Si7366DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0055 at VGS = 10 V 20 0.009 at VGS = 4.5 V 16 • Halogen-free available • TrenchFET® Power MOSFET • Qg Optimized RoHS COMPLIANT APPLICATIONS • Synchronous Rectifier for DC/DC PowerPAK® SO-8 S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 D D 8 D 7 D 6 D G 5 Bottom View S Ordering Information: Si7366DP-T1-E3 (Lead (Pb)-free) Si7366DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C IDM IS Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 70 °C Maximum Power Dissipationa ID PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c 10 s 20 17 4.1 5 3.2 Steady State 20 ± 20 13 10 50 1.4 1.7 1.1 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol a t ≤ 10 s Steady State Steady State RthJA Typical 20 53 3.4 Maximum 25 70 4.5 Unit °C/W RthJC Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1” x 1” FR4 board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. . Document Number: 72296 S-80440-Rev. C, 03-Mar-08 www.vishay.com 1 Si7366DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a V nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 10 V RDS(on) 3.0 ± 100 µA 30 A VGS = 10 V, ID = 20 A 0.0045 0.0055 VGS = 4.5 V, ID = 16 A 0.0072 0.009 gfs VDS = 6 V, ID = 20 A 48 VSD IS = 4.5 A, VGS = 0 V 0.76 1.1 16 25 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 5.2 Gate Resistance Rg 1.8 VDS = 10 V, VGS = 4.5 V, ID = 20 A td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 6 Ω 21 32 VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 16 25 58 90 15 23 IF = 4.1 A, di/dt = 100 A/µs 40 80 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 60 VGS = 10 thru 4 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 40 30 20 TC = 125 °C 3V 10 10 25 °C - 55 °C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72296 S-80440-Rev. C, 03-Mar-08 Si7366DP Vishay Siliconix 25 °C, unless otherwise noted 0.015 3000 0.012 2400 0.009 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS VGS = 4.5 V 0.006 VGS = 10 V Ciss 1800 1200 Coss Crss 600 0.003 0 0.000 0 10 20 30 40 0 50 4 8 20 Capacitance 1.6 6 VDS = 10 V ID = 20 A 5 VGS = 10 V ID = 20 A R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 16 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) On-Resistance vs. Drain Current 4 3 2 1.4 1.2 1.0 1 0 0 3 6 9 12 15 18 0.8 - 50 21 - 25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.030 R DS(on) - On-Resistance (Ω) 60 TJ = 150 °C 10 TJ = 25 °C 1 0.00 25 TJ - Junction Temperature (°C) Gate Charge I S - Source Current (A) 12 0.024 0.018 ID = 20 A 0.012 0.006 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72296 S-80440-Rev. C, 03-Mar-08 10 www.vishay.com 3 Si7366DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 200 0.2 160 0.0 Power (W) VGS(th) Variance (V) ID = 250 µA - 0.2 120 80 - 0.4 40 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) 1 10 Time (s) Single Pulse Power Threshold Voltage 100 Limited by R DS(on)* 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 TC = 25 °C Single Pulse DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 53°C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72296 S-80440-Rev. C, 03-Mar-08 Si7366DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72296. Document Number: 72296 S-80440-Rev. C, 03-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1