Si4470EY Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 D TrenchFETr Power MOSFETS D Extended Temperature Range rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 12.7 APPLICATION 0.013 @ VGS = 6.0 V 11.7 D Primary Side Switch D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4470EY Si4470EY-T1 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current L = 0.1 mH Continuous Source Current (Diode Conduction)a TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 7.5 50 IAS IS 9.0 10.6 IDM Avalanch Current V 12.7 ID Unit A 50 3.1 1.5 3.75 1.85 2.6 1.3 TJ, Tstg W _C - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 33 40 65 80 17 21 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71606 S-03951—Rev. B, 26-May-03 www.vishay.com 1 Si4470EY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 2.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 48 V, VGS = 0 V 1 VDS = 48 V, VGS = 0 V, TJ = 55_C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On Drain-Source On-State State Resistancea VDS w 5 V, VGS = 10 V Diode Forward Voltagea nA mA 50 A VGS = 10 V, ID = 12 A 0.009 0.011 VGS = 6.0 V, ID = 10 A 0.0105 0.013 rDS(on) DS( ) Forward Transconductancea V gfs VDS = 15 V, ID = 10 A 50 VSD IS = 3.0 A, VGS = 0 V 0.75 1.2 46 57 VDS = 30 V, VGS = 10 V, ID = 12 A 11.5 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 11.5 0.25 0.85 1.4 16 25 12 18 50 75 30 45 40 60 td(on) Rise Time tr Turn-Off Delay Time VDD = 30 V, RL = 30 W ID ^ 1.0 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = 3.0 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 20 TC = 125_C 10 2, 3 V 25_C 4V - 55_C 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 30 10 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 71606 S-03951—Rev. B, 26-May-03 Si4470EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 4000 3500 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.020 0.015 VGS = 6 V VGS = 10 V 0.010 0.005 Ciss 3000 2500 2000 1500 1000 Crss Coss 500 0.000 0 0 10 20 30 40 0 50 15 ID - Drain Current (A) 45 60 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 2.1 VDS = 30 V ID = 5 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 30 8 6 4 VGS = 10 V ID = 5 A 1.8 1.5 1.2 0.9 0.6 2 0.3 0 0 10 20 30 40 0.0 - 50 50 - 25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 75 100 125 150 175 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 50 0.10 100 TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ - Junction Temperature (_C) 0.08 ID = 5 A 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71606 S-03951—Rev. B, 26-May-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4470EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 60 0.6 50 ID = 250 mA 40 0.2 Power (W) V GS(th) Variance (V) Threshold Voltage 1.0 - 0.2 30 - 0.6 20 - 1.0 10 - 1.4 - 50 - 25 0 25 50 75 100 125 150 175 0 0.01 1 0.1 TJ - Temperature (_C) 10 100 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 1000 Document Number: 71606 S-03951—Rev. B, 26-May-03