SLD114VS Index-Guided AlGaAs Laser Diode For the availability of this product, please contact the sales office. Description The SLD114VS is an index-guided AlGaAs laser diode with the excellent droop characteristics. M-260 Features • Low droop • Small astigmatism • Small package (φ5.6mm) Applications Laser beam printers Structure • AlGaAs double hetero structured laser diode • PIN photodiode for optical power output monitor Recommended Operating Optical Power Output Absolute Maximum Ratings (Tc = 25°C) • Optical power output PO • Reverse voltage VR LD PD • Operating temperature Topr • Storage temperature Tstg Connection Diagram 3mW 5 2 15 –10 to +60 –40 to +85 mW V V °C °C Pin Configuration COMMON 3 PD 2 LD 2 1 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E94Y21-PP SLD114VS Optical and Electrical Characteristics (Tc = 25°C) Item Symbol Tc: Case temperature Conditions Min. Typ. Max. Unit 10 25 45 mA Threshold current Ith Operating current Iop PO = 3mW 20 40 60 mA Operating voltage Vop PO = 3mW — 1.9 2.5 V Wavelength λ PO = 3mW 760 780 800 nm 20 30 45 degree 6 10 15 degree — — ±80 µm — — ±3 degree — — ±2 degree Radiation angle Positional accuracy Perpendicular θ⊥ Parallel θ// Position ∆X, ∆Y, ∆Z Angle ∆φ⊥ PO = 3mW PO = 3mW ∆φ// Differential efficiency ηD PO = 3mW 0.1 0.25 0.5 mW/mA Astigmatism As PO = 3mW — 5 15 µm Monitor current Im PO = 3mW, Vr = 5V 0.3 0.5 1.2 mA Droop ∆P PO = 3mW — — 10 % –2– SLD114VS Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics Far field pattern (FFP) 7 Tc = 10°C 40°C 25°C Tc = 10°C Po = 3mW, Tc = 25°C 50°C 60°C 5 Relative radiant intensity Po – Optical power output [mW] 6 60°C 4 3 2 θ⊥ θ// 1 0 0 10 20 30 40 50 60 IF – Forward current [mA] 0 0.5 1.0 1.5 2.0 –40 –30 –20 2.5 –10 0 10 20 30 40 Angle [degree] Imon – Monitor current [mA] Monitor current vs. Temperature characteristics 1.0 80 0.8 60 0.6 Im – Monitor current [mA] Ith – Threshold current [mA] Threshold current vs. Temperature characteristics 100 40 20 10 –20 0 20 40 60 0.4 0.2 0.1 –20 80 Tc – Case Temperature [°C] Po = 3mW 0 20 40 Tc – Case Temperature [°C] –3– 60 80 SLD114VS Temperature dependence of spectrum AAA Tc = 60°C Po = 3mW AA AA Relative radiant intensity Tc = 40°C AAA AAA Tc = 25°C AAA AAA Tc = 10°C 775 780 785 λ – Wavelength [nm] –4– 790 795 SLD114VS Power output dependence of spectrum Po = 5mW Tc = 25°C Relative radiant intensity Po = 3mW Po = 2mW 770 775 780 λ – Wavelength [nm] –5– 785 790 SLD114VS Package Outline Unit: mm M-260 Reference Slot 0.4 1.0 0.5 90° 3 2 1 0 φ5.6 – 0.05 φ4.4 MAX 0.25 ∗1.26 φ3.7 MAX 1.2 ± 0.1 Reference Plane 2.6 MAX 0.5 MIN 1 6.5 2 3 LD Chip & Photo Diode 3 – φ0.45 ∗Optical Distance = 1.35 ± 0.15 SONY CODE PCD φ2.0 M-260 EIAJ CODE JEDEC CODE PACKAGE WEIGHT –6– 0.3g