Si4412ADY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.024 @ VGS = 10 V 8 0.035 @ VGS = 4.5 V 6.6 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View Ordering Information: Si4412ADY Si4412ADY-T1 (with Tape and Reel) S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 5.8 6.4 IDM Continuous Source Current (Diode Conduction)a V 8 ID 4.6 A 30 2.3 1.2 2.5 1.3 1.6 0.8 TJ, Tstg Unit W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot Steady State Steady State RthJA RthJF Typical Maximum 45 50 80 95 16 20 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71105 S-03951—Rev. B, 26-May-03 www.vishay.com 2-1 Si4412ADY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea V nA mA 30 A VGS = 10 V, ID = 8 A 0.020 0.024 VGS = 4.5 V, ID = 6.6 A 0.029 0.035 gfs VDS = 15 V, ID = 8 A 21 VSD IS = 2.3 A, VGS = 0 V 0.75 1.1 16 20 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 3 nC 1.5 0.5 15 20 tr 6 12 26 50 10 20 40 80 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr W 2.0 td(on) Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 10 V, ID = 2 A IF = 2.3 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 4V 24 24 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 thru 5 V 18 12 3V 6 18 12 TC = - 125_C 6 25_C - 55_C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 2-2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 71105 S-03951—Rev. B, 26-May-03 Si4412ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1200 Ciss 1000 0.04 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.05 VGS = 4.5 V 0.03 VGS = 10 V 0.02 800 600 400 Coss 0.01 200 0.00 Crss 0 0 6 12 18 24 0 30 6 ID - Drain Current (A) Gate Charge 24 30 On-Resistance vs. Junction Temperature 1.8 VDS = 15 V ID = 2 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) 10 8 6 4 2 VGS = 10 V ID = 8 A 1.6 1.4 1.2 1.0 0.8 0 0 4 8 12 0.6 - 50 16 - 25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ - Junction Temperature (_C) 30 I S - Source Current (A) 12 0.08 ID = 3.9 A 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71105 S-03951—Rev. B, 26-May-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 2-3 Si4412ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 50 40 ID = 250 mA - 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 www.vishay.com S FaxBack 408-970-5600 2-4 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71105 S-03951—Rev. B, 26-May-03