon epitaxial planar chip, metal silicon junction. IT• Lead-free Test Current parts meet environmental standards of MIL-STD-19500 /228 IF Forward Current • RoHS product for packing code suffix "G" VF Halogen Forward Voltage for @ Ipacking F free product code suffix "H" IF I SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. VC VBR VRWM V IR VF IT 0.071(1.8) 0.056(1.4) IPP Mechanical data Ppk Peak Power Dissipation 0.040(1.0) 0.024(0.6) Uni−Directional TVS : UL94-V0@ rated C• Epoxy Capacitance VR =flame 0 andretardant f = 1.0 MHz Case : Molded plastic, SOD-123H *See •Application Note AND8308/D for detailed explanations of , datasheet parameters. • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated V0.011 gramI (mA) Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.0 V Max. @ IF = 10 mA for all types) RWM (V) VBR (V) @ IT (Note 2) R @ VRWM IT C (pF) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Device Ratings at 25℃ ambient temperature unless otherwise specified. Max Max Min Marking Device Single phase half wave, 60Hz, resistive of inductive load. SESD9L5.0T5 D 5.0 1.0 5.4 For capacitive load, derate current by 20% VC (V) @ IPP = 1 A (Note 3) VC Per IEC61000−4−2 (Note 4) mA Typ Max Max 1.0 0.5 0.9 9.8 SYMBOL FM120-MH 2. VBR is measured RATINGS with a pulse test current IT at an ambient temperature of 25°C. 12 13 14 4. For test procedure Figures 3 and 4 and Application 30 40 Maximum Recurrent Peaksee Reverse Voltage VRRM Note20AND8307/D. Figures 1 and 2 See Below FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code 3. Surge current waveform per Figure 5. 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 2012-09 2012-06 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS ESD Diodes with Ultra−Low 1.0AProtection SURFACE MOUNT SCHOTTKY BARRIER Capacitance RECTIFIERS -20V- 200V FM120-M+ SESD9L5.0T5 THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline IEC61000−4−2 Waveform Features IEC 61000−4−2 Spec. • Batch process design, excellent power dissipation offers First Peak better Test reverse leakage current and thermal resistance. at inCurrent at Current profile surface mountedCurrent application order to • Low Voltage 30 ns (A) 60 ns (A) (kV)board space. (A) Leveloptimize 1 • Low power 2 loss, high 7.5efficiency. 4 2 • High current capability, low forward voltage drop. 2 • High surge 4 capability. 15 8 4 protection. 3 • Guardring 6 for overvoltage 22.5 12 6 Ultra high-speed switching. • 4 8 30 16 8 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data Ipeak SOD-123H 100% 90% 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. I @ 30 ns 0.071(1.8) 0.056(1.4) I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec • Epoxy : UL94-V0 rated flame retardant Oscilloscope ESD Gun : Molded plastic, SOD-123H • Case TVS , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band 50 W • Mounting Position : Any Cable • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) 50 W MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Figure 4. Diagram of ESD Test Setup SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS The following is taken from Application Note systems14 such as15cell phones computers it 115 is not 120 Marking Code 12 13 16 or laptop 18 10 AND8308/D − Interpretation of Datasheet Parameters20 VRRM for ESD Devices. clearly defined in50the spec60how to specify a clamping voltage 30 40 80 100 150 200 V at the device a way 21 28 level. 35 ON Semiconductor 42 56 has developed 70 105 V to examine the entire voltage waveform across the ESD 40 50 60 80 100 150 protection diode over the time domain of an ESD pulse in the 1.0 form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more 30 information on how ON Semiconductor creates these screenshots and how to interpret them please refer to 40 AND8307/D. 120 -55 to +125 -55 to +150 140 30 200 V Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage ESD Voltage Clamping VDC 20 For sensitive circuitRectified elements it is important Ito Maximum Average Forward Current O limit the voltage that an IC will be exposed to during an ESD event Peak Forward Current ms singleThe half sine-wave to as low aSurge voltage as8.3 possible. ESD clamping IFSM voltage superimposed on rated load (JEDECthe method) is the voltage drop across ESD protection diode during Typical Thermal Resistance (Note 2) RΘJASince the an ESD event per the IEC61000−4−2 waveform. Typical Junction Capacitance (Note 1) IEC61000−4−2 was written as a pass/fail specCJfor larger Operating Temperature Range % OF PEAK PULSE CURRENT CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TJ 100 Storage Temperature Range tr 90 NOTES: A ℃ - 65 to +175 TSTG PEAK VALUE IRSM @ 8 ms PULSE WIDTH (t ) IS DEFINED AS THAT POINT WHERE THE 0.50 0.70 PEAK CURRENT DECAY = 8 ms P FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL FM120-MH FM130-MH FM140-MH 80 VF 70 Maximum Average Reverse Current at @T A=25℃ 60 @T A=125℃ Rated DC Blocking Voltage A IR 0.85 0.5 HALF VALUE IRSM/2 @ 20 ms 50 0.9 0.92 V 10 m 40 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 30 tP 2- Thermal Resistance From Junction to Ambient 20 10 0 0 20 40 t, TIME (ms) 60 80 Figure 5. 8 X 20 ms Pulse Waveform 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS ESD Diodes with Ultra−Low Capacitance 1.0AProtection SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ SESD9L5.0T5 THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .030(0.75) .033(0.85) 0.040(1.0) 0.024(0.6) .022(0.55) .026(0.65) .006(0.15) .010(0.25) SOD−923 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. Dimensions in inches and (millimeters) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of.017(0.43) inductive load. For capacitive load, derate current by 20% .013(0.34) RATINGS .003(0.07) .007(0.17) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 Maximum RMS Voltage VRMS 14 21 28 35 Maximum DC Blocking Voltage VDC 20 30 40 50 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 16 60 18 80 10 100 115 150 120 200 Vo 42 56 70 105 140 Vo 60 80 100 150 200 Vo 1.0 30 .037(0.95) .041(1.05) RΘJA Dimensions in inches and (millimeters) CJ Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) -55 to +125 TJ Operating Temperature Range Storage Temperature Range 40 120 A A ℃ P -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Forward Voltage at 1.0A DC VF Maximum Average Reverse Current at @T A=25℃ SOLDERING FOOTPRINT* IR Rated DC Blocking Voltage @T A=125℃ NOTES: 0.50 0.90 0.70 0.85 0.5 0.9 0.92 Vo 10 mA 0.40 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.30 DIMENSIONS: MILLIMETERS 2012-06 2012-09 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.