SGH5N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. • • • • • Short circuit rated 10µs @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 5A High input impedance CO-PAK, IGBT with FRD : trr = 55ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3P E G C E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGH5N120RUFD 1200 ± 25 8 5 15 5 30 10 74 30 -55 to +150 -55 to +150 Units V V A A A A A µs W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2002 Fairchild Semiconductor Corporation Typ. ---- Max. 1.68 2.4 40 Units °C/W °C/W °C/W SGH5N120RUFD Rev. B2 SGH5N120RUFD IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 1mA 1200 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 1 ± 100 mA nA IC = 5mA, VCE = VGE IC = 5A, VGE = 15V IC = 8A, VGE = 15V 3.5 --- 5.5 2.3 2.8 7.5 3.0 -- V V V VCE = 30V, VGE = 0V, f = 1MHz ---- 520 45 16 ---- pF pF pF --------------- 20 60 50 150 0.35 0.33 0.68 20 70 70 200 0.38 0.50 0.88 --90 300 --0.95 --130 400 --1.28 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Le Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 600 V, IC = 5A, RG = 30Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 600 V, IC = 5A, RG = 30Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 600 V, VGE = 15V = 100°C C Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge ©2002 Fairchild Semiconductor Corporation -- µs 28 3 13 14 42 5 18 -- nC nC nC nH Min. -- Typ. 2.9 Max. 3.5 Units TC = 100°C -- 2.7 -- TC = 25°C -- 55 100 TC = 100°C -- 70 -- TC = 25°C -- 5.0 7.0 TC = 100°C -- 6.5 -- TC = 25°C -- 140 350 TC = 100°C -- 230 -- Measured 5mm from PKG Parameter VFM -- ----- VCE = 600 V, IC = 5A, VGE = 15V Electrical Characteristics of DIODE T Symbol 10 @ TC IF = 5A = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 5A dI/dt = 200 A/µs V ns A nC SGH5N120RUFD Rev. B2 SGH5N120RUFD Electrical Characteristics of the IGBT T 20V Common Emitter T C = 25℃ 15V 20 12V VGE = 10V 10 20 Collector Current, IC [A] Collector Current, IC [A] Common Emitter VGE = 15V TC = 25℃ TC = 125℃ 17V 30 0 15 10 5 0 0 2 4 6 8 10 0 2 Collector - Emitter Voltage, VCE [V] 6 8 10 Fig 2. Typical Saturation Voltage Characteristics 12 3.2 VCC = 600V Load Current : peak of square wave Common Emitter VG E = 15V 3.0 8A 2.8 Load Current [A] Collector - Emitter Voltage, VCE [V] 4 Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics 2.6 2.4 IC = 5A 2.2 8 4 Duty cycle : 50% 2.0 1.8 25 TC = 100℃ Power Dissipation = 15W 0 50 75 100 125 150 0.1 1 10 100 1000 Frequency [KHz] Case Temperature, T C [℃] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC = 25℃ Common Emitter T C = 125℃ Collector - Emitter Voltage, VCE[V] Collector - Emitter Voltage, VCE [V] SGH5N120RUFD 25 40 16 12 8 10A 4 5A IC = 3A 0 16 12 8 10A 4 5A I C = 3A 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE SGH5N120RUFD Rev. B2 Common Emitter VGE = 0V, f = 1MHz TC = 25℃ Common Emitter VCC = 600V, VGE = ± 15V IC =5A TC = 25℃ TC = 125℃ 600 tr td(on) Switching Time [ns] Capacitance [pF] 800 Cies 400 10 200 Coes Cres 0 1 10 10 100 Collector - Emitter Voltage, VCE [V] Gate Resistance, RG [Ω ] Fig 7. Capacitance Characteristics Common Emitter VCC = 600V, VGE = ± 15V TC = 25℃ TC = 125℃ Common Emitter VCC = 600V, VGE = ± 15V IC = 5A TC = 25℃ TC = 125℃ 1000 tf td(off) 100 Switching Loss [µJ] Switching Time [ns] 1000 Fig 8. Turn-On Characteristics vs. Gate Resistance 10 Eoff Eon Eoff 100 10 100 10 100 Gate Resistance, RG [Ω ] Gate Resistance, RG [Ω ] Fig 10. Switching Loss vs. Gate Resistance Fig 9. Turn-Off Characteristics vs. Gate Resistance 1000 Common Emitter VGE = ± 15V, RG = 30Ω TC = 25℃ TC = 125℃ Common Emitter VGE = ± 15V, RG = 30Ω TC = 25℃ TC = 125℃ Switching Time [ns] Switching Time [ns] 100 tr tf 100 td(on) td(off) 10 2 4 6 8 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation 10 2 4 6 8 10 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGH5N120RUFD Rev. B2 SGH5N120RUFD 1000 Common Emitter R L = 120 Ω TC = 25℃ 14 Gate - Emitter Voltage VGE [V] Switching Loss [µJ] 1000 SGH5N120RUFD 16 Common Emitter VGE = ± 15V, RG = 30Ω TC = 25℃ TC = 125℃ Eoff Eon Eoff Eon 100 12 600V 10 400V 8 VCC = 200V 6 4 2 0 2 4 6 8 10 0 10 Collector Current, I C [A] 20 30 Gate Charge, Qg [nC] Fig 14. Gate Charge Characteristics Fig 13. Switching Loss vs. Collector Current 100 50µ s IC MAX. (Continuous) 10 Collector Current, I C [A] Collector Current, I C [A] IC MAX. (Pulsed) 10 100µ s 1ms DC Operation 1 Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linearly with increase in temperature 0.1 0.01 0.1 1 Safe Operating Area VGE = 20V, TC = 100℃ 1 10 100 1000 1 10 Collector - Emitter Voltage, V CE [V] 100 1000 Collector - Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Thermal Response [Zthjc] 10 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Pdm 0.01 t1 t2 single pulse Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGH5N120RUFD Rev. B2 Reverse Recovery Current, Irr [A] T C = 25℃ T C = 100℃ Forward Current, IF [A] 10 1 2 4 VR = 200V IF = 5A TC = 25℃ TC = 100℃ 8 6 4 2 0 100 0.1 0 10 6 Forward Voltage Drop, VFM [V] Fig 19. Reverse Recovery Current 100 VR = 200V IF = 5A TC = 25℃ TC = 100℃ Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 400 300 250 200 150 100 50 100 500 di/dt [A/µ s] Fig 20. Stored Charge ©2002 Fairchild Semiconductor Corporation 500 di/dt [A/µs] Fig 18. Forward Characteristics 350 SGH5N120RUFD 12 30 80 60 40 VR = 200V IF = 5A TC = 25℃ TC = 100℃ 20 100 500 di/dt [A/µs] Fig 21. Reverse Recovery Time SGH5N120RUFD Rev. B2 TO-3P (FS PKG CODE AF) 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGH5N120RUFD Rev. B2 SGH5N120RUFD Package Dimension TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H5