SFH636 HIGH SPEED 5.3 kV OPTOCOUPLER Preliminary Data Sheet FEATURES • High Speed Optocoupler without Base Connection • GaAlAs Emitter • Integrated Detector with Photodiode and Transistor • High Data Transmission Rate: 1 MBit/s • TTL Compatible • Open Collector Output • CTR at IF=16 mA, VO=0.4 V, VCC=4.5 V, TA=25°C: ≥19% • Good CTR Linearity Relative to Forward Current • Field Effect Stable by TRIOS (TRansparent IOn Shield) • Low Coupling Capacitance • dV/dt: typ. 10 kV/µ s • Isolation Test Voltage: 5300 VACRMS • VDE 0884 Available with Option 1 • UL Approval, File #E52744 APPLICATIONS • IGBT Drivers • Data Communications • Programmable Controllers DESCRIPTION The SFH636 is an optocoupler with a GaAlAs infrared emitting diode, optically coupled to an integrated photodetector consisting of a photodiode and a high speed transistor in a DIP-6 plastic package. The device is functionally similar to 6N136 except there is no base connection, and the electrical foot print is different. Noise and dv/dt performance is enhanced by not bringing out the base connection. Signals can be transmitted between two electrically separated circuits up to frequencies of 2 MHz. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages. Package Dimensions in Inches (mm) Pin One ID. 3 2 1 Cathode 1 .248 (6.30) .256 (6.50) Anode 2 4 5 4° typ. .018 (0.45) .022 (0.55) 5 Emitter 6 NC 3 .335 (8.50) .343 (8.70) .039 (1.00) min. 6 VCC 4 Collector .300 (7.62) typ. .130 (3.30) .150 (3.81) 18° typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .300 (7.62) .347 (8.82) Absolute Maximum Ratings Emitter (GaAlAs) Reverse Voltage............................................................................. 3 V DC Forward Current..................................................................25 mA Surge Forward Current ..................................................................1 A tp≤1 µs, 300 pulses/sec. Total Power Dissipation............................................................ 45 mW Detector (Si Photodiode + Transistor) Supply Voltage................................................................. –0.5 to 30 V Output Voltage ................................................................. –0.5 to 20 V Output Current ............................................................................8 mA Total Power Dissipation.......................................................... 100 mW Package Insulation Isolation Test Voltage between emitter and detector (refer to climate DIN 40046, part 2, Nov. 74) ........... 5300 VACRMS Creepage........................................................................... 7 mm min. Clearance .......................................................................... 7 mm min. Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 ............................................ 175 Isolation Resistance VIO=500 V, TA=25°C........................................................... ≥1012 Ω VIO=500 V, TA=100°C......................................................... ≥1011 Ω Storage Temperature Range........................................ –55 to +150°C Ambient Temperature Range....................................... –55 to +100°C Junction Temperature ............................................................... 100°C Soldering Temperature (t=10 sec. max.) ................................. 260°C Dip soldering: distance to seating plane ≥1.5 mm 5–260 Characteristics (TA=0° to 70°C, unless otherwise specified,typical values TA=25°C) Description Symbol Min. Typ. Max. Unit Emitter (IR GaAlAs) Forward Voltage, IF=16 mA VF 1.5 1.8 V Reverse Current, VR=3 V IR 0.5 10 µA Capacitance, VR=0 V, f=1 MHz C0 125 pF Thermal Resistance RthJA 700 °K/W Detector (Si Photodiode + Transistor) µA Supply Current, Logic High IF=0, VO (open), VCC=15 V, TA=25°C IF=0, VO (open), VCC=15 V ICCH Output Current, Output High IF=0, VO (open), VCC=5.5 V, TA=25°C IF=0, VO (open), VCC=15 V, TA=25°C IF=0, VO (open), VCC=15 V IOH Capacitance, VCE=5 V, f=1 MHz CCE 3 pF Thermal Resistance RthJA 300 °K/W Coupling Capacitance CC 0.6 pF Coupling Transfer Ratio IF=16 mA, VO=0.4 V, VCC=4.5 V, TA=25°C IF=16 mA, VO=0.5 V, VCC=4.5 V IC/IF Collector Emitter Saturation Voltage IF=16 mA, IO=2.4 mA, VCC=4.5 V, TA=25°C VOL 0.1 Supply Current, Logic Low IF=16 mA, VO open, VCC=15 V ICCL 80 0.01 1 2 .003 .01 — 0.5 1 50 µA Package % 19 15 30 — Figure 1. Test set-up 0.4 V µA Figure 2. Switching time measurement IF Vout C=100 nF 1 6 2 5 Vcc 5V 100 Ω Pulse generator Zo=50 Ω tr,tf=5 ns Duty cycle=10% Period =100 µs 3 4 RL 1.5V Vo 0 t t C L=15pF t PHL PLH IF 16 mA 0 t SFH636 5–261 Description Symbol Propagation Delay Time (High–Low) IF=16 mA, VCC=5 V, RL=1.9 kΩ, TA=25°C Propagation Delay Time (Low–High) IF=16 mA, VCC=5 V, RL=1.9 kΩ, TA=25°C Min. Typ. Max. Unit tPHL 0.3 0.8 µs tPLH 0.3 0.8 µs Figure 3. Common mode transient test Figure 4. Measurement waveform of CMR C=100 nF 6 2 5 3 4 V CM Vcc 10% 90% IF B 1 RL 10% A VFF 90% t 0 Vo tF tR Vo Pulse generator common mode 5V A: IF=0 mA 0 t Vo B: IF=16 mA VOL t 0 Description Symbol Min. Typ. Max. Unit Common Mode Transient Immunity (High) IF=0, VCM=1500 VP-P, RL=1.9 kΩ, VCC=5 V, TA=25°C CMH 10 kV/µs Common Mode Transient Immunity (Low) IF=16 mA, VCM=1500 VP-P, RL=1.9 kΩ, VCC=5 V, TA=25°C CML 10 kV/µs SFH636 5–262